公开(公告)号：US12040389B2

公开(公告)日：2024-07-16

申请号：US17658335

申请日：2022-04-07

Applicant: Silanna Asia Pte Ltd

Inventor： Vadim Kushner ,  Nima Beikae

IPC: H01L29/74 ,  H01L21/8228 ,  H01L21/84 ,  H01L23/528 ,  H01L23/538 ,  H01L27/02 ,  H01L27/06 ,  H01L27/08 ,  H01L27/12 ,  H01L29/06

CPC classification number: H01L29/7436 ,  H01L21/8228 ,  H01L21/84 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/5386 ,  H01L27/0207 ,  H01L27/0262 ,  H01L27/0623 ,  H01L27/067 ,  H01L27/0817 ,  H01L27/1203 ,  H01L29/0692

Abstract: A thyristor tile includes first and second PNP tiles and first and second NPN tiles. Each PNP tile is adjacent to both NPN tiles, and each NPN tile is adjacent to both PNP tiles. A thyristor includes a plurality of PNP tiles and a plurality of NPN tiles. The PNP and NPN tiles are arranged in an alternating configuration in both rows and columns. The PNP tiles are oriented perpendicular to the NPN tiles. Interconnect layers have a geometry that enables even distribution of signals to the PNP and NPN tiles.

公开(公告)号：US09673310B2

公开(公告)日：2017-06-06

申请号：US13930759

申请日：2013-06-28

Applicant: David Schie ,  Mike Ward

Inventor： David Schie ,  Mike Ward

IPC: H05B37/00 ,  H01L29/745 ,  H01L27/08 ,  H05B33/08 ,  H02M3/07 ,  H02M1/42

CPC classification number: H01L29/7455 ,  H01L27/0814 ,  H01L27/0817 ,  H02M1/4208 ,  H02M3/07 ,  H05B33/0809 ,  H05B33/0815 ,  H05B33/0845 ,  Y02B70/126

Abstract: In one embodiment, a Light Emitting Diode (LED) driving device for driving a plurality of LEDs has a switching matrix utilizing a plurality of one of a turn off thyristors or turn off triacs coupled to the plurality of LEDs. A controller is coupled to the switching matrix responsive to a voltage of a rectified AC halfwave, wherein combinations of the plurality of LEDs are altered to ensure a maximum operating voltage of the plurality of LEDs is not exceeded. A current limiting device is coupled to the combinations of the plurality of LED to regulate current.In a second embodiment an offline charge pump utilizes a switching matrix to recombine capacitors in accordance with the voltage on the AC half wave and then in accordance with a desired output voltage to feed a load, such that said recombinations occur at a frequency much higher than the frequency of the AC rectified half wave such that charge is “pumped” from the input at one voltage to the output at another voltage through the AC halfwave while providing a constant output voltage to the load.

公开(公告)号：US20150043260A1

公开(公告)日：2015-02-12

申请号：US14456303

申请日：2014-08-11

Applicant: The Penn State Research Foundation

Inventor： Huichu Liu ,  Ramesh Vaddi ,  Vijaykrishnan Narayanan ,  Suman Datta

IPC: H01L27/06 ,  H02M7/217

CPC classification number: H01L27/0629 ,  H01L27/0814 ,  H01L27/0817 ,  H02M7/219 ,  H02M2007/2195 ,  Y02B70/1408

Abstract: A power rectifier includes a stage having a first Tunneling Field-Effect Transistor (“TFET”) having a source, a gate, and a drain, a second TFET having a source, a gate, and a drain, a third TFET having a source, a gate, and a drain, and a fourth TFET having a source, a gate, and a drain such that the source of the first TFET, the source of the second TFET, the gate of the third TFET, and the gate of the fourth TFET are connected, the gate of the first TFET, the gate of the second TFET, the source of the third TFET and the source of the fourth TFET are connected, the drain of the first TFET and the drain of the third TFET are connected, and the drain of the second TFET and the drain of the fourth TFET are connected. Alternative embodiments are also disclosed.

