公开(公告)号：US06759857B2

公开(公告)日：2004-07-06

申请号：US10256408

申请日：2002-09-27

申请人： Sik On Kong ,  Tsui Ping Chu

发明人： Sik On Kong ,  Tsui Ping Chu

IPC分类号： G01R31305

CPC分类号： G01N22/00 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： A new method and apparatus for detecting and measuring the level of metal present on the surface of a substrate is achieved. Energy, in the form of rf or light or microwave energy, is directed at the surface of a wafer, the reflected energy or the energy that passes through the semiconductor substrate is captured and analyzed for energy level and/or frequency content. Based on this analysis conclusions can be drawn regarding presence and type of metal on the surface of the wafer. Furthermore, by inclusion of metal within the resonating circuit of an rf generator changes the frequency of the vibration and therefore detects the presence of metal.

摘要翻译： 实现了用于检测和测量存在于基板表面上的金属的水平的新方法和装置。 以rf或光或微波能量的形式的能量被引导到晶片的表面，捕获并分析穿过半导体衬底的反射能量或能量来分析能级和/或频率内容。 基于该分析，可以得出关于晶片表面上的金属的存在和类型的结论。 此外，通过在rf发生器的谐振电路内包含金属来改变振动的频率，因此检测金属的存在。

公开(公告)号：US06642726B2

公开(公告)日：2003-11-04

申请号：US10000114

申请日：2001-10-30

申请人： Kurt H. Weiner ,  Gaurav Verma ,  Isabella T. Lewis

发明人： Kurt H. Weiner ,  Gaurav Verma ,  Isabella T. Lewis

IPC分类号： G01R31305

CPC分类号： G01R31/307 ,  G01N21/9501

摘要： Disclosed are methods and apparatus for automatically filtering out physical defects from electrical defects that are found during a voltage contrast inspection of a test structure on a semiconductor device.

摘要翻译： 公开了用于在半导体器件上的测试结构的电压对比度检查期间发现的电缺陷自动滤除物理缺陷的方法和装置。

公开(公告)号：US06573736B1

公开(公告)日：2003-06-03

申请号：US10042571

申请日：2002-01-09

申请人： Jeng-Han Lee ,  Su-Chen Lee

发明人： Jeng-Han Lee ,  Su-Chen Lee

IPC分类号： G01R31305

CPC分类号： G01R31/307 ,  H01J37/268 ,  H01J2237/24564 ,  H01J2237/31749

摘要： A new method is provided for identifying Voltage Contrast that is applied for the evaluation of characteristics of deposition of thin layers of semiconductor material. The voltage contrast is enhanced by applying increased electron beam current, provided by either E-beam or ion-beam current, to the point under investigation.

摘要翻译： 提供了一种用于识别用于评估半导体材料薄层沉积特性的电压对比度的新方法。 通过将电子束或离子束电流提供的电子束电流增加到被调查点来增强电压对比度。

公开(公告)号：US06559662B1

公开(公告)日：2003-05-06

申请号：US09722074

申请日：2000-11-27

申请人： Keizo Yamada ,  Yousuke Itagaki ,  Takeo Ushiki ,  Tohru Tsujide

发明人： Keizo Yamada ,  Yousuke Itagaki ,  Takeo Ushiki ,  Tohru Tsujide

IPC分类号： G01R31305

CPC分类号： G01R31/311

摘要： A plurality of measuring positions on a sample are sequentially irradiated with electron beams having identical cross sectional shapes, currents produced in the sample when the individual measuring positions are irradiated with electron beams are measured and the measured currents or physical amounts derived from the measured currents are displayed on a two-dimensional plane as a function of measuring position.

摘要翻译： 在样本上的多个测量位置被顺序地照射具有相同横截面形状的电子束，当用电子束照射各个测量位置时在样品中产生的电流，并且测量的电流或从测量的电流导出的物理量是 作为测量位置的函数在二维平面上显示。

公开(公告)号：US06720779B1

公开(公告)日：2004-04-13

申请号：US10192299

申请日：2002-07-10

申请人： Paul S. Lee

发明人： Paul S. Lee

IPC分类号： G01R31305

CPC分类号： G01R31/305

摘要： One embodiment disclosed relates to a method for electron beam inspection of a semiconductor circuit to identify a defect path using a hyper-extracting field. The method includes scanning the semiconductor circuit with a primary electron beam, applying a hyper-extracting field sufficient to achieve a junction breakdown, detecting intensities of electrons hyper-extracted from the semiconductor circuit during the scanning, and identifying a defect path from the hyper-extracted intensities. Another embodiment disclosed relates to a method that includes identifying both a normally extracting voltage contrast defect and a normally retarding voltage contrast defect by using the hyper-extracting field. Another embodiment disclosed relates to an apparatus for electron beam inspection of a semiconductor circuit to identify a defect path using a hyper-extracting field. Another embodiment disclosed relates to an apparatus for identifying both a normally extracting voltage contrast defect and a normally retarding voltage contrast defect by using the hyper-extracting field.

