Semiconductor Device Driving Unit
    1.
    发明申请
    Semiconductor Device Driving Unit 有权
    半导体器件驱动单元

    公开(公告)号:US20140077848A1

    公开(公告)日:2014-03-20

    申请号:US14030402

    申请日:2013-09-18

    CPC classification number: H03K17/14 H03K17/163 H03K17/168

    Abstract: A semiconductor device driving unit to supply a drive signal to a gate of a semiconductor switching device, the semiconductor device driving unit comprising: a plurality of gate impedance circuits selectably connectable to the gate of the semiconductor switching device; and a selector to select one or more of the gate impedance circuits to connect to the semiconductor switching device. Also provided is a method of supplying a drive signal to a gate of a semiconductor switching device, the method comprising: selecting one or more of a plurality of gate impedance circuits to be connected to the gate of the semiconductor switching device based on one or more operating conditions and stored data relating to the one or more operating conditions; and connecting the selected one or more of the gate impedance circuits to the semiconductor switching device.

    Abstract translation: 一种半导体器件驱动单元,用于向半导体开关器件的栅极提供驱动信号,所述半导体器件驱动单元包括:可选择地连接到所述半导体开关器件的栅极的多个栅极阻抗电路; 以及选择器,用于选择一个或多个栅极阻抗电路以连接到半导体开关器件。 还提供了一种向半导体开关器件的栅极提供驱动信号的方法,所述方法包括:基于一个或多个选择要连接到半导体开关器件的栅极的多个栅极阻抗电路中的一个或多个 操作条件和与一个或多个操作条件有关的存储数据; 以及将所选择的一个或多个所述栅极阻抗电路连接到所述半导体开关器件。

    Semiconductor device driving unit
    2.
    发明授权
    Semiconductor device driving unit 有权
    半导体器件驱动单元

    公开(公告)号:US08970263B2

    公开(公告)日:2015-03-03

    申请号:US14030402

    申请日:2013-09-18

    CPC classification number: H03K17/14 H03K17/163 H03K17/168

    Abstract: A semiconductor device driving unit to supply a drive signal to a gate of a semiconductor switching device, the semiconductor device driving unit comprising: a plurality of gate impedance circuits selectably connectable to the gate of the semiconductor switching device; and a selector to select one or more of the gate impedance circuits to connect to the semiconductor switching device. Also provided is a method of supplying a drive signal to a gate of a semiconductor switching device, the method comprising: selecting one or more of a plurality of gate impedance circuits to be connected to the gate of the semiconductor switching device based on one or more operating conditions and stored data relating to the one or more operating conditions; and connecting the selected one or more of the gate impedance circuits to the semiconductor switching device.

    Abstract translation: 一种半导体器件驱动单元,用于向半导体开关器件的栅极提供驱动信号,所述半导体器件驱动单元包括:可选择地连接到所述半导体开关器件的栅极的多个栅极阻抗电路; 以及选择器,用于选择一个或多个栅极阻抗电路以连接到半导体开关器件。 还提供了一种向半导体开关器件的栅极提供驱动信号的方法,所述方法包括:基于一个或多个选择要连接到半导体开关器件的栅极的多个栅极阻抗电路中的一个或多个 操作条件和与一个或多个操作条件有关的存储数据; 以及将所选择的一个或多个所述栅极阻抗电路连接到所述半导体开关器件。

    Drive Circuit For Power Transistor
    3.
    发明申请
    Drive Circuit For Power Transistor 审中-公开
    功率晶体管驱动电路

    公开(公告)号:US20140240007A1

    公开(公告)日:2014-08-28

    申请号:US14192022

    申请日:2014-02-27

    Abstract: A turn-on drive circuit for a power transistor comprising a first circuit comprising a resistor and capacitor in parallel and a second circuit comprising a resistor, the second circuit being in series in the drive path with the first circuit. A turn-off drive circuit for a power transistor comprising a first circuit comprising a first resistor and a second resistor in series in the drive path of the power resistor and a second circuit comprising a capacitor in parallel with one of the resistors of the first circuit.

    Abstract translation: 一种用于功率晶体管的导通驱动电路,包括并联的电阻器和电容器的第一电路和包括电阻器的第二电路,所述第二电路与所述第一电路串联在所述驱动路径中。 一种用于功率晶体管的关断驱动电路,包括在功率电阻器的驱动路径中串联的第一电阻器和第二电阻器的第一电路和包括与第一电路的电阻器中的一个并联的电容器的第二电路 。

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