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    Method of aging field emission devices
    1.
    发明授权
    Method of aging field emission devices 有权
    老化场发射装置的方法

    公开(公告)号：US07727039B2

    公开(公告)日：2010-06-01

    申请号：US11806658

    申请日：2007-06-01

    申请人： Chan-wook Baik ,  Sun-il Kim ,  Deuk-seok Chung ,  Byong-gwon Song ,  Min-jong Bae

    发明人： Chan-wook Baik ,  Sun-il Kim ,  Deuk-seok Chung ,  Byong-gwon Song ,  Min-jong Bae

    IPC分类号： H01J9/00 ,  G09G3/00

    CPC分类号： H01J9/42 ,  H01J29/04 ,  H01J31/127

    摘要： A method of aging a field emission device including a cathode and an anode arranged parallel to each other, an emitter arranged on the cathode to emit electrons to the anode, and a gate electrode arranged on the cathode adjacent to the emitter, the method including: supplying a voltage to the cathode; supplying a voltage to the gate; and then supplying a sufficiently low voltage to the anode so as to prevent a short-circuited portion between the cathode and the gate electrode from being permanently damaged due to an overcurrent.

    摘要翻译： 一种老化场致发射器件的方法，该场致发射器件包括彼此平行布置的阴极和阳极，布置在阴极上以向阳极发射电子的发射极和布置在阴极上与发射极相邻的栅极，该方法包括： 向阴极供电; 向门提供电压; 然后向阳极提供足够低的电压，以防止阴极和栅电极之间的短路部分由于过电流而永久损坏。

    Method of aging field emission devices
    2.
    发明申请
    Method of aging field emission devices 有权
    老化场发射装置的方法

    公开(公告)号：US20080119104A1

    公开(公告)日：2008-05-22

    申请号：US11806658

    申请日：2007-06-01

    申请人： Chan-wook Baik ,  Sun-il Kim ,  Deuk-seok Chung ,  Byong-gwon Song ,  Min-jong Bae

    发明人： Chan-wook Baik ,  Sun-il Kim ,  Deuk-seok Chung ,  Byong-gwon Song ,  Min-jong Bae

    IPC分类号： H01J9/12

    CPC分类号： H01J9/42 ,  H01J29/04 ,  H01J31/127

    摘要： A method of aging a field emission device including a cathode and an anode arranged parallel to each other, an emitter arranged on the cathode to emit electrons to the anode, and a gate electrode arranged on the cathode adjacent to the emitter, the method including: supplying a voltage to the cathode; supplying a voltage to the gate; and then supplying a sufficiently low voltage to the anode so as to prevent a short-circuited portion between the cathode and the gate electrode from being permanently damaged due to an overcurrent.

    摘要翻译： 一种老化场致发射器件的方法，该场致发射器件包括彼此平行布置的阴极和阳极，布置在阴极上以向阳极发射电子的发射极和布置在阴极上与发射极相邻的栅极，该方法包括： 向阴极供电; 向门提供电压; 然后向阳极提供足够低的电压，以防止阴极和栅电极之间的短路部分由于过电流而永久损坏。

    Method of fabricating field emission array type light emitting unit
    3.
    发明授权
    Method of fabricating field emission array type light emitting unit 有权
    场致发射阵列型发光单元的制造方法

    公开(公告)号：US07851231B2

    公开(公告)日：2010-12-14

    申请号：US11907942

    申请日：2007-10-18

    申请人： Sun-il Kim ,  Jun-hee Choi ,  Byong-gwon Song ,  Shang-hyeun Park ,  Ho-suk Kang ,  Deuk-seok Chung ,  Chan-wook Baik

    发明人： Sun-il Kim ,  Jun-hee Choi ,  Byong-gwon Song ,  Shang-hyeun Park ,  Ho-suk Kang ,  Deuk-seok Chung ,  Chan-wook Baik

    IPC分类号： H01L21/00

    CPC分类号： H01J63/02 ,  G02F2001/133625 ,  H01J9/247

    摘要： A method of fabricating a field emission array type light emitting unit that includes a rear substrate including a plurality of cathodes and a plurality of carbon nanotube emitters on a front side, a front substrate including a plurality of anodes and a phosphor layer on a rear side, wherein the rear substrate and the front substrate are arranged at a distance apart from each other and a plurality of spacers are arranged between the rear substrate and the front substrate, the plurality of spacers being adapted to maintain constant the distance, the method includes producing a diffusion pattern by wet etching a front side of the front substrate.

