公开(公告)号：US20120228655A1

公开(公告)日：2012-09-13

申请号：US13351648

申请日：2012-01-17

申请人： Chen-Yen Lin ,  Yung-Ming Lin ,  Po-Chun Yeh ,  Jeng-Wei Yu ,  Chih-Ming Lai ,  Lung-Han Peng

发明人： Chen-Yen Lin ,  Yung-Ming Lin ,  Po-Chun Yeh ,  Jeng-Wei Yu ,  Chih-Ming Lai ,  Lung-Han Peng

IPC分类号： H01L33/58 ,  H01L33/42

CPC分类号： H01L33/20 ,  H01L33/0012 ,  H01L33/0062 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light emitting diode includes a substrate, a plurality of pillar structures, a filler structure, a transparent conductive layer, a first electrode, and a second electrode. These pillar structures are formed on the substrate. Each of the pillar structures includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first type semiconductor layers are formed on the substrate. The pillar structures are electrically connected with each other through the first type semiconductor layers. The filler structure is formed between the pillar structures. The filler structure and the second type semiconductor layers of the pillar structures are covered with the transparent conductive layer. The first electrode is in contact with the transparent conductive layer. The second electrode is in contact with the first type semiconductor layer.

摘要翻译： 发光二极管包括基板，多个柱结构，填充结构，透明导电层，第一电极和第二电极。 这些柱结构形成在基板上。 每个柱结构包括第一类型半导体层，有源层和第二类型半导体层。 在基板上形成第一类型的半导体层。 柱结构通过第一类型半导体层彼此电连接。 填料结构形成在柱结构之间。 柱结构的填充结构和第二类型半导体层被透明导电层覆盖。 第一电极与透明导电层接触。 第二电极与第一类型半导体层接触。

公开(公告)号：US08487325B2

公开(公告)日：2013-07-16

申请号：US13351648

申请日：2012-01-17

申请人： Chen-Yen Lin ,  Yung-Ming Lin ,  Po-Chun Yeh ,  Jeng-Wei Yu ,  Chih-Ming Lai ,  Lung-Han Peng

发明人： Chen-Yen Lin ,  Yung-Ming Lin ,  Po-Chun Yeh ,  Jeng-Wei Yu ,  Chih-Ming Lai ,  Lung-Han Peng

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/20 ,  H01L33/0012 ,  H01L33/0062 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light emitting diode includes a substrate, a plurality of pillar structures, a filler structure, a transparent conductive layer, a first electrode, and a second electrode. These pillar structures are formed on the substrate. Each of the pillar structures includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first type semiconductor layers are formed on the substrate. The pillar structures are electrically connected with each other through the first type semiconductor layers. The filler structure is formed between the pillar structures. The filler structure and the second type semiconductor layers of the pillar structures are covered with the transparent conductive layer. The first electrode is in contact with the transparent conductive layer. The second electrode is in contact with the first type semiconductor layer.

摘要翻译： 发光二极管包括基板，多个柱结构，填充结构，透明导电层，第一电极和第二电极。 这些柱结构形成在基板上。 每个柱结构包括第一类型半导体层，有源层和第二类型半导体层。 在基板上形成第一类型的半导体层。 柱结构通过第一类型半导体层彼此电连接。 填料结构形成在柱结构之间。 柱结构的填充结构和第二类型半导体层被透明导电层覆盖。 第一电极与透明导电层接触。 第二电极与第一类型半导体层接触。