公开(公告)号：USD616005S1

公开(公告)日：2010-05-18

申请号：US29338136

申请日：2009-06-05

申请人： Chiao-Ling Peng ,  Chih-Ming Lai

设计人： Chiao-Ling Peng ,  Chih-Ming Lai

公开(公告)号：USD624105S1

公开(公告)日：2010-09-21

申请号：US29358946

申请日：2010-04-02

申请人： Chiao-Ling Peng ,  Chih-Ming Lai

设计人： Chiao-Ling Peng ,  Chih-Ming Lai

公开(公告)号：USD623675S1

公开(公告)日：2010-09-14

申请号：US29359521

申请日：2010-04-12

申请人： Chiao-Ling Peng ,  Chih-Ming Lai

设计人： Chiao-Ling Peng ,  Chih-Ming Lai

公开(公告)号：US08246200B2

公开(公告)日：2012-08-21

申请号：US12840301

申请日：2010-07-21

申请人： Chih-Ming Lai ,  Tien-Pao Chen ,  Chiao-Ling Peng

发明人： Chih-Ming Lai ,  Tien-Pao Chen ,  Chiao-Ling Peng

IPC分类号： F21V1/00 ,  H05B37/02

CPC分类号： H05B33/0851 ,  F21V5/007 ,  F21V5/02 ,  F21V5/08 ,  F21V7/0083 ,  F21V23/0442 ,  F21Y2105/10 ,  F21Y2115/10 ,  H01L33/54

摘要： An illumination device includes a light source module consisting of a substrate and a plurality of light emitting elements on the substrate in an array and an optical module array consisting of a plurality of optical modules covering the light emitting elements. Each optical module includes a first optical component and a second optical component. A first illumination distribution pattern is generated by light from the light emitting elements and modulated by the first optical components. A second illumination distribution pattern is generated by light from the light emitting elements and modulated by the second optical components. An illumination distribution pattern of the illumination device is superposition of the first illumination distribution pattern and the second illumination distribution pattern.

摘要翻译： 照明装置包括由基板和阵列中的基板上的多个发光元件构成的光源模块和由覆盖发光元件的多个光学模块组成的光学模块阵列。 每个光学模块包括第一光学部件和第二光学部件。 第一照明分布图案由来自发光元件的光产生并被第一光学部件调制。 第二照明分布图案由来自发光元件的光产生并被第二光学部件调制。 照明装置的照明分布图案是第一照明分布图案和第二照明分布图案的叠加。

公开(公告)号：USD612880S1

公开(公告)日：2010-03-30

申请号：US29338137

申请日：2009-06-05

申请人： Chiao-Ling Peng ,  Chih-Ming Lai

设计人： Chiao-Ling Peng ,  Chih-Ming Lai

公开(公告)号：US10096544B2

公开(公告)日：2018-10-09

申请号：US13464055

申请日：2012-05-04

申请人： Chih-Ming Lai ,  Wen-Chun Huang ,  Ru-Gun Liu ,  Pi-Tsung Chen

发明人： Chih-Ming Lai ,  Wen-Chun Huang ,  Ru-Gun Liu ,  Pi-Tsung Chen

IPC分类号： H01L31/00 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L21/768

摘要： The present disclosure provides an interconnect structure for a semiconductor device. The interconnect structure includes a first metal layer that contains a first metal line. The interconnect structure includes a dielectric layer located over the first metal layer. The dielectric layer contains a first sub-via electrically coupled to the first metal line and a second sub-via electrically coupled to the first sub-via. The second sub-via is different from the first sub-via. The interconnect structure includes a second metal layer located over the dielectric layer. The second metal layer contains a second metal line electrically coupled to the second sub-via. No other metal layer is located between the first metal layer and the second metal layer.

公开(公告)号：US08759186B2

公开(公告)日：2014-06-24

申请号：US13354334

申请日：2012-01-20

申请人： Yung-Hui Yeh ,  Chih-Ming Lai

发明人： Yung-Hui Yeh ,  Chih-Ming Lai

IPC分类号： H01L33/08

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/66969

摘要： A method for manufacturing a semiconductor device includes forming a metal oxide semiconductor layer and a first insulating layer on a substrate. A gate is formed on the first insulating layer. The first insulating layer is patterned by using the gate as an etching mask so as to expose the metal oxide semiconductor layer to serve as a source region and a drain region. A dielectric layer is formed on the substrate to cover the gate and the oxide semiconductor layer, where the dielectric layer has at least one of hydrogen group and hydroxyl group. A heating treatment is performed so that the at least one of hydrogen group and hydroxyl group reacts with the source region and the drain region. A source electrode and a drain electrode electrically connected to the source region and the drain region respectively are formed on the dielectric layer.

