公开(公告)号：US20250107162A1

公开(公告)日：2025-03-27

申请号：US18585438

申请日：2024-02-23

Applicant: Cirrus Logic International Semiconductor Ltd.

Inventor： Kuen-Ting SHIU ,  Suman BANERJEE ,  Claude ORTOLLAND ,  Marc L. TARABBIA ,  Caitlin BRANDON ,  Jin TANG

IPC: H01L29/06 ,  H01L21/762 ,  H01L27/02 ,  H01L29/08

Abstract: A semiconductor structure may include a substrate having a surface, an isolation structure formed on the surface, an active region formed on the surface adjacent to the isolation structure, a gate extended over the isolation structure and the active region, and a source region formed within the active region. The source region may include a first subregion formed adjacent to a first portion of the gate and the isolation structure, the first subregion having a first doping and a second subregion formed adjacent to a second portion of the gate, wherein the second subregion has a second doping different from the first doping.