Combination probe and ring head for vertical recording
    1.
    发明授权
    Combination probe and ring head for vertical recording 失效
    组合探头和环形头用于垂直录制

    公开(公告)号:US4897749A

    公开(公告)日:1990-01-30

    申请号:US168820

    申请日:1988-03-16

    IPC分类号: G11B5/127

    CPC分类号: G11B5/1278

    摘要: A vertically recording write probe and read ring head. A ring pole is mounted adjacent a vertical recording probe pole. The ring pole tip is made thin such that it saturates on write and does not affect performance of the probe pole. The ring pole tip is separated from the probe tip by a small read gap. The probe pole and ring pole are connected in a back gap region so that the combination reads like a conventional read head.

    摘要翻译: 垂直记录写入探头和读环形头。 环形极安装在垂直记录探针杆附近。 环形电极尖端薄,使其在写入时饱和,不影响探针杆的性能。 环形极尖与探针尖端分开一个小的读取间隙。 探针杆和环形极连接在后隙区域,使得组合读取像传统读头。

    Bubble memory with enhanced bit density storage area
    2.
    发明授权
    Bubble memory with enhanced bit density storage area 失效
    具有增强位密度存储区域的气泡存储器

    公开(公告)号:US4358830A

    公开(公告)日:1982-11-09

    申请号:US180834

    申请日:1980-08-25

    申请人: Peter K. George

    发明人: Peter K. George

    IPC分类号: G11C19/08

    CPC分类号: G11C19/0875 G11C19/0883

    摘要: A field-access bubble memory chip has a plurality of permalloy elements overlying an insulating layer. The permalloy elements are configured and positioned to define a plurality of paths for propagating magnetic bubbles under the influence of a Z bias magnetic field and a rotating XY magnetic drive field. A first portion of the paths are located in control function areas of the chip and a second portion of the paths are located in a storage area of the chip. The period of the permalloy elements in the control function areas is substantially greater then the period of the permalloy elements in the storage area. The thickness of the insulating layer immediately beneath the permalloy elements is less in the storage area than in the control function areas. This difference in thickness is sufficient so that the propagation margins for magnetic bubbles in the control function areas and in the storage area are substantially equal. Thus the bit density in the storage area can be significantly increased by reducing the period of the elements therein without any net reduction in the overall margin of the chip.

    摘要翻译: 场致电气泡存储器芯片具有覆盖绝缘层的多个坡莫合金元件。 坡莫合金元件被构造和定位以限定在Z偏压磁场和旋转XY磁驱动场的影响下传播磁气泡的多个路径。 路径的第一部分位于芯片的控制功能区域中,并且路径的第二部分位于芯片的存储区域中。 控制功能区域中的坡莫合金元件的周期比存储区域中的坡莫合金元件的周期大得多。 在坡莫合金元件正下方的绝缘层的厚度在存储区域中比在控制功能区域中的厚度小。 该厚度差足够使得控制功能区域和存储区域中的磁性气泡的传播余量基本相等。 因此,通过减少其中的元件的周期,可以显着增加存储区域中的位密度,而没有芯片的整体余量的任何净减少。

    Continuous propagation structures
    3.
    发明授权
    Continuous propagation structures 失效
    连续传播结构

    公开(公告)号:US4264985A

    公开(公告)日:1981-04-28

    申请号:US46146

    申请日:1979-06-06

    IPC分类号: G11C19/08

    摘要: The invention is directed to continuous (gapless) propagation structures for use with magnetic bubble domain devices. The gapless structures are arranged so that magnetic bubbles will propagate therealong without a significant change in size or diameter of the bubble. In addition, the structures are configured so that the bubbles will propagate in a preferred direction without ambiguity.

