公开(公告)号：US20110024804A1

公开(公告)日：2011-02-03

申请号：US12831842

申请日：2010-07-07

申请人： Chih-Hao CHANG ,  Jeff J. XU ,  Chien-Hsun WANG ,  Chih Chieh YEH ,  Chih-Hsiang CHANG

发明人： Chih-Hao CHANG ,  Jeff J. XU ,  Chien-Hsun WANG ,  Chih Chieh YEH ,  Chih-Hsiang CHANG

IPC分类号： H01L29/78 ,  H01L21/20

CPC分类号： H01L29/785 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/18 ,  H01L29/1054 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66575 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/66772 ,  H01L29/66795 ,  H01L29/7848

摘要： A method for producing a SiGe stressor with high Ge concentration is provided. The method includes providing a semiconductor substrate with a source area, a drain area, and a channel in between; depositing the first SiGe film layer on the source area and/or the drain area; performing a low temperature thermal oxidation, e.g., a high water vapor pressure wet oxidation, to form an oxide layer at the top of the first SiGe layer and to form the second SiGe film layer with high Ge percentage at the bottom of the first SiGe film layer without Ge diffusion into the semiconductor substrate; performing a thermal diffusion to form the SiGe stressor from the second SiGe film layer, wherein the SiGe stressor provides uniaxial compressive strain on the channel; and removing the oxide layer. A Si cap layer can be deposited on the first SiGe film layer prior to performing oxidation.

摘要翻译： 提供了具有高Ge浓度的SiGe应激源的制造方法。 该方法包括：提供具有源极区域，漏极区域和沟道之间的半导体衬底; 在源极区域和/或漏极区域上沉积第一SiGe膜层; 进行低温热氧化，例如高水蒸气压湿氧化，以在第一SiGe层的顶部形成氧化物层，并在第一SiGe膜的底部形成具有高Ge百分比的第二SiGe膜层 Ge层扩散到半导体衬底中; 执行热扩散以从第二SiGe膜层形成SiGe应力源，其中SiGe应力源在通道上提供单轴压缩应变; 并除去氧化物层。 在进行氧化之前，可以在第一SiGe膜层上沉积Si覆盖层。

公开(公告)号：US20110175651A1

公开(公告)日：2011-07-21

申请号：US12789424

申请日：2010-05-27

申请人： Chih-Hsiang CHANG ,  Jung-Mao Lin ,  Ching-Yuan Yang

发明人： Chih-Hsiang CHANG ,  Jung-Mao Lin ,  Ching-Yuan Yang

IPC分类号： H03B19/06 ,  H03B19/00

CPC分类号： H03B19/14

摘要： A frequency doubler receiving an in-phase oscillating signal and an inverse oscillating signal and generating an output signal oscillating at a multiplied frequency, accordingly. The frequency doubler has a first transistor, a second transistor, a first inductor and a second inductor. A first terminal of the first transistor and a first terminal of the second transistor are at a common voltage. The frequency doubler receives the in-phase oscillating signal and the inverse oscillating signal via control terminals of the first and second transistors. The first and second inductors couple a second terminal of the first transistor and a second terminal of the second transistor to an output terminal of the frequency doubler, respectively. The first and second inductors may be separate inductance devices or, in another case, be implemented by a symmetric inductor.

摘要翻译： 接收同相振荡信号的倍频器和反相振荡信号，并相应地产生以倍频振荡的输出信号。 倍频器具有第一晶体管，第二晶体管，第一电感器和第二电感器。 第一晶体管的第一端子和第二晶体管的第一端子处于公共电压。 倍频器通过第一和第二晶体管的控制端接收同相振荡信号和反相振荡信号。 第一和第二电感分别将第一晶体管的第二端子和第二晶体管的第二端子耦合到倍频器的输出端子。 第一和第二电感器可以是分离的电感器件，或者在另一种情况下可由对称电感器来实现。

公开(公告)号：US20120301277A1

公开(公告)日：2012-11-29

申请号：US13472977

申请日：2012-05-16

申请人： Chih-Hsiang CHANG ,  Ding-Wei CHIU ,  Shih-Chou CHEN

发明人： Chih-Hsiang CHANG ,  Ding-Wei CHIU ,  Shih-Chou CHEN

IPC分类号： F04D29/66

CPC分类号： F04D29/281 ,  F04D25/0613 ,  F04D29/30

摘要： A fan includes a housing, an impeller and at least one position-limiting mechanism. The housing has an accommodating space for receiving the impeller. The impeller has a hub and a plurality of blades surrounding the hub. The position-limiting mechanism is located between the top of the blade and the inner side of the housing, and disposed on the top of the blade or the inner side of the housing.

摘要翻译： 风扇包括壳体，叶轮和至少一个位置限制机构。 壳体具有容纳叶轮的容置空间。 叶轮具有轮毂和围绕轮毂的多个叶片。 位置限制机构位于叶片的顶部和壳体的内侧之间，并且设置在叶片的顶部或壳体的内侧。