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公开(公告)号：US08749069B2
公开(公告)日：2014-06-10
申请号：US13162836
申请日：2011-06-17
申请人： Tae-Wook Kang , Chang-Yong Jeong , Chang-Soo Kim , Chang-Su Seo , Moon-Hee Park
发明人： Tae-Wook Kang , Chang-Yong Jeong , Chang-Soo Kim , Chang-Su Seo , Moon-Hee Park
IPC分类号： H01L23/52
CPC分类号： H01L29/41733 , H01L21/76804 , H01L27/124 , H01L27/1248 , H01L29/66757
摘要： A semiconductor device and method of fabricating the same, which forms a contact hole, a via hole or a via contact hole with multiple profiles with various taper angles. The semiconductor device includes a substrate, a thin film transistor formed on the substrate and having a semiconductor layer, a gate insulating layer, a gate electrode, and an interlayer dielectric, and a contact hole penetrating the gate insulating layer and the interlayer dielectric and exposing a portion of the semiconductor layer. The contact hole has a multiple profile in which an upper portion of the contact hole has a wet etch profile and a lower portion of the contact hole has at least one of the wet etch profile and a dry etch profile.
摘要翻译： 一种半导体器件及其制造方法，其形成具有多个锥形角的多个型材的接触孔，通孔或通孔接触孔。 所述半导体器件包括衬底，形成在所述衬底上并具有半导体层，栅极绝缘层，栅极电极和层间电介质的薄膜晶体管，以及穿过所述栅极绝缘层和所述层间电介质的接触孔和暴露 半导体层的一部分。 接触孔具有多个轮廓，其中接触孔的上部具有湿蚀刻轮廓，并且接触孔的下部具有湿蚀刻轮廓和干蚀刻轮廓中的至少一个。
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公开(公告)号：US07335923B2
公开(公告)日：2008-02-26
申请号：US11138322
申请日：2005-05-27
申请人： Tae-Wook Kang , Chang-Su Seo , Moon-Hee Park , Ho-Jin Kang
发明人： Tae-Wook Kang , Chang-Su Seo , Moon-Hee Park , Ho-Jin Kang
IPC分类号： H01L29/04
CPC分类号： H01L27/3248 , H01L51/5218 , H01L2251/5315
摘要： An electroluminescence display device that includes a thin film transistor layer formed on a substrate, at least one insulating layer formed on the thin film transistor layer, and a pixel layer, disposed on the insulating layer and including a first electrode layer, a second electrode layer, and an intermediate layer having at least an emitting layer interposed between the first electrode layer and the second electrode layer. The pixel layer includes a reflection layer that contacts either a source or drain electrode of the thin film transistor layer and is disposed below the first electrode layer, and the reflection layer includes a through hole through which the first electrode layer contacts either the source electrode or the drain electrode.
摘要翻译： 一种电致发光显示装置，其包括形成在基板上的薄膜晶体管层，形成在所述薄膜晶体管层上的至少一个绝缘层和设置在所述绝缘层上的包括第一电极层的第二电极层 以及中间层，其至少具有插入在第一电极层和第二电极层之间的发光层。 像素层包括与薄膜晶体管层的源电极或漏电极接触并设置在第一电极层下方的反射层，反射层包括通孔，第一电极层通过该通孔与源电极或源电极接触， 漏电极。
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公开(公告)号：US07335912B2
公开(公告)日：2008-02-26
申请号：US11168931
申请日：2005-06-29
申请人： Moon-Hee Park , Chang-Su Seo , Tae-Wook Kang
发明人： Moon-Hee Park , Chang-Su Seo , Tae-Wook Kang
CPC分类号： H01L27/3248 , H01L51/5271
摘要： An organic light emitting display including a semiconductor layer formed on a substrate, a first insulating layer formed on the substrate and including a contact hole, an electrode formed on the first insulating layer and coupled to the semiconductor layer through the contact hole, a second insulating layer formed on the first insulating layer and including a via hole, and a pixel electrode formed on the second insulating layer and coupled to the electrode through the via hole. The via hole is formed corresponding to the contact hole, and the via hole has a larger size than the contact hole.
