Hydrothermal Growth of Heterogeneous Single Crystals Exhibiting Amplified Spontaneous Emission Suppression
    2.
    发明申请
    Hydrothermal Growth of Heterogeneous Single Crystals Exhibiting Amplified Spontaneous Emission Suppression 有权
    显示放大自发发射抑制的非均相单晶的水热生长

    公开(公告)号:US20130344277A1

    公开(公告)日:2013-12-26

    申请号:US13923868

    申请日:2013-06-21

    Abstract: Single crystals are described that contain several regimes within the crystal that perform different functions related to the enhanced performance of a laser gain medium. At least one regime of the single crystals can be utilized to suppress amplified spontaneous emission and parasitic oscillation in a laser gain medium. A single crystal can include core and cladding regions, the cladding region providing amplified spontaneous emission suppression. The core region of the crystal can include as dopant one or more ions that take part in the lasing when suitably pumped. The amplified spontaneous emission suppression region can include as dopant one or more ions that can prevent additional spontaneous emission that can to depletion of the upper laser states, thus reducing laser performance including one or more ions that absorb spontaneously emitted photons and/or a higher concentration of the active lasing ions of the core.

    Abstract translation: 描述了在晶体内包含几个与激光增益介质的增强性能有关的功能的晶体。 可以使用单晶的至少一个方案来抑制激光增益介质中的放大的自发发射和寄生振荡。 单晶可以包括芯和包层区域,包层区域提供放大的自发发射抑制。 晶体的核心区域可以包括作为掺杂剂的一个或多个离子,当适当地泵浦时,该离子参与激光。 放大的自发发射抑制区域可以包括作为掺杂剂的一种或多种离子,其可以防止可以消耗上部激光状态的额外的自发发射,从而降低激光性能,包括吸收自发发射的光子的一种或多种离子和/或更高的浓度 的核心的活性激光离子。

    Single Crystals with Internal Doping with Laser Ions Prepared by a Hydrothermal Method
    3.
    发明申请
    Single Crystals with Internal Doping with Laser Ions Prepared by a Hydrothermal Method 有权
    通过水热法制备具有激光离子的内部掺杂的单晶体

    公开(公告)号:US20130343715A1

    公开(公告)日:2013-12-26

    申请号:US13923942

    申请日:2013-06-21

    Abstract: Single heterogeneous crystals are described that contain multiple regimes, adjacent regimes varying from one another with regard to function. Also disclosed is a hydrothermal epitaxial growth process that can be utilized to form the single heterogeneous crystals. The single heterogeneous crystals can exhibit enhanced performance when used as a laser gain medium as compared to previously known single crystals and multi-crystal constructs. The heterogeneous single crystal can be utilized for thin disk lasers and can minimize the thermal distortion effects at high powers. The heterogeneous crystal can also serve as an embedded waveguide.

    Abstract translation: 描述了包含多个方案的单个异质晶体,相邻的方案在功能上彼此不同。 还公开了可用于形成单个非均相晶体的水热外延生长工艺。 与以前已知的单晶和多晶体构造相比,当用作激光增益介质时,单个非晶体晶体可表现出增强的性能。 异质单晶可以用于薄盘激光器,并可以最大限度地减少高功率下的热变形效应。 异质晶体也可以用作嵌入式波导。

    Hydrothermal growth of heterogeneous single crystals exhibiting amplified spontaneous emission suppression
    4.
    发明授权
    Hydrothermal growth of heterogeneous single crystals exhibiting amplified spontaneous emission suppression 有权
    表现出放大的自发发射抑制的异相单晶的水热生长

    公开(公告)号:US09469915B2

    公开(公告)日:2016-10-18

    申请号:US13923868

    申请日:2013-06-21

    Abstract: Single crystals are described that contain several regimes within the crystal that perform different functions related to the enhanced performance of a laser gain medium. At least one regime of the single crystals can be utilized to suppress amplified spontaneous emission and parasitic oscillation in a laser gain medium. A single crystal can include core and cladding regions, the cladding region providing amplified spontaneous emission suppression. The core region of the crystal can include as dopant one or more ions that take part in the lasing when suitably pumped. The amplified spontaneous emission suppression region can include as dopant one or more ions that can prevent additional spontaneous emission that can to depletion of the upper laser states, thus reducing laser performance including one or more ions that absorb spontaneously emitted photons and/or a higher concentration of the active lasing ions of the core.

    Abstract translation: 描述了在晶体内包含几个与激光增益介质的增强性能有关的功能的晶体。 可以使用单晶的至少一个方案来抑制激光增益介质中的放大的自发发射和寄生振荡。 单晶可以包括芯和包层区域,包层区域提供放大的自发发射抑制。 晶体的核心区域可以包括作为掺杂剂的一个或多个离子,当适当地泵浦时,它们参与激光。 放大的自发发射抑制区域可以包括作为掺杂剂的一种或多种离子,其可以防止可以消耗上部激光状态的额外的自发发射,从而降低激光性能,包括吸收自发发射的光子的一种或多种离子和/或更高的浓度 的核心的活性激光离子。

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