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25 条记录 (耗时 0.041 秒)

    Sensing device
    1.
    发明授权
    Sensing device 有权
    感应装置

    公开(公告)号：US08426900B2

    公开(公告)日：2013-04-23

    申请号：US13122273

    申请日：2009-05-27

    申请人： Chang Geun Ahn ,  Chan Woo Park ,  Jong Heon Yang ,  In Bok Baek ,  Chil Seong Ah ,  An Soon Kim ,  Tae Youb Kim ,  Gun Yong Sung

    发明人： Chang Geun Ahn ,  Chan Woo Park ,  Jong Heon Yang ,  In Bok Baek ,  Chil Seong Ah ,  An Soon Kim ,  Tae Youb Kim ,  Gun Yong Sung

    IPC分类号： G01N27/403

    CPC分类号： G01N27/4145 ,  G01N27/4146

    摘要： Provided is a sensing device, which includes a reactive material layer (260) responding to a specific functional group in a fluid, a sensing capacitor (B) including first and second electrodes disposed on and under an insulating layer (230), the first electrode being disposed under the reactive material layer (260), and a field effect transistor including a gate electrode connected with the first electrode of the sensing capacitor. Here, the reactive material layer (260) is formed in a conductive three-dimensional structure to widen a surface area. Thus, the sensing device may have high sensitivity by maximizing a capacitor sharing effect and a change in voltage amount applied to a gate, which may be caused by widening a surface area of the conductive three-dimensional structure with respect to the fluid flow.

    摘要翻译： 提供了一种感测装置，其包括响应于流体中的特定官能团的反应性材料层（260），包括设置在绝缘层（230）上和下方的第一和第二电极的感测电容器（B），第一电极 设置在反应性材料层（260）下方的场效应晶体管，以及包括与感测电容器的第一电极连接的栅电极的场效应晶体管。 这里，反应性材料层（260）形成为导电三维结构以扩大表面积。 因此，感测装置可以通过最大化电容器共享效应和施加到栅极的电压量的变化而具有高灵敏度，这可能是通过相对于流体流动扩大导电三维结构的表面积而引起的。

    SENSING DEVICE
    2.
    发明申请
    SENSING DEVICE 有权
    感应装置

    公开(公告)号：US20110180856A1

    公开(公告)日：2011-07-28

    申请号：US13122273

    申请日：2009-05-27

    申请人： Chang Geun Ahn ,  Chan Woo Park ,  Jong Heon Yang ,  In Bok Baek ,  Chil Seong Ah ,  An Soon Kim ,  Tae Youb Kim ,  Gun Yong Sung

    发明人： Chang Geun Ahn ,  Chan Woo Park ,  Jong Heon Yang ,  In Bok Baek ,  Chil Seong Ah ,  An Soon Kim ,  Tae Youb Kim ,  Gun Yong Sung

    IPC分类号： G01N27/403 ,  H01L29/772 ,  B82Y15/00

    CPC分类号： G01N27/4145 ,  G01N27/4146

    摘要： Provided is a sensing device, which includes a reactive material layer (260) responding to a specific functional group in a fluid, a sensing capacitor (B) including first and second electrodes disposed on and under an insulating layer (230), the first electrode being disposed under the reactive material layer (260), and a field effect transistor including a gate electrode connected with the first electrode of the sensing capacitor. Here, the reactive material layer (260) is formed in a conductive three-dimensional structure to widen a surface area. Thus, the sensing device may have high sensitivity by maximizing a capacitor sharing effect and a change in voltage amount applied to a gate, which may be caused by widening a surface area of the conductive three-dimensional structure with respect to the fluid flow.

