公开(公告)号：US20050260811A1

公开(公告)日：2005-11-24

申请号：US10851044

申请日：2004-05-20

申请人： Chih-Fu Chang ,  Yen-Hsiu Chen ,  Hung-Jen Lin ,  Ming-Chu King ,  Ching-Hwano Su ,  Chih-Mu Huang ,  Yun Chang

发明人： Chih-Fu Chang ,  Yen-Hsiu Chen ,  Hung-Jen Lin ,  Ming-Chu King ,  Ching-Hwano Su ,  Chih-Mu Huang ,  Yun Chang

IPC分类号： C23C30/00 ,  H01L21/02 ,  H01L21/20 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/4763 ,  H01L21/8242

CPC分类号： H01L21/2855 ,  H01L21/32051 ,  H01L28/60

摘要： A novel, low-temperature metal deposition method which is suitable for depositing a metal film on a substrate, such as in the fabrication of metal-insulator-metal (MIM) capacitors, is disclosed. The method includes depositing a metal film on a substrate using a deposition temperature of less than typically about 270 degrees C. The resulting metal film is characterized by enhanced thickness uniformity and reduced grain agglomeration which otherwise tends to reduce the operational integrity of a capacitor or other device of which the metal film is a part. Furthermore, the metal film is characterized by intrinsic breakdown voltage (Vbd) improvement.

摘要翻译： 公开了一种适用于在金属 - 绝缘体 - 金属（MIM）电容器的制造中在基底上沉积金属膜的新颖的低温金属沉积方法。 该方法包括使用小于一般约270℃的沉积温度在基板上沉积金属膜。所得到的金属膜的特征在于增强的厚度均匀性和减小的晶粒聚集，否则倾向于降低电容器或其它的操作完整性 金属膜是其一部分的装置。 此外，金属膜的特征在于本征击穿电压（V BAT）改善。