    摘要翻译: 本发明涉及用于磁性气泡域装置的连续(无间隙)传播结构。 无间隙结构被布置成使得气泡在其上传播而没有气泡尺寸或直径的显着变化。 此外,结构被配置成使得气泡将在优选的方向上传播而不会模糊。

    Enhanced cross-talk suppression in magnetoresistive sensors
    4.
    发明授权
    Enhanced cross-talk suppression in magnetoresistive sensors 失效
    磁阻传感器中增强的串扰抑制

    公开(公告)号:US5475550A

    公开(公告)日:1995-12-12

    申请号:US239270

    申请日:1994-05-06

    申请人: Peter K. George

    发明人: Peter K. George

    IPC分类号: G11B5/39 G11B33/14

    摘要: A magnetoresistive transducer design for cross-talk supression and increased Neel temperature is disclosed. The transducer is formed by fabricating on a suitable substrate an antiferromagnetic material layer above and below the permalloy layer. The additional antiferromagnetic layer between the substrate and the permalloy increases the exchange coupling biasing of the magnetoresistive transducer thereby providing increased cross-talk supression and greater longitudinal bias. The location of the additional antiferromagnetic layer beneath the permalloy also increases the Neel temperature of the transducer. A permanent magnetic material can also be substituted for the antiferromagnetic material with the result that the longitudinal bias is increased by coupling to the upper and lower surfaces of the permalloy layer thereby doubling the effect.

    摘要翻译: 公开了用于串扰抑制和增加的Neel温度的磁阻换能器设计。 换能器通过在合适的衬底上制造坡莫合金层上方和下方的反铁磁材料层而形成。 衬底和坡莫合金之间的附加反铁磁层增加了磁阻换能器的交换耦合偏置,从而提供了增加的串扰抑制和较大的纵向偏置。 坡莫合金下面的附加反铁磁层的位置也增加了传感器的Neel温度。 永久磁性材料也可以代替反铁磁材料,结果是通过与坡莫合金层的上表面和下表面耦合来增加纵向偏压,从而使效果翻倍。

    Magnetoresistive head
    5.
    发明授权
    Magnetoresistive head 失效
    磁阻头

    公开(公告)号:US4535375A

    公开(公告)日:1985-08-13

    申请号:US457830

    申请日:1983-01-14

    IPC分类号: G11B5/39 G11B5/30

    CPC分类号: G11B5/3987

    摘要: A magnetic read head has a first embodiment comprising an elongated magnetoresistive element having a central region and distant ends. The central region has equipotential strips disposed intermediate to its ends, and detection circuitry is electrically connected to these intermediate equipotential strips to sense the changing resistance of the central region in the presence of data magnetically recorded on a medium. In a second embodiment, the magnetoresistive element is folded into a picture frame shape and has its ends joined. The element is vertically arranged so that one of the legs of the element is positioned in proximity to a selected track of a recording medium. A pair of equipotential strips are disposed at opposite ends of the leg to define a sensing region therebetween. Detection circuitry is connected to these equipotential strips to detect the changing resistance of the sensing region in the presence of the magnetic fields of the medium.

    摘要翻译: 磁读头具有第一实施例,其包括具有中心区域和远端的细长磁阻元件。 中央区域具有设置在其端部中间的等电位带,并且检测电路电连接到这些中间等电位带,以便在存在磁性记录在介质上的数据的情况下感测中心区域的变化的电阻。 在第二实施例中,磁阻元件被折叠成相框形状并且其端部接合。 元件被垂直布置,使得元件中的一个腿被定位在接近记录介质的所选轨道附近。 一对等电位条设置在腿的相对端部,以限定它们之间的感测区域。 检测电路连接到这些等电位条,以便在存在介质磁场的情况下检测感测区域的电阻变化。

    Bubble memory having non-uniformly wound Y drive field coil
    6.
    发明授权
    Bubble memory having non-uniformly wound Y drive field coil 失效
    气泡存储器具有不均匀缠绕的Y驱动场线圈

