公开(公告)号：US06309962B1

公开(公告)日：2001-10-30

申请号：US09396516

申请日：1999-09-15

申请人： Chao-Cheng Chen ,  Li-Chi Chao ,  Jen-Cheng Liu ,  Min-Huei Lui ,  Chia-Shiung Tsai

发明人： Chao-Cheng Chen ,  Li-Chi Chao ,  Jen-Cheng Liu ,  Min-Huei Lui ,  Chia-Shiung Tsai

IPC分类号： H01L214763

CPC分类号： H01L21/76811 ,  H01L21/31144 ,  H01L21/76813

摘要： A process for forming a dual damascene cavity in a dielectric, particularly a low k organic dielectric, is described. The dielectric is composed of two layers separated by an etch stop layer. Formation of the damascene cavity is achieved by using a hard mask that is made up of two layers of silicon oxynitride separated by layer of silicon oxide. For both the trench first and via first approaches, the first cavity is formed using only the upper silicon oxynitride layer as the mask. Thus, when the second portion is patterned, little or no misalignment occurs because said upper layer is relatively thin. Additional etching steps result in a cavity and trench part that extend as far as the etch stop layer located between the dielectric layers. Final removal of photoresist occurs with a hard mask still in place so no damage to the organic dielectric occurs. A final etch step then completes the process.

摘要翻译： 描述了在电介质，特别是低k有机电介质中形成双镶嵌腔的工艺。 电介质由两层由蚀刻停止层隔开组成。 通过使用由两层氧氮化硅分离的氧化硅层组成的硬掩模来实现镶嵌腔的形成。 对于沟槽第一和通过第一方法，仅使用上部氧氮化硅层作为掩模形成第一腔体。 因此，当第二部分被图案化时，由于所述上层相对较薄，所以几乎不发生不对准。 另外的蚀刻步骤导致空腔和沟槽部分延伸到位于电介质层之间的蚀刻停止层的尽可能深。 光致抗蚀剂的最终去除是在硬掩模仍然存在的情况下发生的，因此不会损害有机电介质。 最终蚀刻步骤然后完成该过程。

公开(公告)号：US06297168B1

公开(公告)日：2001-10-02

申请号：US09677068

申请日：2000-09-29

申请人： Jyu-Horng Shieh ,  Jen-Cheng Liu ,  Chao-Cheng Chen ,  Li-Chi Chao ,  Chia-Shia Tsai

发明人： Jyu-Horng Shieh ,  Jen-Cheng Liu ,  Chao-Cheng Chen ,  Li-Chi Chao ,  Chia-Shia Tsai

IPC分类号： H01L213065

CPC分类号： H01L21/7681 ,  H01L21/31116

摘要： Within a method for etching a trench within a silicon oxide layer there is first provided a substrate. There is then formed over the substrate a silicon oxide layer. There is then formed over the silicon oxide layer a masking layer. There is then etched, while employing a plasma etch method in conjunction with the masking layer as an etch mask layer, the silicon oxide layer to form an etched silicon oxide layer defining a trench. Within the method, the plasma etch method employs an etchant gas composition comprising: (1) octafluorocyclobutane; and (2) at least one of carbon tetrafluoride, difluoromethane, hexafluoroethane and oxygen; but excluding (3) a carbon and oxygen containing gas.

摘要翻译： 在氧化硅层内蚀刻沟槽的方法中，首先提供衬底。 然后在衬底上形成氧化硅层。 然后在氧化硅层上形成掩模层。 然后蚀刻，同时使用等离子体蚀刻方法结合掩模层作为蚀刻掩模层，氧化硅层形成蚀刻氧化硅层，限定沟槽。 在该方法中，等离子体蚀刻方法采用蚀刻剂气体组合物，其包含：（1）八氟环丁烷; 和（2）四氟化碳，二氟甲烷，六氟乙烷和氧中的至少一种; 但不包括（3）含碳和含氧气体。