公开(公告)号：US20230021940A1

公开(公告)日：2023-01-26

申请号：US17788138

申请日：2021-09-14

申请人： Chengdu BOE Optoelectronics Technology Co., Ltd. ,  BOE Technology Group Co., Ltd.

发明人： Chao WANG ,  Pan ZHAO ,  Zhiliang JIANG ,  Dianjie HOU ,  Zhenhua ZHANG ,  Chang LIU ,  Zhihong CUI ,  Na ZHANG

IPC分类号： G06F3/041

摘要： The present disclosure provides a touch display device which includes a display panel and a flexible circuit board coupled to the display panel. The flexible circuit board includes a display functional region and a touch functional region, the display functional region is coupled to a control mainboard of the touch display device via a first connector, and the touch functional region is coupled to the control mainboard of the touch display device via a second connector.

公开(公告)号：US20210175320A1

公开(公告)日：2021-06-10

申请号：US17181124

申请日：2021-02-22

申请人： ORDOS YUANSHENG OPTOELECTRONICS CO., LTD. ,  BOE TECHNOLOGY GROUP CO., LTD.

发明人： Liman PENG ,  Qi LIU ,  Dianjie HOU ,  Xueguang HAO ,  Jin YANG ,  Zihua LI ,  Yan WU ,  Guoping ZHANG ,  Haifeng XU ,  Lei WANG ,  Wenxiu LI ,  Jianqiang WANG ,  Fan YANG

IPC分类号： H01L27/32

摘要： The present disclosure discloses an organic light emitting display device. The organic light emitting display device includes a substrate, an initializing voltage input line, a first electrode line, a thin film transistor, and an organic light emitting diode arranged on the substrate. The thin film transistor includes a first electrode, a second electrode and a control electrode, and the first electrode is coupled to the first electrode line, the initializing voltage input line is provided in the same layer and is made of the same material as one of the first electrode, the second electrode and the control electrode of the thin film transistor, and an extension direction of the initializing voltage input line is substantially the same as an extension direction of the first electrode line.

公开(公告)号：US20170294516A1

公开(公告)日：2017-10-12

申请号：US15507878

申请日：2016-03-24

申请人： BOE TECHNOLOGY GROUP CO., LTD.

发明人： Dacheng ZHANG ,  Dianjie HOU ,  Wenchu DONG

IPC分类号： H01L29/16 ,  H01L29/786 ,  H01L29/45 ,  H01L29/51 ,  H01L29/49 ,  H01L29/66 ,  H01L27/12

CPC分类号： H01L29/1606 ,  H01L21/041 ,  H01L21/28 ,  H01L21/34 ,  H01L21/44 ,  H01L27/12 ,  H01L27/1222 ,  H01L29/45 ,  H01L29/49 ,  H01L29/4908 ,  H01L29/51 ,  H01L29/66015 ,  H01L29/66045 ,  H01L29/66742 ,  H01L29/778 ,  H01L29/786 ,  H01L29/78684

摘要： A thin film transistor and a producing method thereof, and an array substrate, which belong to a technical field of the thin film transistor, can solve a problem of poor performance of a conventional thin film transistor. The producing method of the thin film transistor comprises: S1: forming a gate electrode (11) composed of graphene; S2: forming a gate insulating layer (12) composed of oxidized graphene; S3: forming an active region (13) composed of doped oxidized graphene or doped graphene; S4: forming a source electrode (14) and a drain electrode (15) composed of graphene, wherein, the graphene composing the source electrode (14), the drain electrode (15) and the gate electrode (11) is formed by reducing oxidized graphene, and the doped oxidized graphene or doped graphene composing the active region (13) is formed by treating oxidized graphene.