公开(公告)号：US20070258637A1

公开(公告)日：2007-11-08

申请号：US11277854

申请日：2006-03-29

Applicant: Chin Yang ,  Chun Huang

Inventor： Chin Yang ,  Chun Huang

IPC: G06K9/00 ,  G03F9/00

CPC classification number: H01L23/544 ,  G03F7/70633 ,  G03F7/70683 ,  H01L2223/5446 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An overlay mark arrangement for reducing the asymmetric profile and an overlay shift during an integrated circuit manufacturing process is disclosed. In one embodiment, the overlay mark arrangement may comprise a first mark, a second mark and a stress releasing means. The first mark is used to indicate the position of a lower layer, the second mark is used to indicate the position of an upper layer; and the stress releasing means is used to release the film stress induced by the upper layer. Unlike the conventional overlay mark arrangements, which will have a severe overlay mark shift due to the film stress, the asymmetric overlay mark profile can be improved by using multiple trenches around the overlay marks according to certain embodiments of the invention disclosed herein.

Abstract translation: 公开了一种用于在集成电路制造过程中减少非对称轮廓和覆盖偏移的覆盖标记装置。 在一个实施例中，覆盖标记布置可以包括第一标记，第二标记和应力释放装置。 第一个标记用于表示下层的位置，第二个标记用于表示上层的位置; 并且应力释放装置用于释放由上层引起的膜应力。 与传统叠加标记布置不同，由于薄膜应力将会产生严重的重叠标记位移，根据本文公开的本发明的某些实施例，通过使用覆盖标记周围的多个沟槽可以改善不对称叠加标记轮廓。

公开(公告)号：US20070246843A1

公开(公告)日：2007-10-25

申请号：US11410424

申请日：2006-04-25

Applicant: Chin Yang ,  Chih Huang

Inventor： Chin Yang ,  Chih Huang

IPC: H01L23/544

CPC classification number: H01L23/544 ,  G03F9/7076 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Pattern registration marks which include: a substrate and an upper material layer disposed above the substrate; an outer trench formed in the upper material layer, the outer trench having an outer trench width; an inner trench formed in the upper material layer, the inner trench having an inner trench width; and a conformal layer disposed in the inner trench and the outer trench, the conformal layer having a conformal layer thickness; wherein the outer trench width is greater than twice the conformal layer thickness, and wherein the inner trench width is less than or equal to twice the conformal layer thickness; and methods of using the same.

Abstract translation: 图案对准标记，其包括：基板和设置在基板上方的上材料层; 形成在所述上部材料层中的外部沟槽，所述外部沟槽具有外部沟槽宽度; 形成在所述上材料层中的内沟槽，所述内沟槽具有内沟槽宽度; 以及设置在所述内沟槽和所述外沟槽中的共形层，所述共形层具有共形层厚度; 其中所述外沟槽宽度大于所述共形层厚度的两倍，并且其中所述内沟槽宽度小于或等于所述共形层厚度的两倍; 及其使用方法。

公开(公告)号：US20070092843A1

公开(公告)日：2007-04-26

申请号：US11255761

申请日：2005-10-21

Applicant: Chin Yang

Inventor： Chin Yang

IPC: G03F7/26

CPC classification number: G03F7/168 ,  G03F1/32 ,  G03F1/36 ,  G03F7/11

Abstract: A method for forming photo patterns on a photoresist layer is disclosed. A photoresist layer is formed over a substrate. The photoresist layer is then treated with a basic compound and is exposed. The photoresist layer can be treated with a basic compound first, and then exposed. The photoresist layer can also be exposed first, and then treated with a basic compound. The basic compound treatment for the photoresist layer can be performed by using a basic compound in the form of liquid or gas, and it can also be performed by forming a basic compound layer over the photoresist layer. The basic compound can be an amine compound. The mask used during an exposure may contain anti-assist feature (AF), and it can also be a half tone phase shift mask (HTPSM). Thus, the method can prevent anti-AF and side lobe from printing out.

Abstract translation: 公开了一种在光致抗蚀剂层上形成光图案的方法。 在衬底上形成光致抗蚀剂层。 然后将光致抗蚀剂层用碱性化合物处理并暴露。 首先用碱性化合物处理光致抗蚀剂层，然后曝光。 光致抗蚀剂层也可以首先曝光，然后用碱性化合物处理。 光致抗蚀剂层的基本复合处理可以通过使用液体或气体形式的碱性化合物进行，并且还可以通过在光致抗蚀剂层上形成碱性化合物层来进行。 碱性化合物可以是胺化合物。 在曝光期间使用的掩模可能包含反辅助功能（AF），也可以是半色调相移屏蔽（HTPSM）。 因此，该方法可以防止反AF和旁瓣打印出来。

公开(公告)号：US20060134565A1

公开(公告)日：2006-06-22

申请号：US11017684

申请日：2004-12-22

Applicant: Chin Yang

Inventor： Chin Yang

IPC: G03F7/20

CPC classification number: G03F7/2022 ,  G03F1/70 ,  G03F7/70283 ,  G03F7/70466 ,  G03F7/70558

Abstract: An improved photolithography method and mask are disclosed. The method exposes a substrate coated with a photosensitive material using a first mask. The photosensitive material after said first exposure includes one or more under-exposed or incompletely exposed portions or one or more portions prone to peeling. The under-exposed or incompletely exposed portions or portions prone to peeling are subjected to a second exposure using a second mask. The second mask includes a pattern for projecting an image on the substrate coated with the photosensitive material. The image corresponds to areas of the photosensitive material that have been under-exposed or incompletely exposed or areas prone to peeling.

