公开(公告)号：US08514027B2

公开(公告)日：2013-08-20

申请号：US13306146

申请日：2011-11-29

申请人： Chan Wook Baik ,  Jong Seok Kim ,  Seong Chan Jun ,  Sun Il Kim ,  Jong Min Kim ,  Chan Bong Jun ,  Sang Hun Lee

发明人： Chan Wook Baik ,  Jong Seok Kim ,  Seong Chan Jun ,  Sun Il Kim ,  Jong Min Kim ,  Chan Bong Jun ,  Sang Hun Lee

IPC分类号： H03B5/30 ,  B44C1/22

CPC分类号： H01P11/003 ,  Y10T428/24802

摘要： A method of multi-stage substrate etching and a terahertz oscillator manufactured by using the method are provided. The method comprises the steps of forming a first mask pattern on any one surface of a first substrate, forming a hole by etching the first substrate using the first mask pattern as an etching mask, bonding, to the first substrate, a second substrate having the same thickness as a depth to be etched, forming a second mask pattern on the second substrate bonded, forming a hole by etching the second substrate using the second mask pattern as an etching mask, and removing an oxide layer having the etching selectivity between the first substrate and the second substrate.

摘要翻译： 提供了一种多级衬底蚀刻的方法和使用该方法制造的太赫兹振荡器。 该方法包括以下步骤：在第一衬底的任何一个表面上形成第一掩模图案，通过使用第一掩模图案作为蚀刻掩模将第一衬底蚀刻形成孔，将第一衬底粘合到第一衬底上， 与要蚀刻的深度相同的厚度，在第二衬底上形成第二掩模图案，通过使用第二掩模图案作为蚀刻掩模蚀刻第二衬底形成孔，并且去除在第一衬底之间具有蚀刻选择性的氧化物层 基板和第二基板。

公开(公告)号：US08092702B2

公开(公告)日：2012-01-10

申请号：US12025186

申请日：2008-02-04

申请人： Chan Wook Baik ,  Jong Seok Kim ,  Seong Chan Jun ,  Sun Il Kim ,  Jong Min Kim ,  Chan Bong Jun ,  Sang Hun Lee

发明人： Chan Wook Baik ,  Jong Seok Kim ,  Seong Chan Jun ,  Sun Il Kim ,  Jong Min Kim ,  Chan Bong Jun ,  Sang Hun Lee

IPC分类号： B44C1/22

CPC分类号： H01P11/003 ,  Y10T428/24802

摘要： A method of multi-stage substrate etching and a terahertz oscillator manufactured by using the method are provided. The method comprises the steps of forming a first mask pattern on any one surface of a first substrate, forming a hole by etching the first substrate using the first mask pattern as an etching mask, bonding, to the first substrate, a second substrate having the same thickness as a depth to be etched, forming a second mask pattern on the second substrate bonded, forming a hole by etching the second substrate using the second mask pattern as an etching mask, and removing an oxide layer having the etching selectivity between the first substrate and the second substrate, whereby the etched bottom is made uniformly even in a deep step, the edge curvature is minimized, and a T-shape is prevented from being formed on the etched wall face to thereby improve the etching quality. Further, the etching depth is previously controlled by lapping or polishing, the upper and lower substrates are precisely boned to each other using the alignment key, and a multi-layer processing is possibly performed thereto, so that the precision and the uniformity in structure of the oscillator or amplifier is obtained.

摘要翻译： 提供了一种多级衬底蚀刻的方法和使用该方法制造的太赫兹振荡器。 该方法包括以下步骤：在第一衬底的任何一个表面上形成第一掩模图案，通过使用第一掩模图案作为蚀刻掩模将第一衬底蚀刻形成孔，将第一衬底粘合到第一衬底上， 与要蚀刻的深度相同的厚度，在第二衬底上形成第二掩模图案，通过使用第二掩模图案作为蚀刻掩模蚀刻第二衬底形成孔，并且去除在第一衬底之间具有蚀刻选择性的氧化物层 衬底和第二衬底，由此蚀刻的底部均匀地均匀地制成，即使在深度阶段，边缘曲率最小化，并且防止在蚀刻的壁面上形成T形，从而提高蚀刻质量。 此外，通过研磨或研磨预先控制蚀刻深度，使用对准键将上下基板彼此精确地相互结合，并且可以对其进行多层处理，使得精度和结构的均匀性 获得振荡器或放大器。