Abstract translation: 功率整流器包括具有源极，栅极和漏极的第一隧道场效应晶体管（“TFET”）的级，具有源极，栅极和漏极的第二TFET，具有源极， ，栅极和漏极以及具有源极，栅极和漏极的第四TFET，使得第一TFET的源极，第二TFET的源极，第三TFET的栅极和第三TFET的栅极 连接第四TFET，第一TFET的栅极，第二TFET的栅极，第三TFET的源极和第四TFET的源极连接，第一TFET的漏极和第三TFET的漏极连接 并且连接第二TFET的漏极和第四TFET的漏极。 还公开了替代实施例。

公开(公告)号：US20150002035A1

公开(公告)日：2015-01-01

申请号：US13930759

申请日：2013-06-28

Applicant: David Schie ,  Mike Ward

Inventor： David Schie ,  Mike Ward

IPC: H05B33/08 ,  H01L29/745 ,  H01L27/08 ,  H01L29/74 ,  H02M3/07 ,  H01G4/38

CPC classification number: H01L29/7455 ,  H01L27/0814 ,  H01L27/0817 ,  H02M1/4208 ,  H02M3/07 ,  H05B33/0809 ,  H05B33/0815 ,  H05B33/0845 ,  Y02B70/126

Abstract: In one embodiment, a Light Emitting Diode (LED) driving device for driving a plurality of LEDs has a switching matrix utilizing a plurality of one of a turn off thyristors or turn off triacs coupled to the plurality of LEDs. A controller is coupled to the switching matrix responsive to a voltage of a rectified AC halfwave, wherein combinations of the plurality of LEDs are altered to ensure a maximum operating voltage of the plurality of LEDs is not exceeded. A current limiting device is coupled to the combinations of the plurality of LED to regulate current.In a second embodiment an offline charge pump utilizes a switching matrix to recombine capacitors in accordance with the voltage on the AC half wave and then in accordance with a desired output voltage to feed a load, such that said recombinations occur at a frequency much higher than the frequency of the AC rectified half wave such that charge is “pumped” from the input at one voltage to the output at another voltage through the AC halfwave while providing a constant output voltage to the load.

Abstract translation: 在一个实施例中，用于驱动多个LED的发光二极管（LED）驱动装置具有利用耦合到多个LED的关闭晶闸管或关闭三端双向可控硅开关中的多个的开关矩阵。 响应于整流AC半波的电压，控制器耦合到开关矩阵，其中改变多个LED的组合以确保不超过多个LED的最大工作电压。 电流限制装置耦合到多个LED的组合以调节电流。 在第二实施例中，离线电荷泵利用开关矩阵根据AC半波上的电压重新组合电容器，然后根据期望的输出电压来馈送负载，使得所述重组以远高于 交流整流半波的频率使得电荷通过AC半波从一个电压的输入“泵入”到另一电压的输出，同时向负载提供恒定的输出电压。

公开(公告)号：US20140232281A1

公开(公告)日：2014-08-21

申请号：US13833865

申请日：2013-03-15

Applicant: TOSHIBA LIGHTING & TECHNOLOGY CORPORATION

Inventor： Hirokazu Otake ,  Noriyuki Kitamura ,  Yuji Takahashi ,  Hiroshi Akahoshi

IPC: H02M7/06 ,  H02M3/335 ,  H05B33/08

CPC classification number: H02M7/06 ,  H01L27/0817 ,  H02M3/1588 ,  H02M3/335 ,  H05B33/08 ,  Y02B70/1466

Abstract: According to an embodiment, a rectifier circuit includes a first diode, a switching element, and a second diode. The first diode is connected between a first terminal and a second terminal so that a direction toward the first terminal from the second terminal is in a forward direction. The switching element has a first main electrode connected to the first terminal, a second main electrode connected to a cathode of the first diode, and a gate electrode connected to an anode of the first diode. The second diode is connected in parallel with respect to the switching element so that a direction toward the first terminal from the cathode of the first diode is in a forward direction, between the first main electrode and the second main electrode of the switching element.

