专利检索 ap:("Chuehan Hsieh" OR "Hung-Jen Yang" OR "Min-Lung Huang") AND inv:"Chuehan Hsieh" 第 1 页

1.

发明申请
Semiconductor Device Packages, Redistribution Structures, and Manufacturing Methods Thereof 有权
标题翻译：半导体器件封装，再分配结构及其制造方法

公开(公告)号：US20110018118A1

公开(公告)日：2011-01-27

申请号：US12683421

申请日：2010-01-06

申请人： Chuehan Hsieh , Hung-Jen Yang , Min-Lung Huang

发明人： Chuehan Hsieh , Hung-Jen Yang , Min-Lung Huang

IPC分类号： H01L23/544 , H01L23/495 , H01L21/50

CPC分类号： H01L23/5389 , H01L21/568 , H01L21/6835 , H01L23/3128 , H01L23/544 , H01L24/19 , H01L24/96 , H01L24/97 , H01L2223/5448 , H01L2224/0401 , H01L2224/04105 , H01L2224/12105 , H01L2224/20 , H01L2224/92 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01075 , H01L2924/014 , H01L2924/181 , H01L2224/96 , H01L2224/82 , H01L2924/00

摘要： Described herein are semiconductor device packages and redistribution structures including alignment marks and manufacturing methods thereof.

摘要翻译： 这里描述的是包括对准标记的半导体器件封装和再分配结构及其制造方法。

2.

发明授权
Semiconductor device packages, redistribution structures, and manufacturing methods thereof 有权
标题翻译：半导体器件封装，再分配结构及其制造方法

公开(公告)号：US08358001B2

公开(公告)日：2013-01-22

申请号：US12649265

申请日：2009-12-29

申请人： Hung-Jen Yang , Chuehan Hsieh , Min-Lung Huang

发明人： Hung-Jen Yang , Chuehan Hsieh , Min-Lung Huang

IPC分类号： H01L23/04

CPC分类号： H01L24/96 , H01L21/568 , H01L21/6835 , H01L23/3107 , H01L23/544 , H01L24/19 , H01L24/97 , H01L2223/54426 , H01L2223/54473 , H01L2224/0401 , H01L2224/04105 , H01L2224/12105 , H01L2224/20 , H01L2224/92 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01075 , H01L2924/014 , H01L2924/15311 , H01L2924/181 , H01L2224/96 , H01L2224/82 , H01L2924/00

摘要： Described herein are semiconductor device packages and redistribution structures including alignment marks and manufacturing methods thereof.

摘要翻译： 这里描述的是包括对准标记的半导体器件封装和再分配结构及其制造方法。

3.

发明授权
Semiconductor device package with an alignment mark 有权
标题翻译：具有对准标记的半导体器件封装

公开(公告)号：US08193647B2

公开(公告)日：2012-06-05

申请号：US12683421

申请日：2010-01-06

申请人： Chuehan Hsieh , Hung-Jen Yang , Min-Lung Huang

发明人： Chuehan Hsieh , Hung-Jen Yang , Min-Lung Huang

IPC分类号： H01L23/544 , H01L21/76

CPC分类号： H01L23/5389 , H01L21/568 , H01L21/6835 , H01L23/3128 , H01L23/544 , H01L24/19 , H01L24/96 , H01L24/97 , H01L2223/5448 , H01L2224/0401 , H01L2224/04105 , H01L2224/12105 , H01L2224/20 , H01L2224/92 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01075 , H01L2924/014 , H01L2924/181 , H01L2224/96 , H01L2224/82 , H01L2924/00

摘要： A semiconductor device package includes a semiconductor device, a sealant, a first dielectric layer, an electrically conductive layer, and a second dielectric layer. The semiconductor device includes a contact pad, an active surface, and side surfaces, where the contact pad is disposed adjacent to the active surface. The semiconductor device is formed with a first alignment mark that is disposed adjacent to the active surface. The sealant envelopes the side surfaces of the semiconductor device and exposes the contact pad. The first dielectric layer is disposed adjacent to the sealant and the active surface, and defines a first aperture that exposes the contact pad. The electrically conductive layer is disposed adjacent to the first dielectric layer and is electrically connected to the contact pad through the first aperture. The second dielectric layer is disposed adjacent to the electrically conductive layer.

摘要翻译： 半导体器件封装包括半导体器件，密封剂，第一介电层，导电层和第二介电层。半导体器件包括接触焊盘，有源表面和侧表面，其中接触焊盘邻近有源表面设置。半导体器件形成有与活性表面相邻设置的第一对准标记。密封剂包封半导体器件的侧表面并暴露接触垫。第一电介质层设置成与密封剂和有源表面相邻，并且限定暴露接触焊盘的第一孔。导电层设置成与第一电介质层相邻，并且通过第一孔电连接到接触焊盘。第二电介质层邻近导电层设置。