    公开(公告)号:US4308591A

    公开(公告)日:1981-12-29

    申请号:US192064

    申请日:1980-09-29

    IPC分类号: G11C19/08

    CPC分类号: G11C19/085

    摘要: In a field-access magnetic bubble memory X and Y coils encircle the chip for providing the rotating XY magnetic drive field when conventional drive signals are applied thereto. At least one of the coils is non-uniformly wound to provide a first predetermined magnitude of the drive field in first predetermined chip areas and a second lesser predetermined magnitude of the drive field in a second chip area. In the embodiment disclosed the chip has a dual-block replicate architecture with gates and bubble detectors requiring a relatively high drive field located in peripheral edge areas at the bottom and top of the chip. A plurality of data storage loops requiring a relatively low drive field are located in the medial portion of the chip. The outer layer of the Y coil is non-uniformly wound to provide a gap in registration with the medial area of the chip. As a result, the magnitude of the drive field is higher in the peripheral edge areas than in the medial storage area, making possible a reduction in coil power consumption.

    摘要翻译: 在磁场存取磁性气体存储器中,当传统的驱动信号被施加到其上时,X和Y线圈环绕芯片以提供旋转XY磁驱动场。 线圈中的至少一个被非均匀地缠绕以在第一芯片区域中的第一预定芯片区域中提供驱动场的第一预定幅度,并且在第二芯片区域中提供驱动场的第二较小预定幅度。 在所公开的实施例中,芯片具有双块复制架构,其中栅极和气泡检测器需要位于芯片底部和顶部的周边边缘区域中相对较高的驱动电场。 需要较低驱动场的多个数据存储环路位于芯片的中间部分。 Y线圈的外层不均匀地卷绕,以提供与芯片的中间区域对准的间隙。 结果,驱动场的大小在周边边缘区域比在中间存储区域中高,从而可能减少线圈功率消耗。

    Single decoder bubble domain chip organization
    7.
    发明授权
    Single decoder bubble domain chip organization 失效
    单解码器泡泡域芯片组织

    公开(公告)号:US3991411A

    公开(公告)日:1976-11-09

    申请号:US542464

    申请日:1975-01-20

    申请人: Peter K. George

    发明人: Peter K. George

    IPC分类号: G11C11/14 G11C19/08

    CPC分类号: G11C19/0875 G11C19/0858

    摘要: A unique arrangement of magnetic bubble domain devices is utilized to provide an advantageous chip arrangement. One or more storage registers are associated with a controlling path whereby information, for example in the form of magnetic bubbles, is transferred into or out of the storage registers. The controlling path includes replicate/transfer switches for permitting the bubbles to be transferred into or out of the storage register. A generator and an annihilator are provided for producing or destroying magnetic bubble domains. A single decoder is utilized to determine the action to be taken by the controlling path and, thus, the overall operation of the storage register within the chip. A multiple input detector is connected to receive the information from each of the storage registers and to produce a chip output signal. Electrical means are utilized to control the selective operation of the various components of the controlling path.

    摘要翻译: 利用磁泡区域设备的独特布置来提供有利的芯片布置。 一个或多个存储寄存器与控制路径相关联,由此例如以气泡的形式的信息被传送到存储寄存器中或从存储寄存器中传出。 控制路径包括用于允许将气泡传送到存储寄存器或从存储寄存器传出的复制/传送开关。 提供发生器和湮灭器用于产生或破坏磁性气泡域。 利用单个解码器来确定控制路径所采取的动作,从而确定芯片内的存储寄存器的整体操作。 连接多输入检测器以从每个存储寄存器接收信息并产生芯片输出信号。 电气装置用于控制控制路径的各种部件的选择性操作。

    Read sensitivity function for barberpole bias design magnetoresistive
sensor having curved current contacts
    8.
    发明授权
    Read sensitivity function for barberpole bias design magnetoresistive sensor having curved current contacts 失效
    具有弯曲电流触点的barberpole偏置设计磁阻传感器的读灵敏度功能

    公开(公告)号:US5682284A

    公开(公告)日:1997-10-28

    申请号:US483118

    申请日:1995-06-07

    申请人: Peter K. George

    发明人: Peter K. George

    摘要: An improved magnetoresistive head design including a front curved sense contact, a back curved sense contact and a lip extension forming an elliptical sensor region is disclosed. Current flows perpendicularly to the contact edges and intersects the MR element's magnetization vector at 45 degrees. A symmetrical read sensitivity function is the result of constant magnetic flux associated with an elliptical sense region.

