摘要:
An organic light emitting device (OLED) and a method of fabricating the same are provided, wherein the OLED includes a thin film transistor having a gate electrode, and source and drain electrodes on a substrate; a triple-layered pixel electrode connected to one of the source and drain electrodes through a via-contact hole formed in an insulating layer on the substrate, and having a lower pixel electrode, a reflective layer pattern and an upper pixel electrode; an organic layer disposed on the upper pixel electrode and having at least an emission layer; and an opposite electrode disposed on the organic layer.
摘要:
A semiconductor device and method of fabricating the same, which forms a contact hole, a via hole or a via contact hole with multiple profiles with various taper angles. The semiconductor device includes a substrate, a thin film transistor formed on the substrate and having a semiconductor layer, a gate insulating layer, a gate electrode, and an interlayer dielectric, and a contact hole penetrating the gate insulating layer and the interlayer dielectric and exposing a portion of the semiconductor layer. The contact hole has a multiple profile in which an upper portion of the contact hole has a wet etch profile and a lower portion of the contact hole has at least one of the wet etch profile and a dry etch profile.
摘要:
An organic light emitting device (OLED) and a method of fabricating the same are provided, wherein the OLED includes a thin film transistor having a gate electrode, and source and drain electrodes on a substrate; a triple-layered pixel electrode connected to one of the source and drain electrodes through a via-contact hole formed in an insulating layer on the substrate, and having a lower pixel electrode, a reflective layer pattern and an upper pixel electrode; an organic layer disposed on the upper pixel electrode and having at least an emission layer; and an opposite electrode disposed on the organic layer.
摘要:
The present invention relates to a top-emission type organic electroluminescence display device, more particularly, to a top-emission type organic electroluminescence display device comprising double passivation layers of an inorganic insulation layer and an organic planarization layer formed on an upper part of a thin film transistor comprising a semiconductor layer, gate electrode and source/drain electrodes on a substrate; a reflection layer formed between the double passivation layers; and a first electrode layer formed of a transparent material and formed on a reflection layer. Furthermore, a top-emission type organic electroluminescence display device additionally comprises a reflection layer between the passivation layers and the first electrode layer to maximize reflection efficiency. Additionally, luminance between pixels is uniformed by stabilizing contact resistance between the electrodes during driving of the display device with the source/drain electrodes of the thin film transistor being directly contacted with the transparent electrode layer.
摘要:
A top-emission organic electroluminescent display is disclosed. The top-emission organic electroluminescent display includes a first electrode layer having a reflective layer, a metal-silicide layer and a transparent electrode layer on a substrate; an organic layer including at least one emission layer; and a second electrode layer. The metal-silicide layer is disposed between the reflective layer and the transparent electrode layer to suppress galvanic corrosion caused at an interface of the reflective layer and the transparent electrode layer, and to stabilize a contact resistance between the layers, thereby obtaining uniform brightness in the pixels, and realizing a high quality image.
摘要:
An organic light emitting device (OLED) and a method of fabricating the same are provided, wherein the OLED includes a thin film transistor having a gate electrode, and source and drain electrodes on a substrate; a triple-layered pixel electrode connected to one of the source and drain electrodes through a via-contact hole formed in an insulating layer on the t substrate, and having a lower pixel electrode, a reflective layer pattern and an upper pixel electrode; an organic layer disposed on the upper pixel electrode and having at least an emission layer; and an opposite electrode disposed on the organic layer.
摘要:
An active matrix LED display apparatus and a fabrication method thereof are provided. The active matrix LED display apparatus enables to miniaturize pixel by a formation of wiring on bottom layer and an assembly of each block through each eutectic layer into each transistor block receptor and/or each LED block receptor formed according to each color element unit, and to be embodied with high luminance, low power consumption, high reliability and superior optical property by assembling a transistor block having high electron mobility. And the fabricating method of the present invention enables to make efficiently an AM-LED display apparatus at room temperature in a short time by using different shapes of receptor and block depending on the function of a transistor and/or on the color of an LED.
摘要:
A semiconductor device and method of fabricating the same, which forms a contact hole, a via hole or a via contact hole with multiple profiles with various taper angles. The semiconductor device includes a substrate, a thin film transistor formed on the substrate and having a semiconductor layer, a gate insulating layer, a gate electrode, and an interlayer dielectric, and a contact hole penetrating the gate insulating layer and the interlayer dielectric and exposing a portion of the semiconductor layer. The contact hole has a multiple profile in which an upper portion of the contact hole has a wet etch profile and a lower portion of the contact hole has at least one of the wet etch profile and a dry etch profile.
摘要:
A flat panel display, and method of fabricating the same, including a substrate having a display portion and a pad that is arranged on the substrate and is electrically coupled with the display portion. The pad includes a pad electrode arranged on the substrate, a passivation layer arranged on the pad electrode and having only one contact hole that exposes the pad electrode, and a transparent electrode arranged on the passivation layer and the pad electrode. The passivation layer may alternatively have a plurality of contact holes that expose the pad electrode. In this case, the reflective layer pattern is arranged on the passivation layer and the pad electrode, and it exposes portions of the pad electrode in the contact holes. Furthermore, the transparent electrode would be arranged on the reflective layer pattern and the exposed portions of the pad electrode.
摘要:
A flat panel display, and method of fabricating the same, including a substrate having a display portion and a pad that is arranged on the substrate and is electrically coupled with the display portion. The pad includes a pad electrode arranged on the substrate, a passivation layer arranged on the pad electrode and having only one contact hole that exposes the pad electrode, and a transparent electrode arranged on the passivation layer and the pad electrode. The passivation layer may alternatively have a plurality of contact holes that expose the pad electrode. In this case, the reflective layer pattern is arranged on the passivation layer and the pad electrode, and it exposes portions of the pad electrode in the contact holes. Furthermore, the transparent electrode would be arranged on the reflective layer pattern and the exposed portions of the pad electrode.