公开(公告)号：US06875705B2

公开(公告)日：2005-04-05

申请号：US10235193

申请日：2002-09-04

申请人： Chao-Jie Tsai ,  Jeng Yang Pan ,  Chin-Nan Wu ,  Meng-Chang Liu ,  Su-Yu Yeh

发明人： Chao-Jie Tsai ,  Jeng Yang Pan ,  Chin-Nan Wu ,  Meng-Chang Liu ,  Su-Yu Yeh

IPC分类号： H01L21/285 ,  H01L21/302 ,  H01L21/3213 ,  H01L21/461

CPC分类号： H01L21/32134 ,  H01L21/28518

摘要： A method for forming salicides with lower sheet resistance and increased sheet resistance uniformity over a semiconductor process wafer including providing a semiconductor process wafer having exposed silicon containing areas at a process surface; depositing a metal layer including at least one of cobalt and titanium over the process surface; carrying out at least one thermal annealing process to react the metal layer and silicon to form a metal silicide over the silicon containing areas; and, wet etching unsilicided areas of the metal layer with a wet etching solution including phosphoric acid (H3PO4), nitric acid (HNO3), and a carboxylic acid to leave salicides covering silicon containing areas at the process surface.

摘要翻译： 一种用于在半导体工艺晶片上形成具有较低的薄层电阻和增加的薄层电阻均匀性的硫化物的方法，包括提供在处理表面具有暴露的含硅区域的半导体工艺晶片; 在工艺表面上沉积包括钴和钛中的至少一种的金属层; 执行至少一个热退火工艺以使金属层和硅反应以在含硅区域上形成金属硅化物; 并用含有磷酸（H 3 PO 4），硝酸（HNO 3）和羧酸的湿蚀刻溶液湿法蚀刻金属层的无硅区域，以留下在工艺表面覆盖含硅区域的水杨酸盐。