公开(公告)号：US06396671B1

公开(公告)日：2002-05-28

申请号：US09525670

申请日：2000-03-15

申请人： Cheng T. Horng ,  Mao-Min Chen ,  Kochan Ju ,  Min Li ,  Simon H. Liao ,  Ku-Ying Tong

发明人： Cheng T. Horng ,  Mao-Min Chen ,  Kochan Ju ,  Min Li ,  Simon H. Liao ,  Ku-Ying Tong

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3143 ,  G11B5/3903 ,  H01F10/3268 ,  H01F10/3295 ,  H01F41/325 ,  Y10T29/49044

摘要： A spin valve structure, and method for manufacturing it, are described. The valve is subject to only small bias point shifts by sense current fields while at the same time has good GMR characteristics. This is achieved by introducing a layer of about 15 Angstroms of ruthenium between the seed layer and the free layer. This acts as an effective bias control layer with the added benefit of providing interfaces (to both the seed and the free layer) that are highly favorable to specular reflection of the conduction electrons. The HCP crystal structure of this ruthenium layer also improves the crystalline quality of the free layer thereby improving its performance with respect to the GMR ratio.

摘要翻译： 自旋阀结构及其制造方法。 阀门只能通过感应电流场进行小的偏移点偏移，同时具有良好的GMR特性。 这通过在种子层和自由层之间引入约15埃的钌层来实现。 这充当有效的偏置控制层，具有提供对传导电子的镜面反射非常有利的界面（对种子和自由层）的附加益处。 该钌层的HCP晶体结构也改善了自由层的结晶质量，从而提高了其相对于GMR比的性能。