公开(公告)号：US5185294A

公开(公告)日：1993-02-09

申请号：US797506

申请日：1991-11-22

申请人： Chung H. Lam ,  Jerome B. Lasky ,  Craig M. Hill ,  James S. Nakos ,  Steven J. Holmes ,  Stephen F. Geissler ,  David K. Lord

发明人： Chung H. Lam ,  Jerome B. Lasky ,  Craig M. Hill ,  James S. Nakos ,  Steven J. Holmes ,  Stephen F. Geissler ,  David K. Lord

IPC分类号： H01L21/28 ,  H01L21/223 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/52 ,  H01L29/43

CPC分类号： H01L21/32134 ,  H01L21/768

摘要： The invention provides a method for electrically connecting a polysilicon-filled trench to a diffusion region in a semiconductor device, wherein the trench and diffusion region are separated by a dielectric. The method provides for formation of a strap or bridge contact by utilizing a diffusion barrier layer which prevents diffusion into an overlying polysilicon layer when a subsequent boron out-diffusion step is performed. Selective etching is then utilized to remove the polysilicon layer where no boron has diffused, leaving a polysilicon strap connecting the trench and diffusion region.

公开(公告)号：US5545583A

公开(公告)日：1996-08-13

申请号：US421115

申请日：1995-04-13

申请人： Chung H. Lam ,  David K. Lord ,  Judith A. Wright

发明人： Chung H. Lam ,  David K. Lord ,  Judith A. Wright

IPC分类号： H01L21/334 ,  H01L21/8242 ,  H01L29/94

CPC分类号： H01L27/10861 ,  H01L29/66181 ,  H01L29/945

摘要： A semiconductor trench capacitor structure having a first level aligned insulation structure and buried strap that extends from within the trench into the semiconductor substrate. The semiconductor trench capacitor structure may be fabricated by forming a shallow trench extending into both the trench capacitor and the semiconductor substrate, depositing and densifying an insulating material within the shallow trench and using a resist layer to define and etch a strap trench aligned with the wall of the shallow trench, depositing a layer of conductive material within the strap trench and followed by depositing an insulating material therein.

摘要翻译： 一种半导体沟槽电容器结构，其具有从沟槽内延伸到半导体衬底中的第一级对准绝缘结构和埋入带。 半导体沟槽电容器结构可以通过形成延伸到沟槽电容器和半导体衬底中的浅沟槽，在浅沟槽内沉积和致密绝缘材料并使用抗蚀剂层来限定和蚀刻与壁对准的带沟槽来制造 的浅沟槽，在带状沟槽内沉积导电材料层，然后在其中沉积绝缘材料。

公开(公告)号：US5770876A

公开(公告)日：1998-06-23

申请号：US748961

申请日：1996-11-13

申请人： Chung Hon Lam ,  David K. Lord ,  Judith A. Wright

发明人： Chung Hon Lam ,  David K. Lord ,  Judith A. Wright

IPC分类号： H01L21/334 ,  H01L21/8242 ,  H01L29/94 ,  H01L27/108

CPC分类号： H01L27/10861 ,  H01L29/66181 ,  H01L29/945

摘要： A semiconductor trench capacitor structure having a first level aligned insulation structure and buried strap that extends from within the trench into the semiconductor substrate. The semiconductor trench capacitor structure may be fabricated by forming a shallow trench extending into both the trench capacitor and the semiconductor substrate, depositing and densifying an insulating material within the shallow trench and using a resist layer to define and etch a strap trench aligned with the wall of the shallow trench, depositing a layer of conductive material within the strap trench and followed by depositing an insulating material therein.

摘要翻译： 一种半导体沟槽电容器结构，其具有从沟槽内延伸到半导体衬底中的第一级对准绝缘结构和埋入带。 半导体沟槽电容器结构可以通过形成延伸到沟槽电容器和半导体衬底中的浅沟槽，在浅沟槽内沉积和致密绝缘材料并使用抗蚀剂层来限定和蚀刻与壁对准的带沟槽来制造 的浅沟槽，在带状沟槽内沉积导电材料层，然后在其中沉积绝缘材料。