公开(公告)号：US06358761B1

公开(公告)日：2002-03-19

申请号：US09396521

申请日：1999-09-15

Applicant: Hui-Ju Yoo ,  Szu-An Wu ,  Cheng-Kun Lin ,  Shiow-Jye Jenq

Inventor： Hui-Ju Yoo ,  Szu-An Wu ,  Cheng-Kun Lin ,  Shiow-Jye Jenq

IPC: H01L21265

CPC classification number: G01N27/041

Abstract: A method and means for detection of oxidizing contamination in acid etching baths employed to etch silicon oxide layers from silicon substrates employed in silicon integrated circuit microelectronics fabrications. There is provided a silicon substrate having within a doped region formed employing ion implantation. The silicon substrate is immersed within a buffered oxide etch (BOE) acid bath, wherein the presence of an oxidizing contaminant correlates with an increase in the resistance of the doped region upon the removal of any silicon oxide layer on the silicon surface.

Abstract translation: 用于检测酸蚀刻液中的氧化污染物的方法和装置，其用于从用于硅集成电路微电子学制造的硅衬底上蚀刻氧化硅层。 提供了在采用离子注入形成的掺杂区域内的硅衬底。 将硅衬底浸入缓冲氧化物蚀刻（BOE）酸浴中，其中氧化污染物的存在与去除硅表面上的任何氧化硅层时的掺杂区域的电阻的增加相关。

公开(公告)号：US6060374A

公开(公告)日：2000-05-09

申请号：US090614

申请日：1998-06-04

Applicant: Cheng-Kun Lin ,  Szu-An Wu

Inventor： Cheng-Kun Lin ,  Szu-An Wu

IPC: H01L21/425

CPC classification number: H01L21/26506 ,  H01L21/28211 ,  H01L22/12

Abstract: Measurement of contaminating nitrogen during silicon ion implantation has been achieved by including a silicon wafer as a monitor in the implantation chamber. After silicon ion implantation, the monitor is subjected to a rapid thermal oxidation (about 1,100.degree. C. for one minute) and the thickness of the resulting grown oxide layer is measured. The thinner the oxide layer (relative to an oxide layer grown on pure silicon) the greater the degree of nitrogen contamination. For example, a reduction in oxide thickness of about 30 Angstroms corresponds to a nitrogen dosage of about 10.sup.13 atoms/sq. cm. By measuring total ion dosage during implantation and then subtracting the measured nitrogen dosage, the corrected silicon dosage may also be computed.

Abstract translation: 硅离子注入期间污染氮的测量已经通过将硅晶片作为监测器包括在注入室来实现。 在硅离子注入之后，将监测器进行快速热氧化（约1100℃1分钟），并测量所得生长的氧化物层的厚度。 氧化物层（相对于在纯硅上生长的氧化物层）越薄，氮污染程度越大。 例如，约30埃的氧化物厚度的减小对应于大约1013个原子/平方的氮剂量。 厘米。 通过测量植入期间的总离子剂量，然后减去测量的氮剂量，也可以计算校正的硅剂量。

公开(公告)号：US06942764B1

公开(公告)日：2005-09-13

申请号：US08518705

申请日：1995-08-24

Applicant: Cheng-Kun Lin ,  Chin-Shien Yang ,  Chuan-Huai Chen

Inventor： Cheng-Kun Lin ,  Chin-Shien Yang ,  Chuan-Huai Chen

IPC: C23C14/34 ,  H01L21/00

CPC classification number: H01J37/34 ,  H01J37/3411 ,  H01J37/3438 ,  H01J37/3476

Abstract: Contamination due to deposited particulate matter has been greatly reduced in single wafer sputter-etchers by coating the full interior of the sputtering shield with a layer of an arc-sprayed material such as aluminum, said layer being possessed of a high degree of surface roughness. The method for forming the coating of arc-sprayed aluminum is described and data comparing particulate contaminant count and product yield before and after the adoption of the present invention, are presented.