    摘要翻译： 一种制造场发射阵列型发光单元的方法，该发光阵列型发光单元包括：前表面上包括多个阴极和多个碳纳米管发射体的后基板，包括多个阳极的前基板和背面的荧光体层 其特征在于，所述后基板和所述前基板被配置成彼此间隔开，并且在所述后基板与所述前基板之间配置有多个间隔件，所述多个间隔件适于保持距离恒定，所述方法包括： 通过湿法蚀刻前基板的前侧的扩散图案。

    Method of fabricating field emission array type light emitting unit
    4.
    发明申请
    Method of fabricating field emission array type light emitting unit 有权
    场致发射阵列型发光单元的制造方法

    公开(公告)号：US20080102547A1

    公开(公告)日：2008-05-01

    申请号：US11907942

    申请日：2007-10-18

    申请人： Sun-il Kim ,  Jun-hee Choi ,  Byong-gwon Song ,  Shang-hyeun Park ,  Ho-suk Kang ,  Deuk-seok Chung ,  Chan-wook Baik

    发明人： Sun-il Kim ,  Jun-hee Choi ,  Byong-gwon Song ,  Shang-hyeun Park ,  Ho-suk Kang ,  Deuk-seok Chung ,  Chan-wook Baik

    IPC分类号： H01L33/00

    CPC分类号： H01J63/02 ,  G02F2001/133625 ,  H01J9/247

    摘要： A method of fabricating a field emission array type light emitting unit that includes a rear substrate including a plurality of cathodes and a plurality of carbon nanotube emitters on a front side, a front substrate including a plurality of anodes and a phosphor layer on a rear side, wherein the rear substrate and the front substrate are arranged at a distance apart from each other and a plurality of spacers are arranged between the rear substrate and the front substrate, the plurality of spacers being adapted to maintain constant the distance, the method includes producing a diffusion pattern by wet etching a front side of the front substrate.

    摘要翻译： 一种制造场发射阵列型发光单元的方法，该发光阵列型发光单元包括：前表面上包括多个阴极和多个碳纳米管发射体的后基板，包括多个阳极的前基板和背面的荧光体层 其特征在于，所述后基板和所述前基板被配置成彼此间隔开，并且在所述后基板与所述前基板之间配置有多个间隔件，所述多个间隔件适于保持距离恒定，所述方法包括： 通过湿法蚀刻前基板的前侧的扩散图案。

    Field emission device and its method of manufacture
    6.
    发明申请
    Field emission device and its method of manufacture 有权
    场发射装置及其制造方法

    公开(公告)号：US20080111464A1

    公开(公告)日：2008-05-15

    申请号：US11798612

    申请日：2007-05-15

    申请人： Deuk-seok Chung ,  Yong-chul Kim ,  Yong-wan Jin ,  Sun-il Kim ,  Ho-suk Kang ,  Chan-wook Baik

    发明人： Deuk-seok Chung ,  Yong-chul Kim ,  Yong-wan Jin ,  Sun-il Kim ,  Ho-suk Kang ,  Chan-wook Baik

    IPC分类号： H01J3/02 ,  H01J9/00

    CPC分类号： H01J29/04 ,  H01J31/127 ,  H01J2201/30469

    摘要： A field emission device and its method of manufacture includes: a substrate; a plurality of cathode electrodes formed on the substrate and having slot shaped cathode holes to expose the substrate; emitters formed on the substrate exposed through each of the cathode holes and separated from both side surfaces of the cathode holes, the emitters being formed along a lengthwise direction of the cathode holes; an insulating layer formed on the substrate to cover the cathode electrodes and having insulating layer holes communicating with the cathode holes; and a plurality of gate electrodes formed on the insulating layer and having gate holes communicating with the insulating layer holes.

    摘要翻译： 场致发射器件及其制造方法包括：衬底; 多个阴极电极，形成在基板上，并具有用于露出基板的狭槽形阴极孔; 所述发光体形成在所述基板上，通过所述阴极孔露出并从所述阴极孔的两侧面分离，所述发射体沿着所述阴极孔的长度方向形成; 绝缘层，形成在所述基板上以覆盖所述阴极并具有与所述阴极孔连通的绝缘层孔; 以及形成在绝缘层上并具有与绝缘层孔连通的栅极孔的多个栅电极。

    Field emission device and its method of manufacture
    8.
    发明授权
    Field emission device and its method of manufacture 有权
    场发射装置及其制造方法

    公开(公告)号：US07755273B2

    公开(公告)日：2010-07-13

    申请号：US11798612

    申请日：2007-05-15

    申请人： Deuk-seok Chung ,  Yong-chul Kim ,  Yong-wan Jin ,  Sun-il Kim ,  Ho-suk Kang ,  Chan-wook Baik

