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公开(公告)号：US12112976B2
公开(公告)日：2024-10-08
申请号：US17088426
申请日：2020-11-03
申请人： Soitec
发明人： Fabrice Letertre , Oleg Kononchuk
IPC分类号： H01L21/762 , B32B7/12 , B32B9/04 , B32B38/00 , C30B29/68 , C30B33/00 , C30B33/06 , H01L21/02 , H01L21/18 , H01L27/12 , H01L33/00
CPC分类号： H01L21/76251 , B32B7/12 , B32B9/04 , C30B29/68 , C30B33/00 , C30B33/06 , H01L21/02002 , H01L21/185 , H01L27/1203 , B32B2457/14 , H01L33/0093 , Y10T156/1062 , Y10T428/24942
摘要： The invention relates to a method for fabricating a pseudo-substrate comprising the steps of providing a single crystal ingot, providing a handle substrate, cutting a thin slice from the single crystal ingot, and attaching the thin slice to the handle substrate to form a pseudo-substrate. According to the invention, the thickness of the thin slice is substantially equal or inferior to a critical thickness below which the slice, if taken alone, is no longer mechanically stable. The invention further relates to a semiconductor structure.
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2.发明公开公开(公告)号：US20240229292A1
公开(公告)日：2024-07-11
申请号：US18151550
申请日：2023-01-09
发明人： Chang-Beom Eom , Jungwoo Lee , Jieun Kim
摘要： Apparatus and methods for growing films of complex layered metal oxides with high stoichiometries and high crystal qualities are provided. The layered complex metal oxides include two or more metals and oxygen and have a layered structure. The methods, which are referred to as hybrid pulsed laser deposition (hybrid PLD), synergistically combine the advantages of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) to grow complex metal oxide films that include metals with very different vapor pressures.
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公开(公告)号：US11952677B2
公开(公告)日：2024-04-09
申请号：US16926822
申请日：2020-07-13
申请人： Tokuyama Corporation
发明人： Masao Ariyuki
IPC分类号： C30B25/18 , C08J7/06 , C11D7/08 , C11D7/26 , C23C16/02 , C23C16/34 , C30B29/40 , C30B29/68 , C30B33/10 , H01L21/02 , H01L21/3105 , C01B21/072 , C01F7/00 , C11D3/37 , C11D7/06
CPC分类号： C30B25/186 , C08J7/06 , C11D7/08 , C11D7/265 , C23C16/0227 , C23C16/34 , C30B25/18 , C30B29/403 , C30B29/68 , C30B33/10 , H01L21/02024 , H01L21/02052 , H01L21/0206 , H01L21/02096 , H01L21/02178 , H01L21/02271 , H01L21/02389 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02658 , H01L21/31053 , C01B21/072 , C01F7/00 , C08J2329/04 , C08J2367/00 , C08J2377/00 , C08J2379/04 , C11D3/37 , C11D7/06 , C11D2111/22 , C22C2200/00
摘要： A method for effectively removing minute impurities of 1 μm or less in size that are present on a surface of an aluminum nitride single-crystal substrate without etching the surface includes scrubbing a surface of an aluminum nitride single-crystal substrate using a polymer compound material having lower hardness than an aluminum nitride single crystal, and an alkali aqueous solution having 0.01-1 mass % concentration of potassium hydroxide or sodium hydroxide, the alkali aqueous solution being absorbed in the polymer compound material.
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公开(公告)号：US20240093407A1
公开(公告)日：2024-03-21
申请号：US18522460
申请日：2023-11-29
发明人： Fang Liu , Xiaoyang Zhu , James Hone , Sang Hoon Chae
IPC分类号： C30B33/00 , B32B7/02 , B32B18/00 , B32B37/00 , B32B37/18 , B32B43/00 , C23C14/16 , C23C14/30 , C30B29/46 , C30B29/68
CPC分类号： C30B33/00 , B32B7/02 , B32B18/00 , B32B37/025 , B32B37/18 , B32B43/006 , C23C14/16 , C23C14/30 , C30B29/46 , C30B29/68 , B32B2315/02 , C01G41/00
摘要： Systems and methods for generating one or more single crystal monolayers from two-dimensional van der Waals crystals are disclosed herein. Example methods include providing a bulk material including a plurality of van der Waals crystal layers, and exfoliating one or more single crystal monolayers of van der Waals crystal from the bulk material by applying a flexible and flat metal tape to a surface of the bulk material. In certain embodiments, the one or more single crystal monolayers can be assembled into an artificial lattice. The present disclosure also provides techniques for manufacturing flexible and flat metal tape for generating one or more single crystal monolayers from two-dimensional van der Waals crystals. The present disclosure also provides compositions for creating a macroscopic artificial lattice. In certain embodiments, the composition can include two or more macroscopic single crystal monolayers adapted from a bulk van der Waals crystal, where the single crystal monolayers are configured for assembly into an artificial lattice based on one or more properties.
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公开(公告)号：US20240071761A1
公开(公告)日：2024-02-29
申请号：US18356211
申请日：2023-07-20
发明人： Kai Cheng
CPC分类号： H01L21/02639 , C30B25/04 , C30B29/68 , H01L21/0254 , H01L21/02642 , H01L21/02645 , H01L21/02647 , H01L21/02378 , H01L21/02381 , H01L21/0242 , H01L21/02458
摘要： In the present disclosure, a semiconductor structure and a manufacturing method of the semiconductor structure are provided. The semiconductor structure includes a base, a first mask layer, a first epitaxial layer, and a second epitaxial layer. The first mask layer is located on the base, and the first mask layer has a first window that exposes the base. The first window includes an opening end far from the base and a bottom wall end close to the base. On the plane where the base is located, the orthographic projection of the opening end falls within the bottom wall end.
