公开(公告)号：US20070190474A1

公开(公告)日：2007-08-16

申请号：US11345067

申请日：2006-02-01

申请人： Chao Su ,  Jen-Feng Yao ,  Yang Fan

发明人： Chao Su ,  Jen-Feng Yao ,  Yang Fan

IPC分类号： F27D19/00

CPC分类号： F27D19/00 ,  F27D21/00 ,  H01L21/67017 ,  H01L21/67253

摘要： A system comprises at least one semiconductor fabrication process apparatus with a fan for providing a downflow. A sensor is disposed on or in a conduit that is fluidly coupled to the semiconductor fabrication process apparatus for releasing an exhaust fluid of a process. The sensor is capable of detecting a characteristic of the exhaust fluid flowing within the conduit and producing a signal indicating the characteristic. A processor is coupled to the sensor. A venting apparatus is coupled to the processor. The processor compares the characteristic of the exhaust fluid with at least one predetermined value to control the venting apparatus.

摘要翻译： 系统包括具有用于提供下流的风扇的至少一个半导体制造处理装置。 传感器设置在流体耦合到半导体制造处理装置的导管中或导管中，用于释放过程的排出流体。 该传感器能够检测在管道内流动的排出流体的特性并产生表示该特征的信号。 处理器耦合到传感器。 排气装置连接到处理器。 处理器将排气流体的特性与至少一个预定值进行比较以控制排气装置。

公开(公告)号：US20070145429A1

公开(公告)日：2007-06-28

申请号：US11644578

申请日：2006-12-22

申请人： Richard Francis ,  Yang Fan ,  Eric Johnson ,  Hy Hoang

发明人： Richard Francis ,  Yang Fan ,  Eric Johnson ,  Hy Hoang

IPC分类号： H01L29/80

CPC分类号： H01L29/872 ,  H01L27/0641 ,  H01L27/0814 ,  H01L27/0817 ,  H01L29/0623 ,  H01L29/7722 ,  H01L29/8083 ,  H01L29/861 ,  H01L29/8725

摘要： An apparatus and method for a fast recovery rectifier structure. Specifically, the structure includes a substrate of a first dopant. A first epitaxial layer lightly doped with the first dopant is coupled to the substrate. A first metallization layer is coupled to the first epitaxial layer. A plurality of trenches is recessed into the first epitaxial layer, each of which is coupled to the metallization layer. The device also includes a plurality of wells each doped with a second dopant type, wherein each well is formed beneath and adjacent to a corresponding trench. A plurality of oxide layers is formed on walls and a bottom of a corresponding trench. A plurality of channel regions doped with the first dopant is formed within the first epitaxial layer between two corresponding wells. Each of the plurality of channel regions is more highly doped with the first dopant than the first epitaxial layer.

摘要翻译： 一种快速恢复整流器结构的装置和方法。 具体地，该结构包括第一掺杂剂的衬底。 轻掺杂有第一掺杂剂的第一外延层耦合到衬底。 第一金属化层耦合到第一外延层。 多个沟槽凹陷到第一外延层中，每个沟槽耦合到金属化层。 该器件还包括多个孔，每个阱均掺杂有第二掺杂剂类型，其中每个阱形成在相应沟槽的下面并与其相邻。 多个氧化物层形成在相应沟槽的壁和底部上。 掺杂有第一掺杂剂的多个沟道区在两个对应的阱之间的第一外延层内形成。 多个沟道区中的每一个与第一外延层比第一掺杂物更加高掺杂。

公开(公告)号：US20070145414A1

公开(公告)日：2007-06-28

申请号：US11320313

申请日：2005-12-27

申请人： Richard Francis ,  Jian Li ,  Yang Fan ,  Eric Johnson

发明人： Richard Francis ,  Jian Li ,  Yang Fan ,  Eric Johnson

IPC分类号： H01L23/58

CPC分类号： H01L29/872 ,  H01L29/0619 ,  H01L29/739 ,  H01L29/861 ,  H01L29/868 ,  H01L2924/0002 ,  H01L2924/00

摘要： An ultrafast recovery diode. In a first embodiment, a rectifier device comprises a substrate of a first polarity, a lightly doped layer of the first polarity coupled to the substrate and a metallization layer disposed with the lightly doped layer. The ultrafast recovery diode includes a plurality of wells, separated from one another, formed in the lightly doped layer, comprising doping of a second polarity. The plurality of wells connect to the metallization layer. The ultrafast recovery diode further includes a plurality of regions, located between wells of said plurality of wells, more highly doped of the first polarity than the lightly doped layer.

摘要翻译： 超快恢复二极管。 在第一实施例中，整流器件包括第一极性的衬底，耦合到衬底的第一极性的轻掺杂层和与轻掺杂层一起设置的金属化层。 超快恢复二极管包括在轻掺杂层中形成的彼此分离的多个阱，包括掺杂第二极性。 多个阱连接到金属化层。 超快恢复二极管还包括多个区域，位于所述多个阱的阱之间，比轻掺杂层更高掺杂的第一极性。

公开(公告)号：US20060099818A1

公开(公告)日：2006-05-11

申请号：US10981838

申请日：2004-11-05

申请人： Yang Fan ,  Yong Chang ,  Yi Chiu ,  Ping Shin

发明人： Yang Fan ,  Yong Chang ,  Yi Chiu ,  Ping Shin

IPC分类号： H01L21/8238 ,  H01L21/461 ,  H01L21/302

CPC分类号： H01L21/31111 ,  H01L21/823857 ,  H01L21/823878

摘要： A dual-tank etch method which is suitable for the stripping of a silicon nitride layer from a pad oxide layer provided on a substrate, and etching of the pad oxide layer to a desired target thickness, is disclosed. The method includes providing a first processing tank containing a silicon nitride-stripping chemical; stripping the silicon nitride layer from the pad oxide layer by placing the substrate in the first processing tank; providing a second processing tank containing an oxide-etching chemical; and etching the pad oxide layer to the desired target thickness by placing the substrate in the second processing tank. By carrying out the pad oxide-etching step and the silicon nitride-stripping step in separate processing tanks, accumulation of silicon oxide precipitates in the second processing tank is avoided.

摘要翻译： 公开了适用于从设置在基板上的焊盘氧化物层剥离氮化硅层以及将焊盘氧化物层蚀刻到所需目标厚度的双槽蚀刻方法。 该方法包括提供含有氮化硅剥离化学品的第一处理槽; 通过将衬底放置在第一处理槽中来从衬垫氧化物层剥离氮化硅层; 提供含有氧化蚀刻化学品的第二处理槽; 并通过将衬底放置在第二处理槽中来将衬垫氧化物层蚀刻到所需目标厚度。 通过在单独的处理槽中进行衬垫氧化物蚀刻步骤和氮化硅剥离步骤，避免了第二处理槽中的氧化硅沉淀物的积聚。