摘要:
Disclosed is a current sense amplifier suitable for a nonvolatile memory device such as a magnetic random access memory. In the current sense amplifier, a reference memory cell for sensing is implemented by a memory cell equal to a normal memory cell without fabricating different reference memory cells. The current sense amplifier is formed of first and second cross coupled differential amplifiers being covalent bonded. The current sense amplifier compares a current flowing to a sensing node of a memory cell directly with currents flowing to reference sensing nodes.
摘要:
Disclosed is a method of booting a user device including a nonvolatile random access memory (RAM) and a mode register. The method includes reading a Basic Input/Output System (BIOS) refresh setting during a booting operation, and setting the mode register to a refresh timing mode of the nonvolatile RAM according to the BIOS refresh setting. The refresh timing mode selectively includes a refresh inactivation mode for inactivating a refresh operation of the nonvolatile RAM or a refresh execution mode of multiple refresh execution modes having corresponding different refresh periods for activating the refresh operation of the nonvolatile RAM.