公开(公告)号：US07645659B2

公开(公告)日：2010-01-12

申请号：US11289823

申请日：2005-11-30

申请人： Chong-man Yun ,  Kwang-hoon Oh ,  Kyu-hyun Lee ,  Young-chull Kim

发明人： Chong-man Yun ,  Kwang-hoon Oh ,  Kyu-hyun Lee ,  Young-chull Kim

IPC分类号： H01L23/58

CPC分类号： H01L29/7395 ,  H01L29/66333 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided are a power semiconductor device using a silicon substrate as a FS layer and a method of manufacturing the same. A semiconductor substrate of a first conductivity type is prepared. An epitaxial layer is grown on one surface of the semiconductor substrate. Here, the epitaxial layer is doped at a concentration lower than that of the semiconductor substrate and is intended to be used as a drift region. A base region of a second conductivity type is formed in a predetermined region of the epitaxial layer. An emitter region of the first conductivity type is formed in a predetermined region of the base region. A gate electrode with a gate insulating layer is formed on the base region between the emitter region and the drift region of the epitaxial layer. A rear surface of the semiconductor substrate is ground to reduce the thickness of the semiconductor substrate, thereby setting an FS region of the first conductivity type. A collector region of the second conductivity type is formed on the ground surface of the semiconductor substrate of the FS region, thereby forming an FS-IGBT.

摘要翻译： 提供了使用硅衬底作为FS层的功率半导体器件及其制造方法。 制备第一导电类型的半导体衬底。 在半导体衬底的一个表面上生长外延层。 这里，以比半导体衬底低的浓度掺杂外延层，并且旨在用作漂移区域。 在外延层的预定区域中形成第二导电类型的基极区域。 第一导电类型的发射极区域形成在基极区域的预定区域中。 在外延层的发射极区域和漂移区域之间的基极区域上形成具有栅极绝缘层的栅电极。 研磨半导体衬底的后表面以减小半导体衬底的厚度，由此设置第一导电类型的FS区。 在FS区域的半导体衬底的地表面上形成第二导电类型的集电极区域，从而形成FS-IGBT。

公开(公告)号：US20070120215A1

公开(公告)日：2007-05-31

申请号：US11289823

申请日：2005-11-30

申请人： Chong-man Yun ,  Kwang-hoon Oh ,  Kyu-hyun Lee ,  Young-chull Kim

发明人： Chong-man Yun ,  Kwang-hoon Oh ,  Kyu-hyun Lee ,  Young-chull Kim

IPC分类号： H01L23/58

CPC分类号： H01L29/7395 ,  H01L29/66333 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided are a power semiconductor device using a silicon substrate as a FS layer and a method of manufacturing the same. A semiconductor substrate of a first conductivity type is prepared. An epitaxial layer is grown on one surface of the semiconductor substrate. Here, the epitaxial layer is doped at a concentration lower than that of the semiconductor substrate and is intended to be used as a drift region. A base region of a second conductivity type is formed in a predetermined region of the epitaxial layer. An emitter region of the first conductivity type is formed in a predetermined region of the base region. A gate electrode with a gate insulating layer is formed on the base region between the emitter region and the drift region of the epitaxial layer. A rear surface of the semiconductor substrate is ground to reduce the thickness of the semiconductor substrate, thereby setting an FS region of the first conductivity type. A collector region of the second conductivity type is formed on the ground surface of the semiconductor substrate of the FS region, thereby forming an FS-IGBT.

摘要翻译： 提供了使用硅衬底作为FS层的功率半导体器件及其制造方法。 制备第一导电类型的半导体衬底。 在半导体衬底的一个表面上生长外延层。 这里，以比半导体衬底低的浓度掺杂外延层，并且旨在用作漂移区域。 在外延层的预定区域中形成第二导电类型的基极区域。 第一导电类型的发射极区域形成在基极区域的预定区域中。 在外延层的发射极区域和漂移区域之间的基极区域上形成具有栅极绝缘层的栅电极。 研磨半导体衬底的后表面以减小半导体衬底的厚度，由此设置第一导电类型的FS区。 在FS区域的半导体衬底的地表面上形成第二导电类型的集电极区域，从而形成FS-IGBT。