    摘要翻译: 公开了一种改进的磁阻头设计,包括前弯曲感测触点,后弯曲感测触点和形成椭圆传感器区域的唇缘延伸。 电流垂直于接触边缘流动,并以45度与MR元件的磁化矢量相交。 对称读灵敏度函数是与椭圆感测区域相关联的恒定磁通量的结果。

    Wafer level test structure for detecting multiple domains and magnetic
instability in a permanent magnet stabilized MR head
    9.
    发明授权
    Wafer level test structure for detecting multiple domains and magnetic instability in a permanent magnet stabilized MR head 失效
    用于检测永磁体稳定MR磁头中的多个磁畴和磁性不稳定性的晶圆级测试结构

    公开(公告)号:US5514953A

    公开(公告)日:1996-05-07

    申请号:US437692

    申请日:1995-05-09

    摘要: A wafer level test structure and method detects multiple magnetic domains and magnetic domain instability in a test magnetic element. The apparatus comprises a first MR sensor designed to be held in a single magnetic domain by shape anisotropy and a second MR sensor having a permanent magnet to hold the element in a single magnetic domain. A circuit connects the first and second MR sensors to detect differences between the changes in resistance between the first and second sensors in the presence of a magnetic field or differences in resistance after the application and release of a magnetic field. The circuit is preferably a balance circuit in which imbalance in the presence of a magnetic field indicates the presence of multiple magnetic domains in at least one of the test sensors. Magnetic domain stability may be tested by applying an external field to disrupt the existing single domain state of the test sensors, and thereafter detecting differences in resistance of the sensors during reversal of the magnetic field.

    摘要翻译: 晶圆级测试结构和方法检测测试磁性元件中的多个磁畴和磁畴不稳定性。 该装置包括被设计为通过形状各向异性保持在单个磁畴中的第一MR传感器和具有永磁体以将元件保持在单个磁畴中的第二MR传感器。 电路连接第一和第二MR传感器,以在存在磁场或施加和释放磁场之后的电阻差时检测第一和第二传感器之间的电阻变化之间的差异。 该电路优选地是其中存在磁场的不平衡指示在至少一个测试传感器中存在多个磁畴的平衡电路。 可以通过施加外部场来破坏测试传感器的现有单域状态,然后在磁场反转期间检测传感器的电阻差异来测试磁畴稳定性。

    Gap tolerant bubble domain propagation circuits
    10.
    发明授权
    Gap tolerant bubble domain propagation circuits 失效
    间隙气泡域传播电路

    公开(公告)号:US4079461A

    公开(公告)日:1978-03-14

    申请号:US709986

    申请日:1976-07-30

    IPC分类号: G11C11/14 G11C19/08 H01F10/00

    摘要: There is disclosed an improved circuit element or structure for use in propagation of magnetic bubble domains. The improved circuit element permits a more desirable gap-to-period ratio than conventional element patterns. The improved circuit element provides portions thereof which are substantially parallel to similar portions of adjacent, similar circuit elements. As a consequence, the magnetic poles developed in the adjacent circuit elements by the application of the in-plane magnetic field are substantially identical at a given time thus facilitating interelement transfer.The circuit element structures are arranged in various propagation paths and operational components. Propagation paths and inter-propagation path elements are described.

    摘要翻译: 公开了一种用于磁泡区域传播的改进的电路元件或结构。 改进的电路元件允许比常规元件图案更期望的间隙与周期比。 改进的电路元件提供其基本平行于相邻类似电路元件的类似部分的部分。 因此,通过施加面内磁场在相邻的电路元件中产生的磁极在给定时间基本相同,从而有助于元件间的传输。