摘要:
Methods of forming a thin film are disclosed. One such method can include sputtering a target material to form a first thin film resistor and adjusting a parameter of deposition to modulate a property of a subsequently formed second thin film resistor. For instance, a substrate bias and/or a substrate temperature can be adjusted to modulate a property of the second thin film resistor. A temperature coefficient of resistance (TCR) and/or another property of the second thin film resistor can be modulated by adjusting the parameter of deposition. The target material sputtered onto the substrate can include, for example, a Cr alloy, a Ni alloy, SiCr, NiCr, or the like. A relationship can be established between the substrate bias and/or substrate temperature and the thin film resistor property, and the relationship can be used in selecting deposition conditions for a desired property value.
摘要:
A current sense resistor and a method of manufacturing a current sensing resistor with temperature coefficient of resistance (TCR) compensation are disclosed. The resistor has a resistive strip disposed between two conductive strips. A pair of main terminals and a pair of voltage sense terminals are formed in the conductive strips. A pair of rough TCR calibration slots is located between the main terminals and the voltage sense terminals, each of the rough TCR calibration slots have a depth selected to obtain a negative starting TCR value observed at the voltage sense terminals. A fine TCR calibration slot is formed between the pair of voltage sense terminals.
摘要:
Resistive elements include a patterned region of nanofabric having a predetermined area, where the nanofabric has a selected sheet resistance; and first and second electrical contacts contacting the patterned region of nanofabric and in spaced relation to each other. The resistance of the element between the first and second electrical contacts is determined by the selected sheet resistance of the nanofabric, the area of nanofabric, and the spaced relation of the first and second electrical contacts. The bulk resistance is tunable.
摘要:
Resistive elements include a patterned region of nanofabric having a predetermined area, where the nanofabric has a selected sheet resistance; and first and second electrical contacts contacting the patterned region of nanofabric and in spaced relation to each other. The resistance of the element between the first and second electrical contacts is determined by the selected sheet resistance of the nanofabric, the area of nanofabric, and the spaced relation of the first and second electrical contacts. The bulk resistance is tunable.
摘要:
There is provided a method and circuit for trimming a functional resistor on a thermally isolated micro-platform such that a second functional resistor on the same micro-platform remains substantially untrimmed; a method and circuit for providing and trimming a circuit such that at least two circuit elements of the circuit are subjected to a same operating environment and the operating environment is compensated for by distributing heat generated during operation of the circuit among the two circuit elements; a method and circuit for trimming a functional resistor on a thermally-isolated micro-platform such that a constant temperature distribution is obtained across the functional resistor; and a method and circuit for calculating a temperature coefficient of resistance of a functional resistor.
摘要:
A process of calibrating a temperature sensor includes bringing the sensor to thermal equilibrium at a selected temperature, measuring the resistance of the sensor, calculating which combination of trimming paths need be interrupted and then separately interrupting those paths apart from the measuring location. A sensor with selectably interruptable trimming paths is disclosed.
摘要:
To form a temperature sensor, for example suitable in an automotive vehicle, to determine ambient temperatures, or to provide a temperature compensated thin-film circuit, for example for incorporation with an oscillator circuit, two stable thin-film layers are applied to a non-conductive substrate, the layers being capable of being etched. The overall temperature coefficient of resistance can be matched to a predetermined value by selective interconnection of at least two thin-film resistance elements formed by the thin films, of which one thin film resistance element for example comprises a nickel layer over a tantalum base, with a predetermined temperature coefficient of resistance, the other resistance element merely being the tantalum layer with essentially zero temperature coefficient of resistance, the overall temperature coefficient of resistance of the combination being determined by adjustment of the relative resistance values after measurement of the temperature coefficient of resistance of the nickel-tantalum layer to determine its actual temperature coefficient so that, in spite of tolerances in the manufacture of the thin films, interchangeable elements of highly accurate overall resistance and temperature coefficient of resistance values can be obtained.
摘要:
A THICK FILM RESISTOR IS FORMED BY #1 FIRING SELECTED MIXTURES OF POSITIVE AND NEGATIVE THICK FILM RESISTOR INK MATERIALS ON A NON-ELECTRICALLY CONDUCTIVE SUBSTRATE AT A SELECTED HIGH TEMPERATURE AND #2 SUBSEQUENTLY JOINTLY FIRING THE RESISTOR AND CONDUCTOR INK MATERIAL ASSOCIATED WITH THIS RESISTOR, AT A TEMPERATURE THAT IS LOWER THAN THE FIRST MENTIONED TEMPERATURE AND WHICH IS AT A LEVEL THAT WILL NOT ALLOW ANY DETRIMENTAL DIFFISION, TO OCCUR BETWEEN THE CONDUCTOR AND RESISTOR MATERIALS. THIS UNIQUE PROCESS OF FIRING ACHIEVES FOR THE FIRST TIME A SUCCESSFUL METHOD OF FIRING A RESISTOR AND CONDUCTOR JOINTLY WITHOUT ALLOWING ANY ADVERSE CHANGE TO OCCUR IN THE VALUE OF THE TEMPERATURE COEFFICIENT OF RESISTIVITY AND THE RESISTIVITY VALUE OF THE RESISTOR.