公开(公告)号：US06723579B2

公开(公告)日：2004-04-20

申请号：US10194392

申请日：2002-07-12

申请人： Colin Stephen Gormley ,  Stephen Alan Brown ,  Scott Carlton Blackstone

发明人： Colin Stephen Gormley ,  Stephen Alan Brown ,  Scott Carlton Blackstone

IPC分类号： H01L2100

CPC分类号： G02B26/0841 ,  B81B2201/042 ,  B81C1/00357 ,  B81C2201/019

摘要： A semiconductor wafer having a matrix array of micro-mirrors comprises a component substrate carried on a base substrate. The component substrate comprises a membrane layer in which the micro-mirrors are formed and a supporting handle layer. The base substrate comprises a base layer from which a plurality of pedestals extend upwardly therefrom into cavities in the handle layer corresponding to the micro-mirrors. Each pedestal carries electrodes for co-operating with the micro-mirrors for tilting thereof. Conductors through vias in the pedestals connect the electrodes to electrically conductive tracks on a bottom surface, and in turn through conductors through vias to addressing terminals for addressing the electrodes. By forming the pedestals in the base substrate and projecting the pedestals into the cavities in the handle layer the handle layer is recessed into the base substrate thereby facilitating the provision of a handle layer of depth sufficient for adequately supporting the membrane layer during fabrication of the wafer.

摘要翻译： 具有微镜的矩阵阵列的半导体晶片包括承载在基底衬底上的部件衬底。 部件基板包括其中形成有微反射镜的膜层和支撑手柄层。 基底基底包括基底层，多个基座从该基底向上延伸到基部层中，该底座层与对应于微反射镜的手柄层中的空腔中延伸。 每个基座承载用于与微反射镜配合的电极以使其倾斜。 通过基座中的通孔的导体将电极连接到底表面上的导电轨道，并且继而通过导体穿过通孔到用于寻址电极的寻址端子。 通过在基底基板中形成基座并将基座突出到手柄层中的空腔中，手柄层凹陷到基底基底中，从而便于在晶片制造期间提供足以充分支撑膜层的深度的手柄层 。

公开(公告)号：US07045869B2

公开(公告)日：2006-05-16

申请号：US10786426

申请日：2004-02-25

申请人： Colin Stephen Gormley ,  Stephen Alan Brown ,  Scott Carlton Blackstone

发明人： Colin Stephen Gormley ,  Stephen Alan Brown ,  Scott Carlton Blackstone

IPC分类号： H01L27/14

CPC分类号： G02B26/0841 ,  B81B2201/042 ,  B81C1/00357 ,  B81C2201/019

摘要： A semiconductor wafer having a matrix array of micro-mirrors comprises a component substrate carried on a base substrate. The component substrate comprises a membrane layer in which the micro-mirrors are formed and a supporting handle layer. The base substrate comprises a base layer from which a plurality of pedestals extend upwardly therefrom into cavities in the handle layer corresponding to the micro-mirrors. Each pedestal carries electrodes for co-operating with the micro-mirrors for tilting thereof. Conductors through vias in the pedestals connect the electrodes to electrically conductive tracks on a bottom surface, and in turn through conductors through vias to addressing terminals for addressing the electrodes. By forming the pedestals in the base substrate and projecting the pedestals into the cavities in the handle layer the handle layer is recessed into the base substrate thereby facilitating the provision of a handle layer of depth sufficient for adequately supporting the membrane layer during fabrication of the wafer.

摘要翻译： 具有微镜的矩阵阵列的半导体晶片包括承载在基底衬底上的部件衬底。 部件基板包括其中形成微反射镜的膜层和支撑手柄层。 基底基底包括基底层，多个基座从该基底向上延伸到基部层中，该底座层与对应于微反射镜的手柄层中的空腔中延伸。 每个基座承载用于与微反射镜配合的电极以使其倾斜。 通过基座中的通孔的导体将电极连接到底表面上的导电轨道，并且继而通过导体穿过通孔到用于寻址电极的寻址端子。 通过在基底基板中形成基座并将基座突出到手柄层中的空腔中，手柄层凹陷到基底基底中，从而便于在晶片制造期间提供足以充分支撑膜层的深度的手柄层 。

公开(公告)号：US06797591B1

公开(公告)日：2004-09-28

申请号：US09661766

申请日：2000-09-14

申请人： Colin Stephen Gormley ,  Stephen Alan Brown ,  Scott Carlton Blackstone

发明人： Colin Stephen Gormley ,  Stephen Alan Brown ,  Scott Carlton Blackstone

IPC分类号： H01L2146

CPC分类号： H01L21/3213 ,  G02B26/0833 ,  H01L21/311

摘要： A method for forming a multi-layer semiconductor device (1) having a lower silicon layer (4), an intermediate silicon layer (5) within which micro-mirrors (10) are formed and an upper spacer layer (6) of silicon for spacing another component from the micro-mirrors (10). First and second etch stop layers (8,9) of oxide act as insulation between the respective layers (4,5,6). In order to minimize damage to the micro-mirrors (10), the formation of the micro-mirrors (10) is left to the end of the forming process. An assembly of the lower layer (4) and the intermediate layer (5) with the first etch stop layer (8) is formed, and the second etch stop layer (9) is then grown and patterned on the intermediate layer (5) for subsequent formation of the micro-mirrors (10). The upper layer (5) is then bonded by an annealing process to the patterned second etch stop layer (9). After the formation of communicating bores (30) in the lower layer (4) and thinning of the first etch stop layer (8) adjacent the micro-mirrors (10) through the communicating bores (30), openings (16) in the upper layer (6) and the micro-mirrors (10) are sequentially formed by reactive ion etching through the upper layer (6). Portions of the first and second etch stop layers (8,9) adjacent the micro-mirrors (10) are then etched away.

摘要翻译： 一种用于形成具有下硅层（4）的多层半导体器件（1），形成有微镜（10）的中间硅层（5）和用于硅的上间隔层（6）的多层半导体器件（1）的方法， 将另一组件与微反射镜（10）间隔开。 氧化物的第一和第二蚀刻停止层（8,9）用作各层（4,5,6）之间的绝缘体。 为了最小化对微反射镜（10）的损伤，微反射镜（10）的形成留在成型过程的结束。 形成具有第一蚀刻停止层（8）的下层（4）和中间层（5）的组件，然后在中间层（5）上生长并图案化第二蚀刻停止层（9），用于 随后形成微镜（10）。 然后通过退火工艺将上层（5）结合到图案化的第二蚀刻停止层（9）上。 在下层（4）中形成连通孔（30）并且通过连通孔（30）使靠近微反射镜（10）的第一蚀刻停止层（8）变薄，上部的开口（16） 层（6）和微反射镜（10）通过上层（6）的反应离子蚀刻顺序地形成。 然后将与微反射镜（10）相邻的第一和第二蚀刻停止层（8,9）的部分蚀刻掉。