公开(公告)号：US5658820A

公开(公告)日：1997-08-19

申请号：US616491

申请日：1996-03-19

Applicant: Chee-won Chung

Inventor： Chee-won Chung

IPC: H01L21/8247 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792 ,  H01L21/70 ,  H01L27/00

CPC classification number: H01L28/55

Abstract: A method for manufacturing ferroelectric thin-film which is used as a memory cell for an FRAM includes the steps of: (a) forming a lower electrode, a ferroelectric thin-film and an upper Pt electrode on a substrate in sequence; (b) forming a photoresist on the upper Pt electrode; (c) patterning the photoresist in a predetermined pattern; and (d) etching the substrate, the step (d) including the steps of installing a holder to which a predetermined DC self bias voltage is generated in a chamber of a plasma etching apparatus around which an RF coil is wound, of injecting Ar, chloric and fluoric gases of a predetermined composition ratio into the chamber, of applying a RF power of a predetermined frequency and power to the RF coil to generate an inductively coupled plasma in the chamber, and of etching down the substrate from the upper Pt electrode to the ferroelectric thin-film to a predetermined depth by the plasma of the Ar, chloric and fluoric gases using the photoresist as a mask. As a result, the etching rate of a ferroelectric thin-film and electrode is sharply increased, and particularly, the etching selectivity of the ferroelectric thin-film and electrode with respect to the photoresist is improved, so that the photoresist can be used as a mask.

Abstract translation: 用作FRAM的存储单元的铁电薄膜的制造方法包括以下步骤：（a）依次在基板上形成下电极，铁电薄膜和上Pt电极; （b）在上Pt电极上形成光致抗蚀剂; （c）以预定图案形成所述光致抗蚀剂; （d）蚀刻基板，步骤（d）包括以下步骤：在其上缠绕有RF线圈的等离子体蚀刻装置的腔室中安装产生预定的DC自偏压的保持器，注入Ar， 将具有预定组成比的氯和氟气体输送到室中，将预定频率和功率的RF功率施加到RF线圈，以在腔室中产生电感耦合等离子体，并将衬底从上Pt电极蚀刻到 通过使用光致抗蚀剂作为掩模的Ar，氯和氟气体的等离子体将铁电薄膜设置到预定深度。 结果，铁电薄膜和电极的蚀刻速率急剧增加，特别是提高了铁电薄膜和电极相对于光致抗蚀剂的蚀刻选择性，使得光致抗蚀剂可以用作 面具。

公开(公告)号：US5976394A

公开(公告)日：1999-11-02

申请号：US842828

申请日：1997-04-17

Applicant: Chee-won Chung

Inventor： Chee-won Chung

IPC: C23F4/00 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/3213

CPC classification number: H01L21/32136

Abstract: A method for dry etching a metallic thin film (i.e., platinum thin film) is disclosed whereby a clean metallic thin film can be formed by restraining redeposition of the metal. The etching gas includes a mixed gas including Cl.sub.2 and SiCl.sub.4 whereby a plasma of the mixed gas generates reactive species to react with the metallic thin film and form volatile residua that can be desorbed from the etched surface.

Abstract translation: 公开了一种用于干蚀刻金属薄膜（即铂薄膜）的方法，由此可以通过抑制金属的再沉积来形成清洁的金属薄膜。 蚀刻气体包括包含Cl 2和SiCl 4的混合气体，由此混合气体的等离子体产生反应性物质以与金属薄膜反应并形成可从蚀刻表面解吸的挥发性残余物。