    摘要翻译： 提供了一种感测装置，其包括响应于流体中的特定官能团的反应性材料层（260），包括设置在绝缘层（230）上和下方的第一和第二电极的感测电容器（B），第一电极 设置在反应性材料层（260）下方的场效应晶体管，以及包括与感测电容器的第一电极连接的栅电极的场效应晶体管。 这里，反应性材料层（260）形成为导电三维结构以扩大表面积。 因此，感测装置可以通过最大化电容器共享效应和施加到栅极的电压量的变化而具有高灵敏度，这可能是通过相对于流体流动扩大导电三维结构的表面积而引起的。

    Semiconductor nanowire sensor device and method for manufacturing the same
    5.
    发明授权
    Semiconductor nanowire sensor device and method for manufacturing the same 有权
    半导体纳米线传感器装置及其制造方法

    公开(公告)号：US08241939B2

    公开(公告)日：2012-08-14

    申请号：US12682571

    申请日：2008-07-24

    申请人： Chan Woo Park ,  Chang Geun Ahn ,  Jong Heon Yang ,  In Bok Baek ,  Chil Seong Ah ,  Han Young Yu ,  An Soon Kim ,  Tae Youb Kim ,  Moon Gyu Jang ,  Myung Sim Jun

    发明人： Chan Woo Park ,  Chang Geun Ahn ,  Jong Heon Yang ,  In Bok Baek ,  Chil Seong Ah ,  Han Young Yu ,  An Soon Kim ,  Tae Youb Kim ,  Moon Gyu Jang ,  Myung Sim Jun

    IPC分类号： H01L21/00 ,  H01L29/06

    CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y15/00 ,  H01L29/0673 ,  H01L29/78696

    摘要： A method for manufacturing a biosensor includes forming a silicon nanowire channel, etching a first conductivity-type single crystalline silicon layer which is a top layer of a Silicon-On-Insulator (SOI) substrate to form a first conductivity-type single crystalline silicon line pattern, doping both sidewalls of the first conductivity-type single crystalline silicon line pattern with impurities of a second conductivity-type opposite to the first conductivity-type to form a second conductivity-type channel, forming second conductivity-type pads for forming electrodes at both ends of the first conductivity-type single crystalline silicon line pattern, forming, in an undoped region of the first conductivity-type single crystalline silicon line pattern, a first electrode for applying a reverse-bias voltage to insulate the first conductivity-type single crystalline silicon line pattern and the second conductivity-type channel from each other, and forming second electrodes for applying a bias voltage across the second conductivity-type channel on the second conductivity-type pad.

    摘要翻译： 制造生物传感器的方法包括形成硅纳米线通道，蚀刻作为绝缘体上硅（SOI）衬底的顶层的第一导电型单晶硅层，以形成第一导电型单晶硅线 以与第一导电类型相反的第二导电类型的杂质掺杂第一导电型单晶硅线图案的两个侧壁以形成第二导电型沟道，形成第二导电型垫，用于在 第一导电型单晶硅线图案的两端，在第一导电型单晶硅线图案的未掺杂区域中形成用于施加反向偏置电压以使第一导电型单晶硅线型图案绝缘的第一电极 晶体硅线图案和第二导电型沟道，并且形成用于施加双面的第二电极 在第二导电型垫上的第二导电类型沟道上的电压。

    BIOSENSOR USING SILICON NANOWIRE AND METHOD OF MANUFACTURING THE SAME
    8.
    发明申请
    BIOSENSOR USING SILICON NANOWIRE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    使用硅纳米管的生物传感器及其制造方法

    公开(公告)号：US20090152598A1

    公开(公告)日：2009-06-18

    申请号：US12240114

    申请日：2008-09-29

    申请人： In Bok BAEK ,  Jong Heon Yang ,  Chang Geun Ahn ,  Han Young Yu ,  Chil Seong Ah ,  Chan Woo Park ,  An Soon Kim ,  Tae Youb Kim ,  Moon Gyu Jang ,  Myung Sim Jun

    发明人： In Bok BAEK ,  Jong Heon Yang ,  Chang Geun Ahn ,  Han Young Yu ,  Chil Seong Ah ,  Chan Woo Park ,  An Soon Kim ,  Tae Youb Kim ,  Moon Gyu Jang ,  Myung Sim Jun

