公开(公告)号：US09818859B2

公开(公告)日：2017-11-14

申请号：US13219283

申请日：2011-08-26

申请人： Chi-Chih Chen ,  Kun-Hsuan Tien ,  Ruey-Hsin Liu

发明人： Chi-Chih Chen ,  Kun-Hsuan Tien ,  Ruey-Hsin Liu

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L29/66 ,  H01L29/417 ,  H01L29/423 ,  H01L29/08

CPC分类号： H01L29/7809 ,  H01L29/0878 ,  H01L29/41766 ,  H01L29/41775 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/66734

摘要： A MOSFET includes a semiconductor substrate having a top surface, a body region of a first conductivity type in the semiconductor substrate, and a double diffused drain (DDD) region having a top surface lower than a bottom surface of the body region. The DDD region is of a second conductivity type opposite the first conductivity type. The MOSFET further includes a gate oxide, and a gate electrode separated from the body region by the gate oxide. A portion of the gate oxide and a portion of the gate electrode are below the top surface of the body region.

公开(公告)号：US20130049108A1

公开(公告)日：2013-02-28

申请号：US13219283

申请日：2011-08-26

申请人： Chi-Chih Chen ,  Kun-Hsuan Tien ,  Ruey-Hsin Liu

发明人： Chi-Chih Chen ,  Kun-Hsuan Tien ,  Ruey-Hsin Liu

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7809 ,  H01L29/0878 ,  H01L29/41766 ,  H01L29/41775 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/66734

摘要： A MOSFET includes a semiconductor substrate having a top surface, a body region of a first conductivity type in the semiconductor substrate, and a double diffused drain (DDD) region having a top surface lower than a bottom surface of the body region. The DDD region is of a second conductivity type opposite the first conductivity type. The MOSFET further includes a gate oxide, and a gate electrode separated from the body region by the gate oxide. A portion of the gate oxide and a portion of the gate electrode are below the top surface of the body region.

摘要翻译： MOSFET包括半导体衬底，其具有顶表面，在半导体衬底中具有第一导电类型的主体区域，以及具有比主体区域的底表面低的顶表面的双扩散漏极（DDD）区域。 DDD区域是与第一导电类型相反的第二导电类型。 MOSFET还包括栅极氧化物和通过栅极氧化物与体区分离的栅电极。 栅极氧化物的一部分和栅电极的一部分在身体区域的顶表面下方。