公开(公告)号：US20250107162A1

公开(公告)日：2025-03-27

申请号：US18585438

申请日：2024-02-23

Applicant: Cirrus Logic International Semiconductor Ltd.

Inventor： Kuen-Ting SHIU ,  Suman BANERJEE ,  Claude ORTOLLAND ,  Marc L. TARABBIA ,  Caitlin BRANDON ,  Jin TANG

IPC: H01L29/06 ,  H01L21/762 ,  H01L27/02 ,  H01L29/08

Abstract: A semiconductor structure may include a substrate having a surface, an isolation structure formed on the surface, an active region formed on the surface adjacent to the isolation structure, a gate extended over the isolation structure and the active region, and a source region formed within the active region. The source region may include a first subregion formed adjacent to a first portion of the gate and the isolation structure, the first subregion having a first doping and a second subregion formed adjacent to a second portion of the gate, wherein the second subregion has a second doping different from the first doping.

公开(公告)号：US20250107135A1

公开(公告)日：2025-03-27

申请号：US18434993

申请日：2024-02-07

Applicant: Cirrus Logic International Semiconductor Ltd.

Inventor： Suman BANERJEE ,  Claude ORTOLLAND ,  Marc L. TARABBIA ,  Kuen-Ting SHIU ,  Jin TANG

IPC: H01L29/78 ,  H01L21/8234 ,  H01L27/02 ,  H01L29/06

Abstract: A semiconductor structure may include a substrate, an active region formed on the substrate, a gate region extended over the active region along a first direction parallel to a surface of the substrate, and a source region formed within the active region and adjacent to the gate region in a second direction parallel to the surface and perpendicular to the first direction. The source region may comprise a first subregion and a second subregion such that the second subregion is between the first subregion and the gate region. The first subregion may comprise a first width along the first direction and the second subregion may comprise a second width along the first direction. The first width may be less than the second width.