Abstract translation: 通过用诸如铝的电弧喷涂材料的层涂覆溅射屏蔽的全部内部，单晶片溅射蚀刻器中沉积的颗粒物质的污染已经大大降低，所述层具有高度的表面粗糙度。 介绍了形成电弧喷涂铝涂层的方法，并介绍了本发明采用前后颗粒污染物数量和产品产量的数据。

公开(公告)号：US06436253B1

公开(公告)日：2002-08-20

申请号：US09454655

申请日：1999-12-06

Applicant: Chin-Shien (Tony) Yang ,  Chuan-Huai Chen ,  Cheng-Kun Lin

Inventor： Chin-Shien (Tony) Yang ,  Chuan-Huai Chen ,  Cheng-Kun Lin

IPC: C23C1400

CPC classification number: H01J37/3244 ,  H01J37/34

Abstract: The uniformity of material removal, as well as contamination due to deposited particulate matter, has been reduced in single wafer sputter-etchers by providing an improved gas baffle. Said gas baffle presents a smooth surface to the incoming sputtering gas so that it disperses uniformly throughout the sputtering chamber, thereby avoiding local fluctuations in pressure which, in turn, can lead to local differences in material removal rate as well as to particulate contamination of the surface that is being etched. The design of the baffle is described along with a method for attaching it to the inside of the sputtering shield.

Abstract translation: 通过提供改进的气体挡板，在单晶片溅射蚀刻器中减少了材料去除的均匀性以及由于沉积的颗粒物质引起的污染。 所述气体挡板对进入的溅射气体呈现平滑的表面，使得其均匀地分散在整个溅射室中，从而避免局部的压力波动，这反过来可能导致材料去除速率的局部差异以及 被蚀刻的表面。 描述挡板的设计以及将其附接到溅射屏蔽件的内部的方法。

公开(公告)号：US06342135B1

公开(公告)日：2002-01-29

申请号：US08552245

申请日：1995-11-02

Applicant: Chin-Shien Yang ,  Chuan-Huai Chen ,  Cheng-Kun Lin

Inventor： Chin-Shien Yang ,  Chuan-Huai Chen ,  Cheng-Kun Lin

IPC: C23C1434

CPC classification number: H01J37/3244 ,  H01J37/34 ,  Y10T29/49

Abstract: The uniformity of material removal, as well as contamination due to deposited particulate matter, has been reduced in single wafer sputter-etchers by providing an improved gas baffle. Said gas baffle presents a smooth surface to the incoming sputtering gas so that it disperses uniformly throughout the sputtering chamber, thereby avoiding local fluctuations in pressure which, in turn, can lead to local differences in material removal rate as well as to particulate contamination of the surface that is being etched. The design of the baffle is described along with a method for attaching it to the inside of the sputtering shield.

公开(公告)号：US6030508A

公开(公告)日：2000-02-29

申请号：US83252

申请日：1998-05-20

Applicant: Chin-Shien Yang ,  Chuan-Huai Chen ,  Cheng-Kun Lin

Inventor： Chin-Shien Yang ,  Chuan-Huai Chen ,  Cheng-Kun Lin

IPC: H01J37/32 ,  H01J37/34 ,  C23C14/34

CPC classification number: H01J37/3244 ,  H01J37/34 ,  Y10T29/49

Abstract: The uniformity of material removal, as well as contamination due to deposited particulate matter, has been reduced in single wafer sputter-etchers by providing an improved gas baffle. Said gas baffle presents a smooth surface to the incoming sputtering gas so that it disperses uniformly throughout the sputtering chamber, thereby avoiding local fluctuations in pressure which, in turn, can lead to local differences in material removal rate as well as to particulate contamination of the surface that is being etched. The design of the baffle is described along with a method for attaching it to the inside of the sputtering shield.

Abstract translation: 通过提供改进的气体挡板，在单晶片溅射蚀刻器中减少了材料去除的均匀性以及由于沉积的颗粒物质引起的污染。 所述气体挡板对进入的溅射气体呈现平滑的表面，使得其均匀地分散在整个溅射室中，从而避免局部的压力波动，这反过来可能导致材料去除速率的局部差异以及 被蚀刻的表面。 描述挡板的设计以及将其附接到溅射屏蔽件的内部的方法。