公开(公告)号：US06890772B2

公开(公告)日：2005-05-10

申请号：US10043734

申请日：2002-01-09

申请人： Chin-Kai Liu ,  Jun-Yean Chiou ,  Pei-Fen Chou ,  Han-Shun Lui

发明人： Chin-Kai Liu ,  Jun-Yean Chiou ,  Pei-Fen Chou ,  Han-Shun Lui

IPC分类号： G01J1/00 ,  G01Q20/00 ,  G01R31/26 ,  G01T1/24 ,  H01L21/66

CPC分类号： H01L22/34 ,  H01L22/14

摘要： A method of forming a SIMS monitor device for determining a doping profile of a semiconductor device structure including providing a plurality of regularly repeating semiconductor structures including a doping profile to form a monitor device including at least one layer of the regularly repeating semiconductor structures; planarizing the monitor device through a thickness of the regularly repeating semiconductor structures to reveal a target surface overlying the doping profile to form a monitor pattern; and, sputtering the target surface over a sputtering area including the monitor pattern through a thickness thereof while simultaneously detecting and counting over a time interval at least one type of species ejected from the target surface according to a secondary ion mass spectroscopy procedure (SIMS).

摘要翻译： 一种形成用于确定半导体器件结构的掺杂分布的SIMS监视器件的方法，包括提供包括掺杂分布的多个规则重复的半导体结构，以形成包括至少一层规则重复的半导体结构的监测器件; 通过规则重复的半导体结构的厚度来平坦化监视器装置，以显示覆盖掺杂分布的目标表面以形成监视图案; 并且通过其厚度在包括监视器图案的溅射区域上溅射目标表面，同时根据二次离子质谱法（SIMS）从目标表面喷射的至少一种类型的物质同时检测和计数。