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公开(公告)号：US20240052521A1
公开(公告)日：2024-02-15
申请号：US18492482
申请日：2023-10-23
发明人： Yen Lin LEOW , Xinning LUAN , Hui CHEN , Kirk Allen FISHER , Shawn THOMAS
摘要： Embodiments of the present disclosure generally relate to silicon carbide coated base substrates, silicon carbide substrates thereof, and methods for forming silicon carbide coated base substrates. In some embodiments, a method includes introducing a first silicon-containing precursor to a process chamber at a first temperature of about 800° C. to less than 1,000° C. to form a first silicon carbide layer on a base substrate. The method includes introducing a second silicon-containing precursor, that is the same or different than the first silicon-containing precursor, to the process chamber at a second temperature of about 1,000° C. to about 1,400° C. to form a second silicon carbide layer on the first silicon carbide layer.
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公开(公告)号：US20230352300A1
公开(公告)日：2023-11-02
申请号：US18304067
申请日：2023-04-20
申请人： ASM IP Holding, B.V.
发明人： Jan Deckers
CPC分类号： H01L21/02507 , C30B25/165 , C30B29/06 , C30B29/52 , C30B29/68 , C30B33/12 , H01L21/02444 , H01L21/0245 , H01L21/02513 , H01L21/02527 , H01L21/02532 , H01L21/02598 , H01L21/0262 , H01J37/321
摘要： Methods and systems for forming structures including a superlattice of silicon-containing epitaxial layers using nanoparticles. Exemplary methods can include forming nanoparticles in situ and depositing the nanoparticles onto a substrate surface to thereby form the epitaxial layers.
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公开(公告)号：US11802350B2
公开(公告)日：2023-10-31
申请号：US17146224
申请日：2021-01-11
发明人： Woo Young Shim , Sang jin Choi , Hyesoo Kim
IPC分类号： C30B29/42 , C30B11/00 , C30B29/68 , H01L21/02 , H01L29/06 , H01L29/20 , C01G28/00 , C30B33/08
CPC分类号： C30B29/42 , C01G28/002 , C30B11/003 , C30B29/68 , C30B33/08 , H01L21/02546 , H01L21/02623 , H01L29/0665 , H01L29/20 , C01P2002/02 , C01P2002/72 , C01P2002/76
摘要： The present invention relates to: layered gallium arsenide (GaAs), which is more particularly layered GaAs, which, unlike the conventional bulk GaAs, has a two-dimensional crystal structure, has the ability to be easily exfoliated into nanosheets, and exhibits excellent electrical properties by having a structure that enables easy charge transport in the in-plane direction; a method of preparing the same; and a GaAs nanosheet exfoliated from the same.
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9.发明公开公开(公告)号：US20230223258A1
公开(公告)日：2023-07-13
申请号：US18153282
申请日：2023-01-11
申请人： ASM IP Holding B.V.
发明人： Dieter Pierreux , Kelly Houben , Steven Van Aerde , Wilco Verweij , Bert Jongbloed , Charles Dezelah
CPC分类号： H01L21/0262 , H01L21/02532 , H01L21/02661 , C30B25/165 , C30B29/06 , C30B29/52 , C30B29/68 , C30B25/186
摘要： A method and a wafer processing furnace for forming an epitaxial stack on a plurality of substrates is provided. In a preferred embodiment, the method comprises providing plurality of substrates to a process chamber. A plurality of deposition cycles are executed, thereby forming the epitaxial stack on the plurality of substrates. The epitaxial comprises a plurality of epitaxial pairs, each pair comprising a first epitaxial layer and a second epitaxial layer. The deposition cycle comprises a first deposition pulse and a second deposition pulse. The first deposition pulse comprises a provision of a first reaction gas mixture to the process chamber, thereby forming the first epitaxial layer and the second deposition pulse comprises a provision of a second reaction gas mixture to the process chamber, thereby forming the second epitaxial layer
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公开(公告)号：US11691891B2
公开(公告)日：2023-07-04
申请号：US17110929
申请日：2020-12-03
发明人： Woo-young Shim , Min-jung Kim , Tae-young Kim , Hong Choi , Jong-bum Won , Ji-hong Bae , Sang-jin Choi , Bo-kyeong Kim
CPC分类号： C01G28/002 , C01B21/0602 , C01B25/088 , C01G15/006 , C01G30/002 , C30B29/40 , C30B29/68 , C01P2002/01 , C01P2002/82 , C01P2002/85 , C01P2004/03 , C01P2004/04 , C01P2004/17
摘要： Proposed are a layered Group III-V compound having ferroelectric properties, a Group III-V compound nanosheet that may be prepared using the same, and an electrical device including the materials. Proposed is a layered compound represented by [Formula 1] Mx−mAyBz (M is at least one of Group I or Group II elements, A is at least one of Group III elements, B is at least one of Group V elements, x, y, and z are positive numbers which are determined according to stoichiometric ratios to ensure charge balance when m is 0, and 0
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