摘要翻译： 一种制造半导体器件的方法包括在衬底上形成金属氧化物半导体层和第一绝缘层。 在第一绝缘层上形成栅极。 通过使用栅极作为蚀刻掩模来对第一绝缘层进行构图，以使金属氧化物半导体层暴露于源极区和漏极区。 在基板上形成介电层以覆盖栅极和氧化物半导体层，其中电介质层具有氢基和羟基中的至少一个。 进行加热处理，使得氢基和羟基中的至少一个与源极区和漏极区反应。 在电介质层上分别形成与源极区域和漏极区域电连接的源极电极和漏极电极。

公开(公告)号：US08587862B2

公开(公告)日：2013-11-19

申请号：US13218462

申请日：2011-08-26

申请人： Jiun-Wei Liou ,  Jun-Ying Li ,  Chih-Ming Lai ,  Chern-Lin Chen ,  Way-Seen Wang ,  Lung-Han Peng

发明人： Jiun-Wei Liou ,  Jun-Ying Li ,  Chih-Ming Lai ,  Chern-Lin Chen ,  Way-Seen Wang ,  Lung-Han Peng

IPC分类号： G02F1/37 ,  G02F1/35

CPC分类号： G02F1/37 ,  G02F1/3558 ,  G02F1/3775

摘要： A second-harmonic generation nonlinear frequency converter includes a nonlinear optical crystal. The nonlinear optical crystal includes a plurality of sections. The sections connect to each other in sequence, and each section has a phase different from others. Each of the phases includes a positive domain and a negative domain. Each of the sections includes a plurality of quasi-phase-matching structures. The quasi-phase-matching structures connect to each other in sequence and have the same phase in one section.

摘要翻译： 二次谐波发生非线性频率转换器包括非线性光学晶体。 非线性光学晶体包括多个部分。 这些部分依次相互连接，每个部分的阶段与其他部分不同。 每个相包括正域和负域。 每个部分包括多个准相位匹配结构。 准相位匹配结构依次相互连接，在一个部分中具有相同的相位。

公开(公告)号：US20130126859A1

公开(公告)日：2013-05-23

申请号：US13354334

申请日：2012-01-20

申请人： Yung-Hui Yeh ,  Chih-Ming Lai

发明人： Yung-Hui Yeh ,  Chih-Ming Lai

IPC分类号： H01L33/08 ,  H01L33/44

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/66969

摘要： A method for manufacturing a semiconductor device includes forming a metal oxide semiconductor layer and a first insulating layer on a substrate. A gate is formed on the first insulating layer. The first insulating layer is patterned by using the gate as an etching mask so as to expose the metal oxide semiconductor layer to serve as a source region and a drain region. A dielectric layer is formed on the substrate to cover the gate and the oxide semiconductor layer, where the dielectric layer has at least one of hydrogen group and hydroxyl group. A heating treatment is performed so that the at least one of hydrogen group and hydroxyl group reacts with the source region and the drain region. A source electrode and a drain electrode electrically connected to the source region and the drain region respectively are formed on the dielectric layer.

摘要翻译： 一种制造半导体器件的方法包括在衬底上形成金属氧化物半导体层和第一绝缘层。 在第一绝缘层上形成栅极。 通过使用栅极作为蚀刻掩模来对第一绝缘层进行构图，以使金属氧化物半导体层暴露于源极区和漏极区。 在基板上形成介电层以覆盖栅极和氧化物半导体层，其中电介质层具有氢基和羟基中的至少一个。 进行加热处理，使得氢基和羟基中的至少一个与源极区和漏极区反应。 在电介质层上分别形成与源极区域和漏极区域电连接的源极电极和漏极电极。

公开(公告)号：US08350450B2

公开(公告)日：2013-01-08

申请号：US12749472

申请日：2010-03-29

申请人： Chih-Chung Tsao ,  Chih-Ming Lai ,  Yu-Pin Liu

发明人： Chih-Chung Tsao ,  Chih-Ming Lai ,  Yu-Pin Liu

IPC分类号： H01J61/42

CPC分类号： F21V29/004 ,  F21K9/232 ,  F21V29/78 ,  F21Y2107/20 ,  F21Y2115/10

摘要： An LED lamp includes a heat sink including a base having a heat-dissipating face, an LED module including a printed circuit board mounted on the base and a plurality of LEDs disposed on the printed circuit board, and a connecter electrically connecting the LED module to a power supply. The heat sink further includes a plurality of spiral fins protruding outwardly from the heat-dissipating face of the base.

摘要翻译： LED灯包括散热器，该散热器包括具有散热面的基座，包括安装在基座上的印刷电路板的LED模块和布置在印刷电路板上的多个LED，以及将LED模块电连接到 电源。 散热器还包括从基座的散热面向外突出的多个螺旋形翅片。