摘要翻译： 一种有机发光显示器，包括形成在基板上的半导体层，形成在基板上并包括接触孔的第一绝缘层，形成在第一绝缘层上并通过接触孔耦合到半导体层的电极，第二绝缘层 形成在第一绝缘层上并且包括通孔的层，以及形成在第二绝缘层上并通过通孔耦合到电极的像素电极。 通孔与接触孔对应地形成，并且通孔具有比接触孔更大的尺寸。
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公开(公告)号：US08183063B2
公开(公告)日：2012-05-22
申请号：US12506625
申请日：2009-07-21
申请人： Chang-Su Seo , Moon-Hee Park , Tae-Wook Kang , Hyun-Eok Shin , Sung-Sik Bae
发明人： Chang-Su Seo , Moon-Hee Park , Tae-Wook Kang , Hyun-Eok Shin , Sung-Sik Bae
IPC分类号： H01L21/00
CPC分类号： H01L27/3244 , H01L27/3246 , H01L51/5218 , H01L51/5271 , H01L2251/5315 , H01L2251/558
摘要： An organic light emitting device (OLED) and a method of fabricating the same are provided, wherein the OLED includes a thin film transistor having a gate electrode, and source and drain electrodes on a substrate; a triple-layered pixel electrode connected to one of the source and drain electrodes through a via-contact hole formed in an insulating layer on the substrate, and having a lower pixel electrode, a reflective layer pattern and an upper pixel electrode; an organic layer disposed on the upper pixel electrode and having at least an emission layer; and an opposite electrode disposed on the organic layer.
摘要翻译： 提供了一种有机发光器件（OLED）及其制造方法，其中OLED包括具有栅电极的薄膜晶体管，以及衬底上的源电极和漏电极; 三层像素电极，其通过形成在所述基板上的绝缘层中的通孔接触孔连接到所述源极和漏极之一，并且具有下部像素电极，反射层图案和上部像素电极; 设置在所述上像素电极上并具有至少发射层的有机层; 以及设置在有机层上的相对电极。
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公开(公告)号：US08168531B2
公开(公告)日：2012-05-01
申请号：US12434072
申请日：2009-05-01
申请人： Tae-Wook Kang , Chang-Yong Jeong , Chang-Soo Kim , Chang-Su Seo , Moon-Hee Park
发明人： Tae-Wook Kang , Chang-Yong Jeong , Chang-Soo Kim , Chang-Su Seo , Moon-Hee Park
IPC分类号： H01L21/4763
CPC分类号： H01L29/41733 , H01L21/76804 , H01L27/124 , H01L27/1248 , H01L29/66757
摘要： A semiconductor device and method of fabricating the same, which forms a contact hole, a via hole or a via contact hole with multiple profiles with various taper angles. The semiconductor device includes a substrate, a thin film transistor formed on the substrate and having a semiconductor layer, a gate insulating layer, a gate electrode, and an interlayer dielectric, and a contact hole penetrating the gate insulating layer and the interlayer dielectric and exposing a portion of the semiconductor layer. The contact hole has a multiple profile in which an upper portion of the contact hole has a wet etch profile and a lower portion of the contact hole has at least one of the wet etch profile and a dry etch profile.
