公开(公告)号：US20140048822A1

公开(公告)日：2014-02-20

申请号：US14067395

申请日：2013-10-30

Applicant: Cree, Inc.

Inventor： David B. Slater, JR. ,  Bradley E. Williams ,  Peter S. Andrews ,  John A. Edmond ,  Scott T. Allen

IPC: H01L33/60 ,  H01L33/32

CPC classification number: H01L33/60 ,  H01L33/20 ,  H01L33/32 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/01057 ,  H01L2924/12041 ,  H01L2924/00

Abstract: Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a current spreading layer, on the epitaxial region. A barrier layer is provided on the current spreading layer and extending on a sidewall of the current spreading layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.

Abstract translation: 诸如发光二极管的半导体发光器件包括衬底，在衬底上的包括诸如发光二极管区域的发光区域的外延区域和包括电流扩展层的多层导电叠层，在外延区域上 。 阻挡层设置在电流扩散层上并在电流扩展层的侧壁上延伸。 多层导电叠层还可以包括在反射器和外延区之间的欧姆层。 阻挡层进一步在欧姆层的侧壁上延伸。 阻挡层还可以延伸到多层导电叠层外的外延区域上。 阻挡层可以制成一系列交替的第一和第二子层。

公开(公告)号：US20140167089A1

公开(公告)日：2014-06-19

申请号：US14183955

申请日：2014-02-19

Applicant: Cree, Inc.

Inventor： John Adam Edmond ,  David B. Slater, JR. ,  Jayesh Bharathan ,  Matthew Donofrio

IPC: H01L33/00

CPC classification number: H01L33/007 ,  H01L33/22 ,  H01L33/44

Abstract: A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a Group III nitride-based light emitting region including a plurality of Group III nitride-based layers. A lenticular surface directly contacts one of the Group III nitride-based layers of the light emitting region. The lenticular surface includes a transparent material that is different from the Group III nitride-based layer of the light emitting region that the lenticular surface directly contacts.

Abstract translation: 公开了一种高效率III族氮化物发光二极管。 二极管包括包含多个III族氮化物基层的III族氮化物基发光区域。 透镜表面直接接触发光区域的III族氮化物基层之一。 透镜表面包括与透镜面直接接触的发光区域的III族氮化物基层不同的透明材料。

公开(公告)号：US20130292639A1

公开(公告)日：2013-11-07

申请号：US13856928

申请日：2013-04-04

Applicant: Cree, Inc.

Inventor： David Todd Emerson ,  Kevin Haberern ,  Michael John Bergmann ,  David B. Slater, JR. ,  Matthew Donofrio ,  John Edmond

IPC: H01L33/14

CPC classification number: H01L33/145 ,  H01L24/05 ,  H01L33/14 ,  H01L33/38 ,  H01L2224/49107 ,  H01L2933/0016

Abstract: A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer and an active region between the p-type semiconductor layer and the n-type semiconductor layer. A bond pad is provided on one of the p-type semiconductor layer or the n-type semiconductor layer, opposite the active region, the bond pad being electrically connected to the one of the p-type semiconductor layer or the n-type semiconductor layer. A conductive finger extends from and is electrically connected to the bond pad. A reduced conductivity region is provided in the light emitting device that is aligned with the conductive finger. A reflector may also be provided between the bond pad and the reduced conductivity region. A reduced conductivity region may also be provided in the light emitting device that is not aligned with the bond pad.

Abstract translation: 发光器件包括p型半导体层，n型半导体层和p型半导体层和n型半导体层之间的有源区。 在与有源区相对的p型半导体层或n型半导体层之一上设置接合焊盘，所述接合焊盘与p型半导体层或n型半导体层中的一者电连接 。 导电指状物从接合焊盘延伸并与其电连接。 在与导电指状物对准的发光器件中设置降低的导电性区域。 还可以在接合焊盘和减小的导电区域之间设置反射器。 还可以在不与接合焊盘对准的发光器件中提供降低的导电性区域。

公开(公告)号：US20160189954A1

公开(公告)日：2016-06-30

申请号：US14587024

申请日：2014-12-31

Applicant: Cree, Inc.

Inventor： Hua-Shuang Kong ,  John A. Edmond ,  Matthew Donofrio ,  Michael J. Bergmann ,  David B. Slater, JR.

IPC: H01L21/02 ,  H01L21/683 ,  H01L21/78

CPC classification number: H01L21/6835 ,  H01L21/78 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6835 ,  H01L2221/68381

Abstract: Semiconductor devices are fabricated by providing a growth substrate having a thickness within a preselected range and then bonding a lower surface of the growth substrate to an upper surface of the carrier substrate to form a composite substrate. One or more semiconductor growth processes are performed at one or more growth temperatures of at least 500° C. to form one or more semiconductor layers on an upper surface of the composite substrate. The growth substrate is separated from the carrier substrate after the one or more semiconductor growth processes are completed so that the carrier substrate may be reused with a second growth substrate.

Abstract translation: 通过提供具有预定范围内的厚度的生长衬底然后将生长衬底的下表面粘合到载体衬底的上表面以形成复合衬底来制造半导体器件。 在至少500℃的一个或多个生长温度下进行一个或多个半导体生长工艺，以在复合衬底的上表面上形成一个或多个半导体层。 在一个或多个半导体生长过程完成之后，将生长衬底与载体衬底分离，使得载体衬底可以与第二生长衬底重复使用。

公开(公告)号：US20160079472A1

公开(公告)日：2016-03-17

申请号：US14486701

申请日：2014-09-15

Applicant: Cree, Inc.

Inventor： Arthur Fong-Yuen Pun ,  David B. Slater, JR.

IPC: H01L33/20 ,  H01L33/62

CPC classification number: H01L33/20 ,  H01L33/62 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: Semiconductor devices and related methods are disclosed. In one aspect, a semiconductor device includes a substrate and an active area disposed over the substrate. The active area includes at least one or more corner region having a non-orthogonal angled edge. A method of providing a semiconductor device is also provided. The method includes providing a substrate and fabricating an active area over the substrate. The active area includes at least one or more corner region with a non-orthogonal angled edge. LED chips and methods herein have a reduced sensitivity to corner cracking, fracturing, or chipping.

Abstract translation: 公开了半导体器件及相关方法。 一方面，半导体器件包括衬底和设置在衬底上的有源区域。 活动区域包括至少一个或多个具有非正交角度边缘的角区域。 还提供了一种提供半导体器件的方法。 该方法包括提供衬底并在衬底上制造有源区。 活动区域包括具有非正交成角度边缘的至少一个或多个角区域。 这里的LED芯片和方法对角裂纹，压裂或碎裂具有降低的敏感性。