利索-全球专利检索

  1. Login
  2. Sign Up

Search Results

161 records (took 0.012 seconds)

    SEMICONDUCTOR STRUCTURE WITH SUPERLATTICES
    2.
    发明公开
    SEMICONDUCTOR STRUCTURE WITH SUPERLATTICES 审中-公开

    公开(公告)号：US20240097066A1

    公开(公告)日：2024-03-21

    申请号：US18522890

    申请日：2023-11-29

    Applicant: Silanna UV Technologies Pte Ltd

    Inventor： Petar Atanackovic

    IPC: H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L33/50 ,  H01L33/60

    CPC classification number: H01L33/0012 ,  H01L33/06 ,  H01L33/325 ,  H01L33/508 ,  H01L33/60

    Abstract: In some embodiments, a semiconductor structure includes a first conductivity type region comprising a first superlattice, and an i-type active region adjacent to the first conductivity type region comprising an i-type superlattice. The first conductivity type region can be a p-type region or an n-type region. The first superlattice can be comprised of a plurality of first unit cells comprising a first set of single crystal layers, and the i-type superlattice can be comprised of a plurality of i-type unit cells comprising a second set of single crystal layers. An average alloy content of the plurality of the first unit cells and the i-type unit cells can be constant along a growth direction. The structure can be configured such that electrons and holes recombine to generate a spectrum of light with a longest wavelength peak that corresponds to a transition between electron and hole confined energy states within the i-type superlattice.

    SEMICONDUCTOR LIGHT SOURCE AND DRIVING CIRCUIT THEREOF
    4.
    发明公开
    SEMICONDUCTOR LIGHT SOURCE AND DRIVING CIRCUIT THEREOF 审中-公开

    公开(公告)号：US20230307582A1

    公开(公告)日：2023-09-28

    申请号：US18020654

    申请日：2021-10-14

    Applicant: VERTILITE CO., LTD.

    Inventor： Dong LIANG ,  Cheng ZHANG

    IPC: H01L33/38 ,  H01S5/40 ,  H01L33/10 ,  H01L33/00

    CPC classification number: H01L33/382 ,  H01S5/4031 ,  H01L33/105 ,  H01L33/0041 ,  H01L33/0012 ,  H01S5/183

    Abstract: Provided are a semiconductor light source and a driver circuit thereof. The semiconductor light source includes an active layer, a first semiconductor layer, a second semiconductor layer, a first electrode, a second electrode, and a third electrode. The first semiconductor layer and the second semiconductor layer are located on two opposite sides of the active layer. The first electrode is in ohmic contact with the first semiconductor layer. The third electrode is in ohmic contact with the second semiconductor layer. A first dielectric layer is disposed between the first electrode and the second electrode. The first semiconductor layer is a p-type semiconductor layer, and the second semiconductor layer is an n-type semiconductor layer. Alternatively, the first semiconductor layer is an n-type semiconductor layer, and the second semiconductor layer is a p-type semiconductor layer.

    LIGHT-EMITTING DEVICES
    6.
    发明申请
    LIGHT-EMITTING DEVICES 审中-公开

    公开(公告)号：US20190237624A1

    公开(公告)日：2019-08-01

    申请号：US16382873

    申请日：2019-04-12

    Applicant: EPISTAR CORPORATION

    Inventor： Chao-Hsing CHEN ,  Yu-Chen YANG ,  Li-Ping JOU ,  Hui-Chun YEH ,  Yi-Wen KU

    IPC: H01L33/38 ,  H01L33/60 ,  H01L33/46 ,  H01L33/62 ,  H01L33/30 ,  H01L33/08 ,  H01L33/20

    CPC classification number: H01L33/38 ,  H01L33/0012 ,  H01L33/08 ,  H01L33/20 ,  H01L33/30 ,  H01L33/382 ,  H01L33/44 ,  H01L33/46 ,  H01L33/60 ,  H01L33/62

    Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of beveled trenches formed in the semiconductor layer sequence; a plurality of protruding structures respectively formed in the plurality of beveled trenches; a dielectric layer formed on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches; a reflecting layer interposed between the semiconductor layer sequence and the dielectric layer; and a metal layer formed along the inner sidewall of the plurality of beveled trenches, wherein the dielectric layer, the reflecting layer and the metal layer are overlapping, the plurality of protruding structures and the reflecting layer are not overlapping.

    Light emitting device and projector
    9.
    发明授权
    Light emitting device and projector 有权

    公开(公告)号：US09653641B2

    公开(公告)日：2017-05-16

    申请号：US14757410

    申请日：2015-12-23

    Applicant: Seiko Epson Corporation

    Inventor： Hiroki Nishioka

    IPC: H01L33/00 ,  G03B21/20 ,  G03B21/00 ,  H01L33/10 ,  H01L33/14 ,  H01L33/36

    CPC classification number: H01L33/0045 ,  G03B21/005 ,  G03B21/2033 ,  H01L33/0012 ,  H01L33/10 ,  H01L33/14 ,  H01L33/36

    Abstract: In a light emitting device, a light waveguide is provided with a first region including a central position, a second region including a first light emission surface, and a third region including a second light emission surface. A second cladding layer includes a plurality of noncontact regions. The plurality of noncontact regions intersect the light waveguide. A ratio of an area in which the plurality of noncontact regions overlap the first region to an area of the first region is greater than a ratio of an area in which the plurality of noncontact regions overlap the second region to an area of the second region, and is greater than a ratio of an area in which the plurality of noncontact regions overlap the third region to an area of the third region.

    Avalanche photodiode with low breakdown voltage
    10.
    发明授权
    Avalanche photodiode with low breakdown voltage 有权

    公开(公告)号：US09614119B2

    公开(公告)日：2017-04-04

    申请号：US13976379

    申请日：2011-12-29

    Applicant: Yimin Kang ,  Han-Din Liu

    Inventor： Yimin Kang ,  Han-Din Liu

    IPC: H01L31/107 ,  H01L33/00 ,  H01L31/0352

    CPC classification number: H01L33/0012 ,  H01L31/035272 ,  H01L31/1075

    Abstract: An Si/Ge SACM avalanche photo-diodes (APD) having low breakdown voltage characteristics includes an absorption region and a multiplication region having various layers of particular thicknesses and doping concentrations. An optical waveguide can guide infrared and/or optical signals or energy into the absorption region. The resulting photo-generated carriers are swept into the i-Si layer and/or multiplication region for avalanche multiplication. The APD has a breakdown bias voltage of well less than 12 V and an operating bandwidth of greater than 10 GHz, and is therefore suitable for use in consumer electronic devices, high speed communication networks, and the like.

Patent Agency Ranking