公开(公告)号：US20160284697A1

公开(公告)日：2016-09-29

申请号：US15053262

申请日：2016-02-25

申请人： Changseop YOON ,  Jayeol GOO ,  Sang Gil KIM

发明人： Changseop YOON ,  Jayeol GOO ,  Sang Gil KIM

IPC分类号： H01L27/088 ,  H01L29/08

CPC分类号： H01L27/088 ,  H01L21/823418 ,  H01L21/823456 ,  H01L21/823475 ,  H01L27/0886 ,  H01L27/092 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/4238 ,  H01L29/7848

摘要： A semiconductor device includes a plurality of active patterns protruding from a substrate, a gate structure intersecting the plurality of active patterns, a plurality of source/drain regions respectively on the plurality of active patterns at opposite sides of the gate structure, and source/drain contacts intersecting the plurality of active patterns, each of the source/drain contacts connected in common to the source/drain regions thereunder, each of the plurality of source/drain regions including a first portion in contact with a top surface of the active pattern thereunder, the first portion having a width substantially increasing as a distance from the substrate increases, and a second portion extending from the first portion, the second portion having a width substantially decreasing as a distance from the substrate increases, bottom surfaces of the source/drain contacts being lower than an interface between the first and second portions.

摘要翻译： 半导体器件包括从衬底突出的多个有源图案，与多个有源图案相交的栅极结构，分别在栅极结构的相对侧的多个有源图案上的多个源极/漏极区域，以及源极/漏极 触点与多个有源图形相交，每个源极/漏极触点共同连接到其下面的源极/漏极区域，多个源极/漏极区域中的每个源极/漏极区域包括与其下方的有源图案的顶表面接触的第一部分 第一部分具有随着离开衬底的距离而显着增加的宽度增加，并且从第一部分延伸的第二部分具有与衬底的距离基本上减小的宽度增加，源极/漏极的底表面 触点低于第一和第二部分之间的界面。