    发明人： Deuk-seok Chung ,  Yong-chul Kim ,  Yong-wan Jin ,  Sun-il Kim ,  Ho-suk Kang ,  Chan-wook Baik

    IPC分类号： H01J1/62

    CPC分类号： H01J29/04 ,  H01J31/127 ,  H01J2201/30469

    摘要： A field emission device and its method of manufacture includes: a substrate; a plurality of cathode electrodes formed on the substrate and having slot shaped cathode holes to expose the substrate; emitters formed on the substrate exposed through each of the cathode holes and separated from both side surfaces of the cathode holes, the emitters being formed along a lengthwise direction of the cathode holes; an insulating layer formed on the substrate to cover the cathode electrodes and having insulating layer holes communicating with the cathode holes; and a plurality of gate electrodes formed on the insulating layer and having gate holes communicating with the insulating layer holes.

    摘要翻译： 场致发射器件及其制造方法包括：衬底; 多个阴极电极，形成在基板上，并具有用于露出基板的狭槽形阴极孔; 所述发光体形成在所述基板上，通过所述阴极孔露出并从所述阴极孔的两侧面分离，所述发射体沿着所述阴极孔的长度方向形成; 绝缘层，形成在所述基板上以覆盖所述阴极并具有与所述阴极孔连通的绝缘层孔; 以及形成在绝缘层上并具有与绝缘层孔连通的栅极孔的多个栅电极。

    Electron multiplier electrode and terahertz radiation source using the same
    9.
    发明授权
    Electron multiplier electrode and terahertz radiation source using the same 有权
    电子倍增器电极和太赫兹辐射源使用相同

    公开(公告)号：US07768181B2

    公开(公告)日：2010-08-03

    申请号：US12007186

    申请日：2008-01-08

    申请人： Chan-wook Baik ,  Yong-wan Jin ,  Sun-il Kim ,  Min-jong Bae

    发明人： Chan-wook Baik ,  Yong-wan Jin ,  Sun-il Kim ,  Min-jong Bae

    IPC分类号： H01J1/62

    CPC分类号： H01J43/04

    摘要： Provided are an electron multiplier electrode using a secondary electron extraction electrode and a terahertz radiation source using the electron multiplier electrode. The electron multiplier electrode includes: a cathode; an emitter disposed on the cathode and extracting electron beams; a gate electrode for switching the electron beams, the gate electrode being disposed on the cathode to surround the emitter; and a secondary electron extraction electrode disposed on the gate electrode and including a secondary electron extraction layer extracting secondary electrons due to collision of the electron beams.

    摘要翻译： 提供了使用二次电子提取电极和使用电子倍增器电极的太赫兹辐射源的电子倍增器电极。 电子倍增器电极包括：阴极; 设置在阴极上并提取电子束的发射器; 用于切换电子束的栅电极，栅电极设置在阴极上以围绕发射极; 以及二次电子提取电极，设置在栅电极上，并且包括由于电子束的碰撞而提取二次电子的二次电子提取层。

    Electron multiplier electrode and terahertz radiation source using the same
    10.
    发明申请
    Electron multiplier electrode and terahertz radiation source using the same 有权
    电子倍增器电极和太赫兹辐射源使用相同

    公开(公告)号：US20080164798A1

    公开(公告)日：2008-07-10

    申请号：US12007186

    申请日：2008-01-08

    申请人： Chan-wook Baik ,  Yong-wan Jin ,  Sun-il Kim ,  Min-jong Bae

    发明人： Chan-wook Baik ,  Yong-wan Jin ,  Sun-il Kim ,  Min-jong Bae

    IPC分类号： H01J43/04 ,  G21G4/00

    CPC分类号： H01J43/04

    摘要： Provided are an electron multiplier electrode using a secondary electron extraction electrode and a terahertz radiation source using the electron multiplier electrode. The electron multiplier electrode includes: a cathode; an emitter disposed on the cathode and extracting electron beams; a gate electrode for switching the electron beams, the gate electrode being disposed on the cathode to surround the emitter; and a secondary electron extraction electrode disposed on the gate electrode and including a secondary electron extraction layer extracting secondary electrons due to collision of the electron beams.

    摘要翻译： 提供了使用二次电子提取电极和使用电子倍增器电极的太赫兹辐射源的电子倍增器电极。 电子倍增器电极包括：阴极; 设置在阴极上并提取电子束的发射器; 用于切换电子束的栅电极，栅电极设置在阴极上以围绕发射极; 以及二次电子提取电极，设置在栅电极上，并且包括由于电子束的碰撞而提取二次电子的二次电子提取层。