    IPC分类号： H01L29/00 ,  H01L21/00

    CPC分类号： G01N27/4145 ,  G01N27/4146

    摘要： Provided are a biosensor using a silicon nanowire and a method of manufacturing the same. The silicon nanowire can be formed to have a shape, in which identical patterns are continuously repeated, to enlarge an area in which probe molecules are fixed to the silicon nanowire, thereby increasing detection sensitivity. In addition, the detection sensitivity can be easily adjusted by adjusting a gap between the identical patterns of the silicon nanowire depending on characteristics of target molecules, without adjusting a line width of the silicon nanowire in the conventional art. Further, the gap between the identical patterns of the silicon nanowire can be adjusted depending on characteristics of the target molecule to differentiate detection sensitivities, thereby simultaneously detecting various detection sensitivities.

    摘要翻译： 提供了使用硅纳米线的生物传感器及其制造方法。 可以将硅纳米线形成为具有连续重复相同图案的形状，以扩大探针分子固定在硅纳米线上的面积，从而提高检测灵敏度。 此外，通过根据目标分子的特性调整硅纳米线的相同图案之间的间隙，而不调整现有技术中的硅纳米线的线宽，可以容易地调整检测灵敏度。 此外，可以根据目标分子的特性来调整硅纳米线的相同图案之间的间隙，以区分检测灵敏度，从而同时检测各种检测灵敏度。

    Biosensor and method of driving the same
    10.
    发明授权
    Biosensor and method of driving the same 失效
    生物传感器及其驱动方法

    公开(公告)号：US08164123B2

    公开(公告)日：2012-04-24

    申请号：US12703939

    申请日：2010-02-11

    申请人： Chan Woo Park ,  Chang Geun Ahn ,  Chil Seong Ah ,  Tae Youb Kim ,  An Soon Kim ,  Jong Heon Yang ,  Gun Yong Sung

    发明人： Chan Woo Park ,  Chang Geun Ahn ,  Chil Seong Ah ,  Tae Youb Kim ,  An Soon Kim ,  Jong Heon Yang ,  Gun Yong Sung

    IPC分类号： H01L29/78 ,  H01L29/772

    CPC分类号： G01N27/4145

    摘要： Provided are a biosensor and a method of driving the same. The biosensor includes a transistor including a substrate including a source, a drain, and a channel formed between the source and the drain, a gate insulating layer formed on the channel, and a source electrode and a drain electrode respectively connected with the source and the drain, a fluid line for covering the transistor to have an inner space together with the transistor and in which a sample solution including target molecules flows, a reference electrode formed on an inner wall of the fluid line, and a probe molecule layer attached on the reference electrode and reacting with the target molecules. Accordingly, the reference electrode is formed on the inner wall of the fluid line, enabling miniaturization of the bio device. Also, the probe molecules are formed on the reference electrode to measure a change in threshold voltage according to a change in electric potential between the reference electrode and the gate insulating layer, such that the sensitivity and reaction rate can be remarkably improved.

    摘要翻译： 提供了一种生物传感器及其驱动方法。 生物传感器包括晶体管，其包括基板，该基板包括源极，漏极和形成在源极和漏极之间的沟道，形成在沟道上的栅极绝缘层以及分别与源极和漏极连接的源极和漏极 漏极，用于覆盖晶体管的流体线，其与晶体管一起具有内部空间，并且其中包含目标分子的样品溶液流动，形成在流体管线的内壁上的参考电极和附着在该流体管线上的探针分子层 参考电极并与靶分子反应。 因此，参考电极形成在流体管线的内壁上，使生物装置能够小型化。 此外，探针分子形成在参考电极上，以根据参考电极和栅极绝缘层之间的电位的变化来测量阈值电压的变化，从而可以显着提高灵敏度和反应速率。