公开(公告)号：US20070023851A1

公开(公告)日：2007-02-01

申请号：US11516473

申请日：2006-09-06

申请人： John Hartzell ,  Changqing Zhan ,  Michael Wolfson

发明人： John Hartzell ,  Changqing Zhan ,  Michael Wolfson

IPC分类号： H01L29/66

CPC分类号： G01L1/18 ,  B81C1/00246 ,  G01L1/16 ,  H01L27/12 ,  H01L27/20 ,  H04R17/02 ,  H04R19/00 ,  H04R31/00 ,  H04R2499/11

摘要： A MEMS pixel sensor is provided with a thin-film mechanical device having a mechanical body, with a mechanical state responsive to a proximate environment. A thin-film electronic device converts the mechanical state into electrical signals. A pixel interface supplies power to the electronic device and transceives electrical signals. The sensor is able to operate dynamically, in real-time. For example, if the mechanical device undergoes a sequence of mechanical states at a corresponding plurality of times, the electronic device is able to supply a sequence of electrical signals to the pixel interface that are responsive to the sequence of mechanical states, at the plurality of times. Each MEMS pixel sensor may include a number of mechanical devices, and corresponding electronic devices, to provide redundancy or to measure a broadband response range.

摘要翻译： MEMS像素传感器设置有具有机械体的薄膜机械装置，其具有响应于邻近环境的机械状态。 薄膜电子设备将机械状态转换为电信号。 像素接口为电子设备供电并收发电信号。 该传感器能够实时动态地运行。 例如，如果机械装置在相应的多次经历了一系列机械状态，那么电子装置能够在多个时刻向像素接口提供响应于机械状态序列的电信号序列 次 每个MEMS像素传感器可以包括多个机械装置和相应的电子装置，以提供冗余或测量宽带响应范围。

公开(公告)号：US20070287233A1

公开(公告)日：2007-12-13

申请号：US11818716

申请日：2007-06-15

申请人： Changqing Zhan ,  Michael Wolfson ,  John Hartzell

发明人： Changqing Zhan ,  Michael Wolfson ,  John Hartzell

IPC分类号： H01L21/339

CPC分类号： B81B3/0021 ,  B81B2201/0292 ,  B81B2203/0118 ,  B81C1/00246 ,  B81C2203/075 ,  C30B1/02 ,  C30B29/00 ,  G01L1/044 ,  G01L9/0042 ,  G01P15/0802 ,  G01P15/124 ,  G01P2015/0828 ,  H01L27/12 ,  H01L29/66757 ,  H04R17/02 ,  H04R31/006

摘要： A piezo-TFT cantilever microelectromechanical system (MEMS) and associated fabrication processes are provided. The method comprises: providing a substrate, such as glass for example; forming thin-films overlying the substrate; forming a thin-film cantilever beam; and simultaneously forming a TFT within the cantilever beam. The TFT is can be formed least partially overlying a cantilever beam top surface, at least partially overlying a cantilever beam bottom surface, or embedded within the cantilever beam. In one example, forming thin-films on the substrate includes: selectively forming a first layer with a first stress level; selectively forming a first active Si region overlying the first layer; and selectively forming a second layer overlying the first layer with a second stress level. The thin-film cantilever beam is formed from the first and second layers, while the TFT source/drain (S/D) and channel regions are formed from the first active Si region.

摘要翻译： 提供了压电TFT悬臂微机电系统（MEMS）及相关制造工艺。 该方法包括：提供例如玻璃等基板; 形成覆盖衬底的薄膜; 形成薄膜悬臂梁; 并且同时在悬臂梁内形成TFT。 TFT可以形成为最少部分地覆盖在悬臂梁顶表面上，至少部分地覆盖悬臂梁底表面或嵌入在悬臂梁内。 在一个示例中，在衬底上形成薄膜包括：选择性地形成具有第一应力水平的第一层; 选择性地形成覆盖在第一层上的第一有源Si区; 以及以第二应力水平选择性地形成覆盖所述第一层的第二层。 薄膜悬臂梁由第一和第二层形成，而TFT源极/漏极（S / D）和沟道区域由第一有源Si区形成。

公开(公告)号：US20050130360A1

公开(公告)日：2005-06-16

申请号：US11031320

申请日：2005-01-05

申请人： Changqing Zhan ,  Michael Wolfson ,  John Hartzell

发明人： Changqing Zhan ,  Michael Wolfson ,  John Hartzell

IPC分类号： H01L21/336

CPC分类号： B81B3/0021 ,  B81B2201/0292 ,  B81B2203/0118 ,  B81C1/00246 ,  B81C2203/075 ,  C30B1/02 ,  C30B29/00 ,  G01L1/044 ,  G01L9/0042 ,  G01P15/0802 ,  G01P15/124 ,  G01P2015/0828 ,  H01L27/12 ,  H01L29/66757 ,  H04R17/02 ,  H04R31/006

摘要： A piezo-TFT cantilever microelectromechanical system (MEMS) and associated fabrication processes are provided. The method comprises: providing a substrate, such as glass for example; forming thin-films overlying the substrate; forming a thin-film cantilever beam; and simultaneously forming a TFT within the cantilever beam. The TFT is can be formed least partially overlying a cantilever beam top surface, at least partially overlying a cantilever beam bottom surface, or embedded within the cantilever beam. In one example, forming thin-films on the substrate includes: selectively forming a first layer with a first stress level; selectively forming a first active Si region overlying the first layer; and selectively forming a second layer overlying the first layer with a second stress level. The thin-film cantilever beam is formed from the first and second layers, while the TFT source/drain (S/D) and channel regions are formed from the first active Si region.

摘要翻译： 提供了压电TFT悬臂微机电系统（MEMS）及相关制造工艺。 该方法包括：提供例如玻璃等基板; 形成覆盖衬底的薄膜; 形成薄膜悬臂梁; 并且同时在悬臂梁内形成TFT。 TFT可以形成为最少部分地覆盖在悬臂梁顶表面上，至少部分地覆盖悬臂梁底表面或嵌入在悬臂梁内。 在一个示例中，在衬底上形成薄膜包括：选择性地形成具有第一应力水平的第一层; 选择性地形成覆盖在第一层上的第一有源Si区; 以及以第二应力水平选择性地形成覆盖所述第一层的第二层。 薄膜悬臂梁由第一和第二层形成，而TFT源极/漏极（S / D）和沟道区域由第一有源Si区形成。