摘要翻译： 一种半导体器件及其制造方法，其形成具有多个锥形角的多个型材的接触孔，通孔或通孔接触孔。 所述半导体器件包括衬底，形成在所述衬底上并具有半导体层，栅极绝缘层，栅极电极和层间电介质的薄膜晶体管，以及穿过所述栅极绝缘层和所述层间电介质的接触孔和暴露 半导体层的一部分。 接触孔具有多个轮廓，其中接触孔的上部具有湿蚀刻轮廓，并且接触孔的下部具有湿蚀刻轮廓和干蚀刻轮廓中的至少一个。
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公开(公告)号：US07579767B2
公开(公告)日：2009-08-25
申请号：US11138857
申请日：2005-05-27
申请人： Chang-Su Seo , Moon-Hee Park , Tae-Wook Kang , Hyun-Eok Shin , Sung-sik Bae
发明人： Chang-Su Seo , Moon-Hee Park , Tae-Wook Kang , Hyun-Eok Shin , Sung-sik Bae
CPC分类号： H01L27/3244 , H01L27/3246 , H01L51/5218 , H01L51/5271 , H01L2251/5315 , H01L2251/558
摘要： An organic light emitting device (OLED) and a method of fabricating the same are provided, wherein the OLED includes a thin film transistor having a gate electrode, and source and drain electrodes on a substrate; a triple-layered pixel electrode connected to one of the source and drain electrodes through a via-contact hole formed in an insulating layer on the substrate, and having a lower pixel electrode, a reflective layer pattern and an upper pixel electrode; an organic layer disposed on the upper pixel electrode and having at least an emission layer; and an opposite electrode disposed on the organic layer.
摘要翻译： 提供了一种有机发光器件（OLED）及其制造方法，其中OLED包括具有栅电极的薄膜晶体管，以及衬底上的源电极和漏电极; 三层像素电极，其通过形成在所述基板上的绝缘层中的通孔接触孔连接到所述源极和漏极之一，并且具有下部像素电极，反射层图案和上部像素电极; 设置在所述上像素电极上并具有至少发射层的有机层; 以及设置在有机层上的相对电极。
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7.发明授权Top-emission type organic electroluminescence display device and method for fabricating the same 有权顶发射型有机电致发光显示装置及其制造方法公开(公告)号：US07456566B2
公开(公告)日：2008-11-25
申请号：US11085113
申请日：2005-03-22
申请人： Chang-Su Seo , Moon-Hee Park
发明人： Chang-Su Seo , Moon-Hee Park
CPC分类号： H01L51/5271 , H01L27/1248 , H01L27/3244 , H01L29/458 , H01L2251/5315 , Y10S428/917
摘要： The present invention relates to a top-emission type organic electroluminescence display device, more particularly, to a top-emission type organic electroluminescence display device comprising double passivation layers of an inorganic insulation layer and an organic planarization layer formed on an upper part of a thin film transistor comprising a semiconductor layer, gate electrode and source/drain electrodes on a substrate; a reflection layer formed between the double passivation layers; and a first electrode layer formed of a transparent material and formed on a reflection layer. Furthermore, a top-emission type organic electroluminescence display device additionally comprises a reflection layer between the passivation layers and the first electrode layer to maximize reflection efficiency. Additionally, luminance between pixels is uniformed by stabilizing contact resistance between the electrodes during driving of the display device with the source/drain electrodes of the thin film transistor being directly contacted with the transparent electrode layer.
摘要翻译： 本发明涉及顶发射型有机电致发光显示装置，更具体地说，涉及一种顶发射型有机电致发光显示装置，该顶发射型有机电致发光显示装置包括无机绝缘层和形成在薄的上部的有机平坦化层的双钝化层 薄膜晶体管，其包括在衬底上的半导体层，栅极电极和源/漏电极; 形成在所述双钝化层之间的反射层; 以及由透明材料形成并形成在反射层上的第一电极层。 此外，顶部发射型有机电致发光显示装置还包括在钝化层和第一电极层之间的反射层，以最大化反射效率。 此外，通过使薄膜晶体管的源极/漏极直接与透明电极层接触来显示器件的驱动期间稳定电极之间的接触电阻，使像素之间的亮度均匀。
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公开(公告)号：US07417261B2
公开(公告)日：2008-08-26
申请号：US11101986
申请日：2005-04-07
申请人： Chang-Su Seo , Moon-Hee Park
发明人： Chang-Su Seo , Moon-Hee Park
IPC分类号： H01L33/00
CPC分类号： H01L51/5218 , H01L2251/5315
摘要： A top-emission organic electroluminescent display is disclosed. The top-emission organic electroluminescent display includes a first electrode layer having a reflective layer, a metal-silicide layer and a transparent electrode layer on a substrate; an organic layer including at least one emission layer; and a second electrode layer. The metal-silicide layer is disposed between the reflective layer and the transparent electrode layer to suppress galvanic corrosion caused at an interface of the reflective layer and the transparent electrode layer, and to stabilize a contact resistance between the layers, thereby obtaining uniform brightness in the pixels, and realizing a high quality image.