Abstract translation: 根据实施例，整流器电路包括第一二极管，开关元件和第二二极管。 第一二极管连接在第一端子和第二端子之间，使得从第二端子朝向第一端子的方向处于向前方向。 开关元件具有连接到第一端子的第一主电极，连接到第一二极管的阴极的第二主电极和连接到第一二极管的阳极的栅电极。 第二二极管相对于开关元件并联连接，使得从第一二极管的阴极朝向第一端子的方向在开关元件的第一主电极和第二主电极之间的正向方向上。

公开(公告)号：US20140104733A1

公开(公告)日：2014-04-17

申请号：US14109080

申请日：2013-12-17

Applicant: Micron Technology, Inc.

Inventor： XIAOFENG FAN ,  MICHAEL D. CHAINE

IPC: H02H9/04 ,  H01L27/02

CPC classification number: H02H9/044 ,  H01L27/0259 ,  H01L27/0262 ,  H01L27/0617 ,  H01L27/0817 ,  H02H9/046

Abstract: Circuits, integrated circuits, apparatuses, and methods, such as those for protecting circuits against electrostatic discharge events are disclosed. In an example method, a thyristor is triggered to conduct current from a signal node to a reference voltage node using leakage currents provided by a transistor formed in a semiconductor doped well shared with the base of the thyristor. The leakage currents are responsive to a noise event (e.g., electrostatic discharge (ESD) event) at the signal node, and increase the voltage of the semiconductor doped well to forward bias the base and the collector of the thyristor. The triggered thyristor conducts the current resulting from the ESD event to the reference voltage node.

Abstract translation: 公开了用于保护电路免受静电放电事件的电路，集成电路，装置和方法。 在一个示例性方法中，晶闸管被触发以使用由在晶体管的基极共享的半导体掺杂阱中形成的晶体管提供的漏电流从信号节点传导到参考电压节点。 泄漏电流响应于信号节点处的噪声事件（例如，静电放电（ESD）事件），并且增加半导体掺杂阱的电压以使晶闸管的基极和集电极正向偏置。 触发晶闸管将ESD事件导致的电流导通到参考电压节点。

公开(公告)号：US08501580B2

公开(公告)日：2013-08-06

申请号：US13036582

申请日：2011-02-28

Applicant: Jerry Hu ,  Panchien Lin ,  Bert Huang

Inventor： Jerry Hu ,  Panchien Lin ,  Bert Huang

IPC: H01L21/76 ,  H01L21/30 ,  H01L21/425 ,  H01L21/302

CPC classification number: H01L21/76283 ,  H01L21/761 ,  H01L21/76237 ,  H01L27/0255 ,  H01L27/0814 ,  H01L27/0817

Abstract: A process for fabricating a semiconductor device includes depositing n-type dopant on a p-type substrate, implanting n-type material into the substrate, and growing an n-type epitaxial layer atop the n+ layer. Trenches surrounding the device region are formed and an n+ layer on the sidewalls of the trenches is formed. The trenches are filled by growing a layer of thermal oxide on the sidewalls of the trenches and deposition of plasma enhanced oxide or polysilicon into the trenches, and planarizing the top surface. n+ region of the device is formed by forming an oxide layer on the top surface of the device layer and etching the oxide, depositing n-type dopant material and driving in by high temperature diffusion. p+ region of the device is formed by etching the oxide, depositing p-type dopant material and driving in by high temperature diffusion so that the breakdown voltage is set for circuit protection.

Abstract translation: 一种用于制造半导体器件的工艺包括在p型衬底上沉积n型掺杂剂，将n型材料注入到衬底中，以及在n +层顶上生长n型外延层。 形成围绕器件区域的沟槽，并形成沟槽侧壁上的n +层。 通过在沟槽的侧壁上生长一层热氧化物并且将等离子体增强的氧化物或多晶硅沉积到沟槽中并平坦化顶表面来填充沟槽。 n +区域通过在器件层的顶表面上形成氧化物层并蚀刻氧化物，沉积n型掺杂剂材料并通过高温扩散进行而形成。 通过蚀刻氧化物，沉积p型掺杂剂材料并通过高温扩散驱动来形成器件的p +区，从而设置用于电路保护的击穿电压。

