PROCESS FOR POLYMERIZATION OF A DIENE
    1.
    发明申请
    PROCESS FOR POLYMERIZATION OF A DIENE 审中-公开
    二烯的聚合方法

    公开(公告)号:US20130338324A1

    公开(公告)日:2013-12-19

    申请号:US13903546

    申请日:2013-05-28

    IPC分类号: C08F2/06

    摘要: A process for polymerization of a diene is provided. The process comprises: a) reacting the diene with hydrogen peroxide in a hydrophilic organic solvent in the presence of water to obtain a polymerization reaction mixture; b) contacting the polymerization reaction mixture with water having a temperature of from 20 to 80° C. to form a mixture having an organic phase and an aqueous phase; c) removing unreacted gaseous diene from the water mixture obtained in b); d) separating the aqueous phase comprising the hydrophilic solvent from the organic phase of the water mixture; and e) distilling volatile materials from the separated organic phase from d) to obtain the polymerization product; wherein a temperature of the reaction a) is from 50-150° C., a pressure of the reaction a) is from 0 to 50 bar, the unreacted gaseous diene removed in c) is condensed, distilled and the distillate obtained reacted according to a), and the hydrophilic solvent is recovered from the separated aqueous phase and reused according to a). Also provided is an apparatus for conducting the process of the invention.

    摘要翻译: 提供二烯聚合方法。 该方法包括:a)在水存在下使二烯与过氧化氢在亲水性有机溶剂中反应,得到聚合反应混合物; b)使聚合反应混合物与温度为20至80℃的水接触以形成具有有机相和水相的混合物; c)从b)中得到的水混合物中除去未反应的气态二烯; d)将包含亲水溶剂的水相与水混合物的有机相分离; 和e)从分离的有机相中蒸馏挥发性物质,从d)得到聚合产物; 其中反应a)的温度为50-150℃,反应a)的压力为0至50巴,将在c)中除去的未反应的气体二烯冷凝,蒸馏,得到的馏出物根据 a),并且从分离的水相中回收亲水性溶剂,并根据a)重复使用。 还提供了用于进行本发明的方法的装置。

    Wafer Orientation Sensor
    2.
    发明申请
    Wafer Orientation Sensor 有权
    晶圆定向传感器

    公开(公告)号:US20120327428A1

    公开(公告)日:2012-12-27

    申请号:US13169426

    申请日:2011-06-27

    IPC分类号: G01B11/14

    CPC分类号: G01B11/272 H01L21/681

    摘要: A wafer orientation sensor includes a laser source, a laser detector, and an evaluator. The laser source is configured to emit a laser beam in a direction of a wafer in an evaluation region of the wafer orientation sensor so that the laser beam is reflected at a main surface of the wafer resulting in a reflected laser beam. The laser detector is configured to receive the reflected laser beam at least when the wafer is within a tolerance range regarding the orientation of the wafer. The evaluator is configured to receive a beam reception information from the laser detector and to determine an orientation information based on the beam reception information.

    摘要翻译: 晶片方向传感器包括激光源,激光检测器和评估器。 激光源被配置为在晶片定向传感器的评估区域中沿晶片的方向发射激光束,使得激光束在晶片的主表面处反射,从而产生反射的激光束。 激光检测器被配置为至少当晶片处于关于晶片取向的公差范围内时接收反射的激光束。 评估器被配置为从激光检测器接收波束接收信息,并且基于波束接收信息来确定取向信息。

    Wafer orientation sensor
    3.
    发明授权
    Wafer orientation sensor 有权
    晶圆定位传感器

    公开(公告)号:US08614797B2

    公开(公告)日:2013-12-24

    申请号:US13169426

    申请日:2011-06-27

    IPC分类号: G01B11/14

    CPC分类号: G01B11/272 H01L21/681

    摘要: A wafer orientation sensor includes a laser source, a laser detector, and an evaluator. The laser source is configured to emit a laser beam in a direction of a wafer in an evaluation region of the wafer orientation sensor so that the laser beam is reflected at a main surface of the wafer resulting in a reflected laser beam. The laser detector is configured to receive the reflected laser beam at least when the wafer is within a tolerance range regarding the orientation of the wafer. The evaluator is configured to receive a beam reception information from the laser detector and to determine an orientation information based on the beam reception information.

    摘要翻译: 晶片方向传感器包括激光源,激光检测器和评估器。 激光源被配置为在晶片定向传感器的评估区域中沿晶片的方向发射激光束,使得激光束在晶片的主表面处反射,从而产生反射的激光束。 激光检测器被配置为至少当晶片处于关于晶片取向的公差范围内时接收反射的激光束。 评估器被配置为从激光检测器接收波束接收信息,并且基于波束接收信息来确定取向信息。