公开(公告)号：US09109301B2

公开(公告)日：2015-08-18

申请号：US12637403

申请日：2009-12-14

申请人： Chung-Wen Lan ,  Kimsam Hsieh ,  Wen-Huai Yu ,  Bruce Hsu ,  Ya-Lu Tsai ,  Wen-Ching Hsu ,  Suz-Hua Ho

发明人： Chung-Wen Lan ,  Kimsam Hsieh ,  Wen-Huai Yu ,  Bruce Hsu ,  Ya-Lu Tsai ,  Wen-Ching Hsu ,  Suz-Hua Ho

IPC分类号： C30B11/02 ,  C30B11/14 ,  C30B28/06 ,  C30B29/06

CPC分类号： C30B28/06 ,  C30B29/06

摘要： In a crystalline silicon formation apparatus, a quick cooling method is applied to the bottom of a crucible to control a growth orientation of a polycrystalline silicon grain, such that the crystal grain forms twin boundary, and the twin boundary is a symmetric grain boundary, and the crystal grain is solidified and grown upward in unidirection to form a complete polycrystalline silicon, such that defects or impurities will not form in the polycrystalline silicon easily.

摘要翻译： 在结晶硅形成装置中，将快速冷却方法施加到坩埚的底部，以控制多晶硅晶粒的生长取向，使得晶粒形成双边界，并且双边界是对称晶界，并且 晶粒被固化并单向向上生长以形成完整的多晶硅，使得难以在多晶硅中形成缺陷或杂质。

公开(公告)号：US20070119366A1

公开(公告)日：2007-05-31

申请号：US11508864

申请日：2006-08-24

申请人： C.W. Lan ,  Wen-Ching Hsu ,  Kimsam Hsieh ,  Leif Wang ,  Ya Ho

发明人： C.W. Lan ,  Wen-Ching Hsu ,  Kimsam Hsieh ,  Leif Wang ,  Ya Ho

IPC分类号： C30B7/00 ,  C30B17/00 ,  C30B21/02

CPC分类号： C30B15/22 ,  C30B7/00 ,  C30B29/06 ,  C30B29/40 ,  C30B29/48

摘要： A method and construction of growing wafer ingot by having a thermal shield disposed on an opening of a crucible, an opening approximating a polygonal contour disposed on the thermal shield to control gas current, heat conduction and heat radiation in ingot growth, an isotherm of condensation temperature in ingot growth approaching a polygonal form to grow the ingot into a form approximating the preset sectional form of a polygon for minimizing the material to be cut off in the subsequent process of slicing wafer ingot into chips.

摘要翻译： 通过将坩埚上的热屏蔽设置在坩埚的开口上的近似多边形轮廓的开口，以控制锭生长中的气流，热传导和热辐射，冷凝等温线，生长晶圆锭的方法和结构 晶锭生长中的温度接近多边形，以使锭生长成近似于多边形的预设截面形状的形式，以使在将晶片锭切片成芯片的后续过程中要切断的材料最小化。