公开(公告)号：US06198116B1

公开(公告)日：2001-03-06

申请号：US09059890

申请日：1998-04-14

申请人： Charles L. A. Cerny ,  Christopher A. Bozada ,  Gregory C. DeSalvo ,  John L. Ebel ,  Ross W. Dettmer ,  James K. Gillespie ,  Charles K. Havasy ,  Thomas J. Jenkins ,  Kenichi Nakano ,  Carl I. Pettiford ,  Tony K. Quach ,  James S. Sewell ,  G. David Via

发明人： Charles L. A. Cerny ,  Christopher A. Bozada ,  Gregory C. DeSalvo ,  John L. Ebel ,  Ross W. Dettmer ,  James K. Gillespie ,  Charles K. Havasy ,  Thomas J. Jenkins ,  Kenichi Nakano ,  Carl I. Pettiford ,  Tony K. Quach ,  James S. Sewell ,  G. David Via

IPC分类号： H01L29778

CPC分类号： H01L29/66871 ,  H01L21/28587 ,  H01L21/8252 ,  H01L27/0605

摘要： A method for fabricating a periodic table group III-IV metal semiconductor metal field-effect enhancement mode complementary transistor pair device is described, a device typically made of gallium arsenide materials. The disclosed fabrication uses initially undoped semiconductor materials, single metallization for ohmic and Schottky barrier contacts, employs a non-alloyed ohmic contact semiconductor layer and includes an inorganic dielectric material layer providing non photosensitive masking at plural points in the fabrication sequence. The invention uses selective ion implantations, and a combined optical and electron beam lithographic process, the latter in small dimension gate areas. These attributes are combined to provide a field-effect transistor complementary pair of reduced fabrication cost, low electrical energy operating requirements increased dimensional accuracy and current state of the art electrical performance. Fabricated device characteristics are also disclosed.

摘要翻译： 描述了一种用于制造周期表III-IV族金属半导体金属场效应增强型互补晶体管对器件的方法，该器件通常由砷化镓材料制成。 所公开的制造使用最初未掺杂的半导体材料，用于欧姆和肖特基势垒接触的单一金属化，采用非合金欧姆接触半导体层，并且包括在制造顺序中的多个点处提供非感光掩模的无机介电材料层。 本发明使用选择性离子注入，以及组合的光学和电子束光刻工艺，后者在小尺寸栅极区域中。 这些属性被组合以提供减小制造成本的场效应晶体管互补对，低电能操作需求增加尺寸精度和现有电气性能的当前状态。 还公开了制造的器件特性。

公开(公告)号：US6066865A

公开(公告)日：2000-05-23

申请号：US59891

申请日：1998-04-14

申请人： Charles L. A. Cerny ,  Christopher A. Bozada ,  Gregory C. DeSalvo ,  John L. Ebel ,  Ross W. Dettmer ,  James K. Gillespie ,  Charles K. Havasy ,  Thomas J. Jenkins ,  Kenichi Nakano ,  Carl I. Pettiford ,  Tony K. Quach ,  James S. Sewell ,  G. David Via

发明人： Charles L. A. Cerny ,  Christopher A. Bozada ,  Gregory C. DeSalvo ,  John L. Ebel ,  Ross W. Dettmer ,  James K. Gillespie ,  Charles K. Havasy ,  Thomas J. Jenkins ,  Kenichi Nakano ,  Carl I. Pettiford ,  Tony K. Quach ,  James S. Sewell ,  G. David Via

IPC分类号： H01L21/285 ,  H01L21/335 ,  H01L29/812 ,  H01L31/0328

CPC分类号： H01L29/66462 ,  H01L21/28581 ,  H01L21/28587 ,  H01L29/8128

摘要： An enhancement mode periodic table group III-IV semiconductor field-effect transistor device is disclosed. The disclosed transistor includes single metallization for ohmic and Schottky barrier contacts, a permanent non photosensitive passivation layer (a layer which has also been used for masking purposes during fabrication of the transistor) and a gate element of small dimension and shaped cross section as needed to provide desirable microwave spectrum electrical characteristics. The transistor of the invention is fabricated from undoped semiconductor materials disposed in a layered wafer structure and selectively doped by ion implantation to achieve either a p-channel or an n-channel transistor. The semiconductor materials may include two, one or zero buffer layers in their layer structure. The disclosed transistor is of reduced fabrication cost, increased dimensional accuracy and state of the art electrical performance.

