Abstract:
The present invention provides a method for manufacturing a thin film transistor panel. At first, a gate line is formed on an insulating substrate. A gate insulating layer and a semiconductor layer which comprises an impurity-doped layer are deposited over the gate line sequentially. The semiconductor layer is patterned. A conductive pattern layer with a source electrode, a channel region and a drain electrode is formed over the patterned semiconductor layer. The impurity-doped layer is exposed at the channel region. Then, the impurity-doped layer at the channel region is insulated.
Abstract:
A liquid crystal display device includes a pair of transparent substrates, a liquid crystal layer sandwiched between inner surfaces of the transparent substrates, and a pair of optical films each attached on an outer surface of the transparent substrate via a transparent adhesive layer. The transparent adhesive layer has an outer surface facing the optical film. The outer surface of each transparent substrate has a first Ra surface roughness, and the outer surface of the adhesive layer has a second Ra surface roughness which is smaller than the first Ra surface roughness. The present invention further provides a method for manufacturing the liquid crystal display device.