公开(公告)号：US08878209B2

公开(公告)日：2014-11-04

申请号：US14183955

申请日：2014-02-19

Applicant: Cree, Inc.

Inventor： John Adam Edmond ,  David B. Slater, Jr. ,  Jayesh Bharathan ,  Matthew Donofrio

IPC: H01L33/00 ,  H01L33/22 ,  H01L33/44

CPC classification number: H01L33/007 ,  H01L33/22 ,  H01L33/44

Abstract: A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a Group III nitride-based light emitting region including a plurality of Group III nitride-based layers. A lenticular surface directly contacts one of the Group III nitride-based layers of the light emitting region. The lenticular surface includes a transparent material that is different from the Group III nitride-based layer of the light emitting region that the lenticular surface directly contacts.

Abstract translation: 公开了一种高效率III族氮化物发光二极管。 二极管包括包含多个III族氮化物基层的III族氮化物基发光区域。 透镜表面直接接触发光区域的III族氮化物基层之一。 透镜表面包括与透镜面直接接触的发光区域的III族氮化物基层不同的透明材料。

公开(公告)号：US20140167089A1

公开(公告)日：2014-06-19

申请号：US14183955

申请日：2014-02-19

Applicant: Cree, Inc.

Inventor： John Adam Edmond ,  David B. Slater, JR. ,  Jayesh Bharathan ,  Matthew Donofrio

IPC: H01L33/00

CPC classification number: H01L33/007 ,  H01L33/22 ,  H01L33/44

Abstract: A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a Group III nitride-based light emitting region including a plurality of Group III nitride-based layers. A lenticular surface directly contacts one of the Group III nitride-based layers of the light emitting region. The lenticular surface includes a transparent material that is different from the Group III nitride-based layer of the light emitting region that the lenticular surface directly contacts.

Abstract translation: 公开了一种高效率III族氮化物发光二极管。 二极管包括包含多个III族氮化物基层的III族氮化物基发光区域。 透镜表面直接接触发光区域的III族氮化物基层之一。 透镜表面包括与透镜面直接接触的发光区域的III族氮化物基层不同的透明材料。