公开(公告)号：US20170162646A1

公开(公告)日：2017-06-08

申请号：US15129794

申请日：2014-06-18

申请人： Chen-Guan LEE ,  Walid HAFEZ ,  Chia-Hong JAN

发明人： Chen-Guan LEE ,  Walid HAFEZ ,  Chia-Hong JAN

IPC分类号： H01L49/02 ,  H01L21/8234 ,  H01L23/66 ,  H01L27/06

CPC分类号： H01L28/20 ,  H01L21/8234 ,  H01L23/66 ,  H01L27/0629 ,  H01L27/0738 ,  H01L28/24 ,  H01L29/785

摘要： Integrated circuit structures including a pillar resistor disposed over a surface of a substrate, and fabrication techniques to form such a resistor in conjunction with fabrication of a transistor over the substrate. Following embodiments herein, a small resistor footprint may be achieved by orienting the resistive length orthogonally to the substrate surface. In embodiments, the vertical resistor pillar is disposed over a first end of a conductive trace, a first resistor contact is further disposed on the pillar, and a second resistor contact is disposed over a second end of a conductive trace to render the resistor footprint substantially independent of the resistance value. Formation of a resistor pillar may be integrated with a replacement gate transistor process by concurrently forming the resistor pillar and sacrificial gate out of a same material, such as polysilicon. Pillar resistor contacts may also be concurrently formed with one or more transistor contacts.

公开(公告)号：US20160181241A1

公开(公告)日：2016-06-23

申请号：US14909980

申请日：2013-09-27

申请人： Walid HAFEZ ,  Chen-Guan LEE ,  Chia-Hong JAN

发明人： Walid Hafez ,  Chen-Guan LEE ,  Chia-Hong JAN

IPC分类号： H01L27/06 ,  H01L49/02

CPC分类号： H01L27/0629 ,  H01C7/06 ,  H01C17/232 ,  H01L28/20 ,  H01L28/24 ,  H01L29/66439 ,  H01L29/66469 ,  H01L29/775

摘要： Methods of forming resistor structures with tunable temperature coefficient of resistance are described. Those methods and structures may include forming an opening in a resistor material adjacent source/drain openings on a device substrate, forming a dielectric material between the resistor material and the source/drain openings, and modifying the resistor material, wherein a temperature coefficient resistance (TCR) of the resistor material is tuned by the modification. The modifications include adjusting a length of the resistor, forming a compound resistor structure, and forming a replacement resistor.

摘要翻译： 描述了形成具有可调温度电阻系数的电阻结构的方法。 这些方法和结构可以包括在器件衬底上邻近源极/漏极开口处形成电阻器材料中的开口，在电阻器材料和源极/漏极开口之间形成电介质材料，并修改电阻材料，其中温度系数电阻（ 电阻材料的TCR）通过修改进行调整。 修改包括调整电阻器的长度，形成复合电阻器结构以及形成替换电阻器。