公开(公告)号：US5738699A

公开(公告)日：1998-04-14

申请号：US706730

申请日：1996-09-06

申请人： Chu Lin Hu ,  Chia Hsing Huang ,  Ching Wen Deng ,  Kuo Cheng Chang

发明人： Chu Lin Hu ,  Chia Hsing Huang ,  Ching Wen Deng ,  Kuo Cheng Chang

IPC分类号： B01D5/00 ,  B01D7/02 ,  B01D47/06

CPC分类号： B01D7/02 ,  B01D47/06 ,  B01D5/0096

摘要： An apparatus for the removal of particles existing in exhaust gases by directly sprinkling the gases with water to congeal the particles. The apparatus also mixes surfactants into the water, and the mixture is driven by a pump to clean out the condensation deposited in a transmitting conduit in order to eliminate settled congealed particles that could block the transmitting conduit.

摘要翻译： 用于通过用水直接喷洒气体以凝结颗粒来除去废气中存在的颗粒的装置。 该设备还将表面活性剂混合到水中，并且混合物由泵驱动以清除沉积在传输导管中的冷凝物，以便消除可能堵塞传输导管的沉降的凝结颗粒。

公开(公告)号：US20130224943A1

公开(公告)日：2013-08-29

申请号：US13484097

申请日：2012-05-30

申请人： Ping-Pang Hsieh ,  Kun-Tsang Chuang ,  Chia Hsing Huang

发明人： Ping-Pang Hsieh ,  Kun-Tsang Chuang ,  Chia Hsing Huang

IPC分类号： H01L21/283

CPC分类号： H01L21/28282 ,  H01L21/02164 ,  H01L21/02205 ,  H01L21/02337 ,  H01L21/28273 ,  H01L29/42324 ,  H01L29/66825 ,  H01L29/66833

摘要： A system and method for manufacturing a memory device is provided. A preferred embodiment comprises manufacturing a flash memory device with a tunneling layer. The tunneling layer is formed by introducing a bonding agent into the dielectric material to bond with and reduce the number of dangling bonds that would otherwise be present. Further embodiments include initiating the formation of the tunneling layer without the bonding agent and then introducing a bonding agent containing precursor and also include a reduced concentration region formed in the tunneling layer adjacent to a substrate.

公开(公告)号：US08980711B2

公开(公告)日：2015-03-17

申请号：US13484097

申请日：2012-05-30

申请人： Ping-Pang Hsieh ,  Kun-Tsang Chuang ,  Chia Hsing Huang

发明人： Ping-Pang Hsieh ,  Kun-Tsang Chuang ,  Chia Hsing Huang

IPC分类号： H01L21/336 ,  H01L21/28 ,  H01L29/423

CPC分类号： H01L21/28282 ,  H01L21/02164 ,  H01L21/02205 ,  H01L21/02337 ,  H01L21/28273 ,  H01L29/42324 ,  H01L29/66825 ,  H01L29/66833

摘要： A system and method for manufacturing a memory device is provided. A preferred embodiment comprises manufacturing a flash memory device with a tunneling layer. The tunneling layer is formed by introducing a bonding agent into the dielectric material to bond with and reduce the number of dangling bonds that would otherwise be present. Further embodiments include initiating the formation of the tunneling layer without the bonding agent and then introducing a bonding agent containing precursor and also include a reduced concentration region formed in the tunneling layer adjacent to a substrate.

摘要翻译： 提供了一种用于制造存储器件的系统和方法。 优选实施例包括制造具有隧道层的闪存器件。 隧道层是通过将粘合剂引入电介质材料中而形成的，以便与另外将存在的悬挂键的键合并减少悬挂键的数量。 另外的实施方案包括开始形成隧道层而不用粘合剂，然后引入含有粘合剂的前体，并且还包括在与衬底相邻的隧穿层中形成的还原浓度区域。