摘要翻译： 公开了一种增强型周期表III-IV族半导体场效应晶体管器件。 所公开的晶体管包括用于欧姆和肖特基势垒触点的单一金属化，永久非光敏钝化层（在晶体管制造期间也被用于掩蔽目的的层）和根据需要的小尺寸和形状的截面的栅极元件 提供所需的微波频谱电气特性。 本发明的晶体管由设置在分层晶片结构中的未掺杂半导体材料制成，并通过离子注入选择性地掺杂以实现p沟道或n沟道晶体管。 半导体材料可以包括其层结构中的两个，一个或零个缓冲层。 所公开的晶体管具有降低的制造成本，增加的尺寸精度和现有技术的电性能。

公开(公告)号：US06222210B1

公开(公告)日：2001-04-24

申请号：US09059869

申请日：1998-04-14

申请人： Charles L. A. Cerny ,  Christopher A. Bozada ,  Gregory C. DeSalvo ,  John L. Ebel ,  Ross W. Dettmer ,  James K. Gillespie ,  Charles K. Havasy ,  Thomas J. Jenkins ,  Kenichi Nakano ,  Carl I. Pettiford ,  Tony K. Quach ,  James S. Sewell ,  G. David Via

发明人： Charles L. A. Cerny ,  Christopher A. Bozada ,  Gregory C. DeSalvo ,  John L. Ebel ,  Ross W. Dettmer ,  James K. Gillespie ,  Charles K. Havasy ,  Thomas J. Jenkins ,  Kenichi Nakano ,  Carl I. Pettiford ,  Tony K. Quach ,  James S. Sewell ,  G. David Via

IPC分类号： H01L310328

CPC分类号： H01L27/0605 ,  H01L21/8252 ,  H01L29/8128

摘要： An enhancement mode periodic table group III-IV semiconductor field-effect transistor complementary pair device is disclosed. The disclosed complementary pair include single metallization for ohmic and Schottky barrier contacts, a permanent non photosensitive passivation layer (a layer which has also been used for masking purposes during fabrication of the device) and gate elements of small dimension and shaped cross section to provide desirable microwave spectrum electrical characteristics. The complementary pair of the invention is fabricated from undoped semiconductor materials disposed in a layered wafer structure and selectively doped by ion implantation to achieve both the p-channel and n-channel transistors. The semiconductor materials may include two, one or zero buffer layers in their layer structure. The disclosed complementary pair is of reduced fabrication cost, increased dimensional accuracy and state of the art electrical performance.

摘要翻译： 公开了增强型周期表III-IV族半导体场效应晶体管互补对器件。 所公开的互补对包括用于欧姆和肖特基势垒接触的单一金属化，永久非光敏钝化层（在制造器件期间也用于掩蔽目的的层）和小尺寸和成形截面的栅极元件以提供期望的 微波频谱电气特性。 本发明的互补对是由设置在分层晶片结构中的未掺杂半导体材料制造的，并通过离子注入选择性地掺杂以实现p沟道晶体管和n沟道晶体管。 半导体材料可以包括其层结构中的两个，一个或零个缓冲层。 所公开的互补对具有降低的制造成本，增加的尺寸精度和现有技术的电性能。

公开(公告)号：US6020226A

公开(公告)日：2000-02-01

申请号：US59892

申请日：1998-04-14

申请人： Charles L. A. Cerny ,  Christopher A. Bozada ,  Gregory C. DeSalvo ,  John L. Ebel ,  Ross W. Dettmer ,  James K. Gillespie ,  Charles K. Havasy ,  Thomas J. Jenkins ,  Kenichi Nakano ,  Carl I. Pettiford ,  Tony K. Quach ,  James S. Sewell ,  G. David Via

发明人： Charles L. A. Cerny ,  Christopher A. Bozada ,  Gregory C. DeSalvo ,  John L. Ebel ,  Ross W. Dettmer ,  James K. Gillespie ,  Charles K. Havasy ,  Thomas J. Jenkins ,  Kenichi Nakano ,  Carl I. Pettiford ,  Tony K. Quach ,  James S. Sewell ,  G. David Via

IPC分类号： H01L21/285 ,  H01L21/335 ,  H01L21/338

CPC分类号： H01L29/66462 ,  H01L21/28581

摘要： A method for fabricating an enhancement mode periodic table group III-IV metal semiconductor metal field-effect transistor is described. The disclosed fabrication arrangement uses single metallization for ohmic and Schottky barrier contacts, employs initially undoped semiconductor materials--materials selectively doped in a disclosed processing step, employs a non-alloyed ohmic contact semiconductor layer and includes an inorganic dielectric material layer providing non photosensitive masking at plural points in the fabrication sequence along with permanent surface passivation. The invention uses a combined optical and electron beam lithographic process, the latter in small dimension gate areas. These attributes are combined to provide a field-effect transistor capable of microwave frequency use, of reduced fabrication cost, low electrical energy operating requirements increased dimensional accuracy and state of the art electrical performance. Fabricated device characteristics are also disclosed.

摘要翻译： 描述了制造增强型周期表III-IV族金属半导体金属场效应晶体管的方法。 所公开的制造布置对欧姆和肖特基势垒触点使用单一金属化，采用最初未掺杂的半导体材料 - 在所公开的处理步骤中选择性掺杂的材料，采用非合金欧姆接触半导体层，并且包括提供非光敏掩模的无机介电材料层 制造顺序中的多个点以及永久表面钝化。 本发明使用组合的光学和电子束光刻工艺，后者在小尺寸栅极区域中。 这些属性被组合以提供能够进行微波频率使用的场效应晶体管，降低了制造成本，低电能操作要求增加了尺寸精度和现有技术的电气性能。 还公开了制造的器件特性。