摘要翻译： 所公开的一个实施例涉及半导体电路的电子束检查方法，以使用超提取场来识别缺陷路径。 该方法包括用一次电子束扫描半导体电路，施加足以实现结击穿的超提取场，检测在扫描过程中从半导体电路超提取的电子的强度，以及识别来自超级 - 提取强度。 所公开的另一实施例涉及一种通过使用超提取场来识别正常提取电压对比缺陷和正常延迟电压对比度缺陷的方法。 所公开的另一实施例涉及用于半导体电路的电子束检查的设备，以使用超提取场来识别缺陷路径。 所公开的另一实施例涉及通过使用超提取场来识别正常提取电压对比度缺陷和正常延迟电压对比度缺陷的装置。

公开(公告)号：US06583634B1

公开(公告)日：2003-06-24

申请号：US09559563

申请日：2000-04-27

申请人： Mari Nozoe ,  Hiroyuki Shinada ,  Kenji Watanabe ,  Keiichi Saiki ,  Aritoshi Sugimoto ,  Hiroshi Morioka ,  Maki Tanaka ,  Hiroshi Miyai

发明人： Mari Nozoe ,  Hiroyuki Shinada ,  Kenji Watanabe ,  Keiichi Saiki ,  Aritoshi Sugimoto ,  Hiroshi Morioka ,  Maki Tanaka ,  Hiroshi Miyai

IPC分类号： G01R31305

CPC分类号： H01J37/28 ,  G01R31/307 ,  G09G3/006 ,  H01J37/265 ,  H01J2237/221 ,  H01J2237/2817 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： In order to obtain optimum irradiation conditions of an electron beam according to the material and structure of a circuit pattern to be inspected and the kind of a failure to be detected and inspect under the optimum conditions without delay of the inspection time, an inspection device for irradiating the electron beam 19 to the sample board 9 which is a sample, detecting generated secondary electrons by the detector 7, storing obtained signals sequentially in the storage, comparing the same pattern stored in the storage by the comparison calculation unit, and extracting a failure by comparing the predetermined threshold value with the comparison signal by the failure decision unit is provided, wherein the optimum value of the irradiation energy is stored in the data base inside the device beforehand according to the structure of a sample and a recommended value of the irradiation energy suited to inspection can be searched for by inputting or selecting the irradiation energy by a user or inputting information regarding the structure of an article to be inspected.

摘要翻译： 为了根据要检查的电路图案的材料和结构获得电子束的最佳照射条件以及在最佳条件下无故障检测的种类和检查时间的延迟，检查装置 将电子束19照射到作为样本的样品板9，由检测器7检测产生的二次电子，将获得的信号顺序地存储在存储器中，比较由比较计算单元存储在存储器中的相同模式，并提取故障 提供了通过故障判定单元将预定阈值与比较信号进行比较，其中根据样本的结构和照射的推荐值，将照射能量的最佳值预先存储在设备内部的数据库中 可以通过使用照射能量的输入或选择来搜索适合于检查的能量 或输入关于被检查物品的结构的信息。

公开(公告)号：US06566897B2

公开(公告)日：2003-05-20

申请号：US10033845

申请日：2001-12-27

申请人： Chiwoei Wayne Lo ,  Kenichi Kanai

发明人： Chiwoei Wayne Lo ,  Kenichi Kanai

IPC分类号： G01R31305

CPC分类号： G01R31/307 ,  H01J2237/2594 ,  H01J2237/2817 ,  Y10S977/849

摘要： Defects in a patterned substrate are detected by inspection with a charged particle beam inspection tool which generates an image of a portion of the patterned substrate and compares the image with a reference in order to identify any defects in the patterned substrate. Parameters of the tool are optimized to improve image uniformity and contrast, particularly voltage contrast. Prior to imaging an area of the substrate, the tool charges an area surrounding the image area to eliminate or reduce the effects caused by asymmetrical charging in the surrounding area. The tool alternates between charging the surrounding area and imaging the image area to produce a plurality of images of the image area, which are then averaged. The result is a highly uniform image with improved contrast for accurate defect detection.