摘要翻译： 公开了顶部发射有机电致发光显示器。 顶部发射有机电致发光显示器包括在基板上具有反射层，金属硅化物层和透明电极层的第一电极层; 包括至少一个发射层的有机层; 和第二电极层。 金属硅化物层设置在反射层和透明电极层之间，以抑制在反射层和透明电极层的界面处引起的电偶腐蚀，并且使层之间的接触电阻稳定，从而在 像素，实现高质量的图像。
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公开(公告)号：US20050275339A1
公开(公告)日：2005-12-15
申请号：US11138857
申请日：2005-05-27
申请人： Chang-Su Seo , Moon-Hee Park , Tae-Wook Kang , Hyun-Eok Shin , Sung-sik Bae
发明人： Chang-Su Seo , Moon-Hee Park , Tae-Wook Kang , Hyun-Eok Shin , Sung-sik Bae
CPC分类号： H01L27/3244 , H01L27/3246 , H01L51/5218 , H01L51/5271 , H01L2251/5315 , H01L2251/558
摘要： An organic light emitting device (OLED) and a method of fabricating the same are provided, wherein the OLED includes a thin film transistor having a gate electrode, and source and drain electrodes on a substrate; a triple-layered pixel electrode connected to one of the source and drain electrodes through a via-contact hole formed in an insulating layer on the t substrate, and having a lower pixel electrode, a reflective layer pattern and an upper pixel electrode; an organic layer disposed on the upper pixel electrode and having at least an emission layer; and an opposite electrode disposed on the organic layer.
摘要翻译： 提供了一种有机发光器件（OLED）及其制造方法，其中OLED包括具有栅电极的薄膜晶体管，以及衬底上的源电极和漏电极; 三层像素电极，其通过形成在所述t基板上的绝缘层中的通孔接触孔连接到所述源极和漏极之一，并且具有下部像素电极，反射层图案和上部像素电极; 设置在所述上像素电极上并具有至少发射层的有机层; 以及设置在有机层上的相对电极。
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公开(公告)号：US20120146143A1
公开(公告)日：2012-06-14
申请号：US13162836
申请日：2011-06-17
申请人： Tae-Wook KANG , Chang-Yong Jeong , Chang-Soo Kim , Chang-Su Seo , Moon-Hee Park
发明人： Tae-Wook KANG , Chang-Yong Jeong , Chang-Soo Kim , Chang-Su Seo , Moon-Hee Park
IPC分类号： H01L29/786 , H01L23/522
CPC分类号： H01L29/41733 , H01L21/76804 , H01L27/124 , H01L27/1248 , H01L29/66757
摘要： A semiconductor device and method of fabricating the same, which forms a contact hole, a via hole or a via contact hole with multiple profiles with various taper angles. The semiconductor device includes a substrate, a thin film transistor formed on the substrate and having a semiconductor layer, a gate insulating layer, a gate electrode, and an interlayer dielectric, and a contact hole penetrating the gate insulating layer and the interlayer dielectric and exposing a portion of the semiconductor layer. The contact hole has a multiple profile in which an upper portion of the contact hole has a wet etch profile and a lower portion of the contact hole has at least one of the wet etch profile and a dry etch profile.
摘要翻译： 一种半导体器件及其制造方法，其形成具有多个锥形角的多个型材的接触孔，通孔或通孔接触孔。 所述半导体器件包括衬底，形成在所述衬底上并具有半导体层，栅极绝缘层，栅极电极和层间电介质的薄膜晶体管，以及穿过所述栅极绝缘层和所述层间电介质的接触孔和暴露 半导体层的一部分。 接触孔具有多个轮廓，其中接触孔的上部具有湿蚀刻轮廓，并且接触孔的下部具有湿蚀刻轮廓和干蚀刻轮廓中的至少一个。
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