公开(公告)号：US20130153953A1

公开(公告)日：2013-06-20

申请号：US13328796

申请日：2011-12-16

Applicant: Ahmed Elasser ,  Arthur Stephen Daley ,  Alexey Vert ,  Stanislav I. Soloviev ,  Peter Almern Losee

Inventor： Ahmed Elasser ,  Arthur Stephen Daley ,  Alexey Vert ,  Stanislav I. Soloviev ,  Peter Almern Losee

IPC: H01L27/06 ,  H01L21/332

CPC classification number: H01L31/1113 ,  H01L27/0817 ,  H01L29/74

Abstract: A thyristor device includes a semiconductor body and a conductive anode. The semiconductor body has a plurality of doped layers forming a plurality of dopant junctions and includes an optical thyristor, a first amplifying thyristor, and a switching thyristor. The conductive anode is disposed on a first side of the semiconductor body. The optical thyristor is configured to receive incident radiation to generate a first electric current, and the first amplifying thyristor is configured to increase the first electric current from the optical thyristor to at least a threshold current. The switching thyristor switches to the conducting state in order to conduct a second electric current from the anode and through the semiconductor body.

公开(公告)号：US08416015B2

公开(公告)日：2013-04-09

申请号：US13078386

申请日：2011-04-01

Applicant: Chikara Tsuchiya

Inventor： Chikara Tsuchiya

IPC: H03K17/74 ,  H03G11/02

CPC classification number: H03K17/302 ,  H01L27/0817 ,  H01L27/088 ,  H03K2017/307

Abstract: A semiconductor apparatus includes: a first transistor; a second transistor having a higher withstand voltage than the first transistor, a source of the second transistor coupled to a drain of the first transistor, a gate of the second transistor coupled to a source of the first transistor; a third transistor having a higher withstand voltage than the first transistor and a drain of the third transistor coupled to a drain of the second transistor; and a comparator that compares a source voltage of the first transistor with a source voltage of the third transistor, and controls a gate voltage of the first transistor.

Abstract translation: 一种半导体装置，包括：第一晶体管; 第二晶体管具有比第一晶体管更高的耐受电压，第二晶体管的源极耦合到第一晶体管的漏极，第二晶体管的栅极耦合到第一晶体管的源极; 具有比第一晶体管更高的耐受电压的第三晶体管和耦合到第二晶体管的漏极的第三晶体管的漏极; 以及比较器，其将第一晶体管的源极电压与第三晶体管的源极电压进行比较，并且控制第一晶体管的栅极电压。

公开(公告)号：US20120200975A1

公开(公告)日：2012-08-09

申请号：US13366944

申请日：2012-02-06

Applicant: Lung-Ching Kao ,  Pu-Ju Kung ,  Yu-Ju Yu

Inventor： Lung-Ching Kao ,  Pu-Ju Kung ,  Yu-Ju Yu

IPC: H02H3/22 ,  H01R43/00

CPC classification number: H01L29/868 ,  H01L27/0814 ,  H01L27/0817 ,  H01L29/861 ,  H01L29/872 ,  Y10T29/49117 ,  Y10T29/49169 ,  Y10T29/49171

Abstract: A low forward voltage drop transient voltage suppressor utilizes a low-reverse-voltage-rated PN diode electrically connected in parallel to a high-reverse-voltage-rated Schottky rectifier in a single integrated circuit device. The transient voltage suppressor is ideally suited to fix the problem of high forward voltage drop of PN diodes and high leakage of low reverse breakdown of Schottky rectifiers. The low-reverse-voltage PN rectifier can be fabricated through methods such as 1) double layers of epi (with higher concentration layer epi in the bottom) or 2) punch through design of PN diode by base with compression.

Abstract translation: 低正向压降瞬态电压抑制器利用在单个集成电路器件中与高反向电压额定肖特基整流器并联电连接的低反向电压额定PN二极管。 瞬态电压抑制器非常适合固定PN二极管的高正向压降和肖特基整流器低反向击穿的高泄漏问题。 低反向电压PN整流器可以通过以下方法制造：1）双层epi（底部具有较高浓度层epi）或2）通过压缩的基极通过PN二极管的穿孔设计。