公开(公告)号：US06411111B1

公开(公告)日：2002-06-25

申请号：US09571085

申请日：2000-05-15

申请人： Geng Ying Gao ,  Kevin Weaver

发明人： Geng Ying Gao ,  Kevin Weaver

IPC分类号： G01R31305

CPC分类号： B82Y15/00 ,  G01N23/04 ,  G01R31/306 ,  G01R31/31705

摘要： A testing system comprising an electron beam probe, a photon beam probe, and a device under test (DUT) card holder which is positioned between the electron beam probe and the photon beam probe. A first valve is positioned between the electron beam probe and the DUT. A second valve, located on an opposite side of the DUT from the first valve, is positioned between the photon beam probe and the DUT. The first and second valve operate in cooperation to control the pressure surrounding the DUT card. One embodiment of the invention includes a first test chamber and a second test chamber. The first test chamber includes the area between the first side of the DUT card and the first valve. The second test chamber includes the area between the second side of the DUT card and the second valve. The present invention includes a method for using the test system of the present invention to test both the top and bottom surfaces of a semiconductor device. The method for using the test system manipulates the first valve and the second valve to selectively contain a vacuum pressure throughout the first test chamber and the area surrounding the DUT. The present invention includes a method for preparing an integrated circuit (IC) for testing by the testing system of the present invention. The present invention also includes a DUT card which secures and positions the DUT for testing within the testing system.

摘要翻译： 一种包括电子束探针，光子束探针和被测设备（DUT）卡夹持器的测试系统，其位于电子束探针和光子束探针之间。 第一个阀位于电子束探头和DUT之间。 位于与第一阀相对的DUT的另一个阀位于光子束探头和DUT之间。 第一和第二阀合作控制DUT卡周围的压力。 本发明的一个实施例包括第一测试室和第二测试室。 第一测试室包括DUT卡的第一侧和第一阀之间的区域。 第二测试室包括DUT卡的第二侧和第二阀之间的区域。 本发明包括使用本发明的测试系统来测试半导体器件的顶表面和底表面的方法。 使用测试系统的方法操纵第一阀和第二阀以选择性地包含整个第一测试室和被测物周围的区域的真空压力。 本发明包括一种用于通过本发明的测试系统进行测试的集成电路（IC）的制备方法。 本发明还包括一个DUT卡，用于在测试系统内固定和定位DUT进行测试。

公开(公告)号：US06407559B1

公开(公告)日：2002-06-18

申请号：US09604865

申请日：2000-06-28

申请人： Nicholas F. Pasch

发明人： Nicholas F. Pasch

IPC分类号： G01R31305

CPC分类号： G01R31/307 ,  H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

摘要： An E-beam generator and detector arrangement sends an electron beam through a series of differentially evacuated vacuum chambers of small size to detect faulty circuitry in individual semiconductor devices. The vacuum chambers are open to one end and are sealed by the semiconductor device without contacting the vacuum chambers. A laser generator is operated by a control system with the E-beam generator and detector arrangement to provide a laser beam in a known physical relationship to the electron beam to correct detected faulty circuitry in the semiconductor devices. The E-beam generator and detector arrangement confirms the correction without further handling of the semiconductor device.

摘要翻译： 电子束发生器和检测器装置通过一系列小尺寸的差分真空真空室发送电子束，以检测各个半导体器件中的故障电路。 真空室一端开口，并被半导体器件密封，而不与真空室接触。 激光发生器由具有电子束发生器和检测器装置的控制系统操作，以提供与电子束已知物理关系的激光束，以校正半导体器件中检测到的故障电路。 电子束发生器和检测器装置确认了校正，而无需进一步处理半导体器件。

公开(公告)号：US06744266B2

公开(公告)日：2004-06-01

申请号：US09905609

申请日：2001-07-13

申请人： Amos Dor ,  Maya Radzinski

发明人： Amos Dor ,  Maya Radzinski

IPC分类号： G01R31305

CPC分类号： H01L22/20

摘要： A method and associated apparatus for creating a defect knowledge library containing case study information of wafer defects on semiconductor wafers. The method comprises creating a database entry that contains a case study of a specific defect including defect information that comprises one or more defect images and storing the database entry for subsequent access. The database entries are stored on a server and are accessible by a plurality of clients.

摘要翻译： 一种用于创建包含半导体晶片上的晶片缺陷的案例研究信息的缺陷知识库的方法和相关联的装置。 该方法包括创建数据库条目，该数据库条目包含特定缺陷的案例研究，所述缺陷包括缺陷信息，所述缺陷信息包括一个或多个缺陷图像并存储用于后续访问的数据 数据库条目存储在服务器上，可由多个客户机访问。