公开(公告)号：US20070238260A1

公开(公告)日：2007-10-11

申请号：US11277678

申请日：2006-03-28

Applicant: Chin Yang

Inventor： Chin Yang

IPC: H01L21/76

CPC classification number: H01L21/76224

Abstract: A method for forming a shallow trench isolation (STI) structure is provided. A pad oxide layer and a nitride silicon layer are formed on a provided substrate sequentially. The pad oxide layer, the nitride silicon layer and the substrate are then etched to form a trench. An oxide liner and a nitride liner are formed in the trench. A self-align photo process is implemented and the nitride liner is then etched to expose the oxide liner.

Abstract translation: 提供了形成浅沟槽隔离（STI）结构的方法。 依次在所提供的基板上形成焊盘氧化物层和氮化硅层。 然后对衬垫氧化物层，氮化物硅层和衬底进行蚀刻以形成沟槽。 在沟槽中形成氧化物衬垫和氮化物衬垫。 实现自对准光刻工艺，然后蚀刻氮化物衬垫以暴露氧化物衬垫。

公开(公告)号：US20060040189A1

公开(公告)日：2006-02-23

申请号：US10923462

申请日：2004-08-20

Applicant: Chin Yang

Inventor： Chin Yang

IPC: G03C5/00 ,  G03F1/00

CPC classification number: G03F1/36 ,  Y10T428/24802

Abstract: An oriented assist feature is described that permits transferring a lithographic pattern from a to an integrated circuit. The oriented assist feature does not exhibit a forbidden pitch phenomenon, thereby providing a wide photo process window for a hole pattern.

Abstract translation: 描述了一种定向辅助特征，其允许将光刻图案从一个集成电路传送到集成电路。 定向辅助特征不显示禁止间距现象，从而为孔图案提供宽的照相处理窗口。

公开(公告)号：US20070092844A1

公开(公告)日：2007-04-26

申请号：US11255791

申请日：2005-10-21

Applicant: Chin Yang

Inventor： Chin Yang

IPC: G03F7/20

CPC classification number: G03F7/2022 ,  G03F7/203 ,  G03F7/70466

Abstract: A method for forming photo patterns on a photoresist layer is disclosed. A photoresist layer is formed over a substrate. The photoresist layer has a first photo region and a second photo region. A first exposure is performed to define a through pitch pattern at the first photo region and a second exposure is performed to define a dense pattern at the second photo region. The first exposure is performed by weak off-axis illumination (OAI) or disk illumination mode with a half tone phase shift mask (HTPSM). The second exposure is performed by strong OAI with HTPSM. In another embodiment, the second exposure is performed by disk illumination mode with a Levenson phase shift mask (PSM).

Abstract translation: 公开了一种在光致抗蚀剂层上形成光图案的方法。 在衬底上形成光致抗蚀剂层。 光致抗蚀剂层具有第一照相区域和第二照片区域。 执行第一曝光以在第一照片区域定义直通间距图案，并且执行第二曝光以在第二照片区域限定致密图案。 第一次曝光由弱离子照明（OAI）或具有半色调相移掩模（HTPSM）的光盘照明模式执行。 第二次曝光是由强OAI与HTPSM进行的。 在另一个实施例中，利用莱文森相移掩模（PSM）通过盘照射模式执行第二次曝光。

公开(公告)号：US20050026047A1

公开(公告)日：2005-02-03

申请号：US10633070

申请日：2003-08-01

Applicant: Chin Yang

Inventor： Chin Yang

IPC: G03C5/00 ,  G03F1/14 ,  G03F9/00 ,  G06F17/50

CPC classification number: G03F1/36

Abstract: The present invention discloses a mask for reducing the proximity effect. The mask comprises a plurality of line-shaped features, a plurality of first assist features positioned between the line-shaped features and a plurality of second assist features positioned between the line-shaped feature and the first assist feature. The line-shaped feature corresponds to isolation trenches to be formed on a silicon wafer. The first assist feature is rectangular in shape and has a larger width at the direction perpendicular to the line-shaped features. The width of the second assist feature is smaller than two-fifths of the wavelength but larger than one-fourth of the wavelength of an exposure source. The size of the first assist feature and the second assist feature is so designed to be non-resolvable, while the line-shaped feature is resolvable and transferred to the silicon wafer.

Abstract translation: 本发明公开了一种用于降低邻近效应的掩模。 掩模包括多个线状特征，位于线状特征之间的多个第一辅助特征以及定位在线状特征和第一辅助特征之间的多个第二辅助特征。 线形特征对应于将在硅晶片上形成的隔离沟槽。 第一辅助特征是矩形形状，并且在垂直于线状特征的方向上具有较大的宽度。 第二辅助特征的宽度小于波长的五分之二但大于曝光源的波长的四分之一。 第一辅助特征和第二辅助特征的尺寸被设计成不可分辨的，而线状特征是可分辨的并且被传送到硅晶片。