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1.发明授权Pulsed single contact optical beam induced current analysis of integrated circuits 有权脉冲单接触光束感应电流分析集成电路公开(公告)号：US06556029B1
公开(公告)日：2003-04-29
申请号：US09630252
申请日：2000-08-01
IPC分类号： G01R31305
CPC分类号： G01R31/311
摘要： An improved method of performing optical beam induced current imaging of semiconductor junctions. According to the method, a single wired contact to an integrated circuit (for example through use of a conventional conductive probe) is made at a point that makes electrical contact to a first side of a junction to be analyzed. A first line connects the wired contact to an amplifier, and a second line carries return current from the amplifier to a ground connection. A capacitive return connection is then used to couple return current from a second side of the junction to ground. The actual value of capacitance in the return connection is not of fundamental importance in the practice of the invention, but generally larger capacitance values are preferred and allow increased induced current flow. An increase in the optical beam power also results in more induced current being generated. This causes a faster decay and results in a better signal-to-noise ratio at a higher scanning beam rate. With the connections described above to the amplifier and the processing circuitry, a pulsed particle or optical beam is applied to the junction. In response to the pulsed beam, the junction generates a corresponding pulse of induced current. Since the current in response to the pulsed beam has an alternating current component, it passes through the capacitive junction return connection as well as through the single wired contact to the amplifier. The amplifier outputs a magnified replica of the current which is then analyzed by the processing circuit to provide a useful form of data for analysis of the junction.
摘要翻译： 执行半导体结的光束感应电流成像的改进方法。 根据该方法，在与要分析的结的第一侧电接触的点处，形成与集成电路（例如通过使用常规导电探针）的单个有线接触。 第一线将有线触点连接到放大器，第二行将放大器的返回电流传送到接地连接。 然后使用电容性返回连接来将返回电流从接头的第二侧耦合到地。 返回连接中的电容的实际值在本发明的实践中不是至关重要的，但是通常较大的电容值是优选的并且允许增加的感应电流。 光束功率的增加也导致产生更多的感应电流。 这导致更快的衰减并且在更高的扫描光束速率下导致更好的信噪比。 利用上述连接到放大器和处理电路，脉冲粒子或光束被施加到接合点。 响应于脉冲光束，结点产生相应的感应电流脉冲。 由于响应于脉冲光束的电流具有交流分量，所以它通过电容结返回连接以及通过单个有线接触到放大器。 放大器输出电流的放大副本，然后由处理电路分析电流，以提供用于分析结的有用形式的数据。
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2.发明申请Focused ion beam endpoint detection using charge pulse detection electronics 有权使用充电脉冲检测电子学的聚焦离子束端点检测公开(公告)号：US20050012512A1
公开(公告)日：2005-01-20
申请号：US10620546
申请日：2003-07-16
IPC分类号： G01Q30/04 , G01Q40/02 , H01J37/305 , G01R31/305
CPC分类号： H01J37/3056 , H01J2237/30466
摘要： A system and method for detecting a milling endpoint on a semiconductor sample by directing an ion beam from a focused ion beam (FIB) apparatus at the sample and using charge pulse detection electronics (CPDE) components to generate a distribution curve on a histogram display. A preferred configuration of the CPDE components includes a charge preamplifier, a pulse amplifier, a pulse shaper, and a multichannel analyzer (MCA).
摘要翻译： 一种用于通过将来自聚焦离子束（FIB）装置的离子束引导到样品并使用电荷脉冲检测电子（CPDE）分量来在直方图显示上产生分布曲线来检测半导体样品上的研磨端点的系统和方法。 CPDE组件的优选配置包括电荷前置放大器，脉冲放大器，脉冲整形器和多通道分析器（MCA）。
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公开(公告)号：US06911832B2
公开(公告)日：2005-06-28
申请号：US10620546
申请日：2003-07-16
IPC分类号： G01Q30/04 , G01Q40/02 , H01J37/305 , G01R31/305
CPC分类号： H01J37/3056 , H01J2237/30466
摘要： A system and method for detecting a milling endpoint on a semiconductor sample by directing an ion beam from a focused ion beam (FIB) apparatus at the sample and using charge pulse detection electronics (CPDE) components to generate a distribution curve on a histogram display. A preferred configuration of the CPDE components includes a charge preamplifier, a pulse amplifier, a pulse shaper, and a multichannel analyzer (MCA).
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