公开(公告)号：US20130119444A1

公开(公告)日：2013-05-16

申请号：US13296908

申请日：2011-11-15

申请人： Chun-Fai CHENG ,  An-Shen CHANG ,  Hui-Min LIN ,  Tsz-Mei KWOK ,  Hsien-Ching LO

发明人： Chun-Fai CHENG ,  An-Shen CHANG ,  Hui-Min LIN ,  Tsz-Mei KWOK ,  Hsien-Ching LO

IPC分类号： H01L29/772 ,  H01L21/28 ,  H01L21/336

CPC分类号： H01L21/02639 ,  H01L21/02532 ,  H01L21/30604 ,  H01L21/30608 ,  H01L21/3065 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7848

摘要： An integrated circuit device and method for manufacturing the integrated circuit device are disclosed. The disclosed method comprises forming a wedge-shaped recess with an initial bottom surface in the substrate; transforming the wedge-shaped recess into an enlarged recess with a height greater than the height of the wedge-shaped recess; and epitaxially growing a strained material in the enlarged recess.

摘要翻译： 公开了一种用于制造集成电路器件的集成电路器件和方法。 所公开的方法包括在衬底中形成具有初始底表面的楔形凹部; 将楔形凹部转变成具有大于楔形凹部的高度的高度的扩大凹部; 并在扩大的凹部中外延生长应变材料。