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    SURFACE TREATMENT AGENT AND SURFACE-TREATED BODY MANUFACTURING METHOD
    3.
    发明申请
    SURFACE TREATMENT AGENT AND SURFACE-TREATED BODY MANUFACTURING METHOD 有权

    公开(公告)号：US20210090881A1

    公开(公告)日：2021-03-25

    申请号：US16772024

    申请日：2018-12-14

    申请人： CENTRAL GLASS COMPANY, LIMITED

    发明人： Yuki FUKUI ,  Yuzo OKUMURA ,  Yoshiharu TERUI ,  Soichi KUMON

    IPC分类号： H01L21/02 ,  C09D5/00 ,  B08B3/08

    摘要： According to the present disclosure, there are provided a surface treatment agent having the advantage that the raw material components can be dissolved in a short time during preparation of the surface treatment agent and capable of exerting a good water repellency imparting effect, and a method of manufacturing a surface-treated body with the use of the surface treatment agent. The surface treatment agent according to the present disclosure includes the following components: (I) at least one kind selected from the group consisting of silicon compounds represented by the following general formulas [1], [2] and [3]; (II) at least one kind selected from the group consisting of a nitrogen-containing heterocyclic compound represented by the following general formula [4], a nitrogen-containing heterocyclic compound represented by the following general formula [5], and imidazole; and (III) an organic solvent.

    SURFACE TREATMENT METHOD FOR SEMICONDUCTOR SUBSTRATES AND SURFACE TREATMENT AGENT COMPOSITION
    5.
    发明公开
    SURFACE TREATMENT METHOD FOR SEMICONDUCTOR SUBSTRATES AND SURFACE TREATMENT AGENT COMPOSITION 审中-公开

    公开(公告)号：US20230282473A1

    公开(公告)日：2023-09-07

    申请号：US17999361

    申请日：2021-05-19

    申请人： CENTRAL GLASS COMPANY, LIMITED

    发明人： Yuzo OKUMURA ,  Yuki FUKUI ,  Saori SHIOTA ,  Yoshiharu TERUI ,  Soichi KUMON

    IPC分类号： H01L21/02 ,  C09D183/08 ,  C09D7/20

    CPC分类号： H01L21/0206 ,  C09D183/08 ,  C09D7/20

    摘要： A surface treatment method for a semiconductor substrate of the present invention is a treatment method of treating a main surface of a semiconductor substrate that has, on the main surface of the substrate, a pattern formation region in which a pattern having a concave-convex structure with a pattern dimension of 30 nm or less is formed and a pattern non-formation region in which no pattern is formed, the method including a surface treatment step of bringing a surface treatment agent composition including a silylating agent into contact with the pattern formation region and the pattern non-formation region on the main surface of the semiconductor substrate, in which, with respect to a surface of the pattern non-formation region after the surface treatment step, an IPA contact angle with 2-propanol is 2° or more at a room temperature of 25° C. and/or a water contact angle with pure water is 50° or more at the room temperature of 25° C.

    Chemical Liquid for Forming Water Repellent Protective Film
    6.
    发明申请
    Chemical Liquid for Forming Water Repellent Protective Film 审中-公开

    公开(公告)号：US20190341246A1

    公开(公告)日：2019-11-07

    申请号：US16479330

    申请日：2018-01-15

    申请人： Central Glass Company, Limited

    发明人： Yuzo OKUMURA ,  Yuki FUKUI ,  Hiroki FUKAZAWA ,  Soichi KUMON

    IPC分类号： H01L21/02 ,  C09D7/62 ,  C09D7/20 ,  C09D127/06

    摘要： According to the present invention, there is provided a water-repellent protective film-forming chemical liquid containing: a first solvent being at least one kind selected from the group consisting of an ether solvent and a hydrocarbon solvent; a second solvent being a glycol ether; a silylation agent represented by the following general formula [1]; and a base represented by the following general formula [2] and/or the following general formula [3], wherein the concentration of the second solvent in the chemical liquid is 1 to 30 mass %, wherein the concentration of the silylation agent in the chemical liquid is 2 to 15 mass %, wherein the concentration of the base in the chemical liquid is 0.05 to 2 mass %, and wherein the mass ratio of the silylation agent to the base is 4.5 or greater. (R1)a(H)bSi(OCOR2)4-a-b  [1] (R3)c(H)dSi(X)4-c-d  [2] [(R4)e(H)fSi]2NH  [3]

    Method for Cleaning Wafer, and Chemical Used in Such Cleaning Method
    10.
    发明申请
    Method for Cleaning Wafer, and Chemical Used in Such Cleaning Method 审中-公开

    公开(公告)号：US20170287705A1

    公开(公告)日：2017-10-05

    申请号：US15512350

    申请日：2015-09-11

    申请人： Central Glass Company, Limited

    发明人： Takashi SAIO ,  Yuzo OKUMURA ,  Yuki FUKUI ,  Soichi KUMON

    IPC分类号： H01L21/02 ,  C07C309/03 ,  C07F7/08

    CPC分类号： H01L21/02087 ,  C07C309/03 ,  C07F7/081 ,  H01L21/02057 ,  H01L21/0209 ,  H01L21/31138

    摘要： Provided herein is a method for cleaning a wafer having a fine uneven surface pattern that at least partially contains a silicon element using a wafer cleaning device that includes a vinyl chloride resin as a liquid contacting member, the method including retaining a water-repellent protective film-forming chemical in at least a recessed portion of the uneven pattern to form a water-repellent protective film on a surface of the recessed portion, the water-repellent protective film-forming chemical containing: a monoalkoxysilane represented by the following general formula [1], (R1)aSi(H)3-a(OR2)  [1]; a sulfonic acid represented by the following general formula [2], R3—S(═O)2OH  [2]; and a diluting solvent, wherein the diluting solvent contains 80 to 100 mass % of alcohol with respect to the total 100 mass % of the diluting solvent.