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公开(公告)号：US08772161B2
公开(公告)日：2014-07-08
申请号：US13205063
申请日：2011-08-08
IPC分类号： H01L21/44
CPC分类号： H01L29/665 , H01L21/28518 , H01L21/76828 , H01L21/76886 , H01L21/823814 , H01L21/823842 , H01L21/823871 , H01L21/84 , H01L27/1203
摘要： A method for modifying the chemistry or microstructure of silicon-based technology via an annealing process is provided. The method includes depositing a reactive material layer within a selected proximity to an interconnect, igniting the reactive material layer, and annealing the interconnect via heat transferred from the ignited reactive material layer. The method can also be implemented in connection with a silicide/silicon interface as well as a zone of silicon-based technology.
摘要翻译： 提供了一种通过退火工艺改性硅基技术的化学或微结构的方法。 该方法包括将反应性材料层沉积在选定的互连附近，点燃反应性材料层，以及通过从点燃的反应性材料层传递的热量使互连件退火。 该方法还可以结合硅化物/硅界面以及硅基技术的区域来实现。
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公开(公告)号：US20130040454A1
公开(公告)日：2013-02-14
申请号：US13205063
申请日：2011-08-08
IPC分类号： H01L21/28 , H01L21/304 , H01L21/302
CPC分类号： H01L29/665 , H01L21/28518 , H01L21/76828 , H01L21/76886 , H01L21/823814 , H01L21/823842 , H01L21/823871 , H01L21/84 , H01L27/1203
摘要： A method for modifying the chemistry or microstructure of silicon-based technology via an annealing process is provided. The method includes depositing a reactive material layer within a selected proximity to an interconnect, igniting the reactive material layer, and annealing the interconnect via heat transferred from the ignited reactive material layer. The method can also be implemented in connection with a silicide/silicon interface as well as a zone of silicon-based technology.
摘要翻译： 提供了一种通过退火工艺改性硅基技术的化学或微结构的方法。 该方法包括将反应性材料层沉积在选定的互连附近，点燃反应性材料层，以及通过从点燃的反应性材料层传递的热量使互连件退火。 该方法还可以结合硅化物/硅界面以及硅基技术的区域来实现。
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公开(公告)号：US08212218B2
公开(公告)日：2012-07-03
申请号：US12627076
申请日：2009-11-30
申请人： Cyril Cabral, Jr. , Michael S. Gordon , Steven J. Koester , Conal E. Murray , Kenneth P. Rodbell , Stephen M. Rossnagel , Robert L. Wisnieff , Jeng-bang Yau
发明人： Cyril Cabral, Jr. , Michael S. Gordon , Steven J. Koester , Conal E. Murray , Kenneth P. Rodbell , Stephen M. Rossnagel , Robert L. Wisnieff , Jeng-bang Yau
IPC分类号： G01T1/02
CPC分类号： G01T1/026
摘要： A system for determining an amount of radiation includes a dosimeter configured to receive the amount of radiation, the dosimeter comprising a circuit having a resonant frequency, such that the resonant frequency of the circuit changes according to the amount of radiation received by the dosimeter, the dosimeter further configured to absorb RF energy at the resonant frequency of the circuit; a radio frequency (RF) transmitter configured to transmit the RF energy at the resonant frequency to the dosimeter; and a receiver configured to determine the resonant frequency of the dosimeter based on the absorbed RF energy, wherein the amount of radiation is determined based on the resonant frequency.
摘要翻译： 用于确定辐射量的系统包括配置成接收辐射量的剂量计，该剂量计包括具有谐振频率的电路，使得电路的谐振频率根据剂量计接收的辐射量而改变， 剂量计还被配置为吸收电路的谐振频率处的RF能量; 射频（RF）发射器，被配置为以共振频率将所述RF能量传输到所述剂量计; 以及接收器，被配置为基于所吸收的RF能量来确定所述剂量计的谐振频率，其中所述辐射量基于所述谐振频率来确定。
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公开(公告)号：US20110127438A1
公开(公告)日：2011-06-02
申请号：US12627076
申请日：2009-11-30
申请人： Cyril Cabral, JR. , Michael S. Gordon , Steven J. Koester , Conal E. Murray , Kenneth P. Rodbell , Stephen M. Rossnagel , Robert L. Wisnieff , Jeng-bang Yau
发明人： Cyril Cabral, JR. , Michael S. Gordon , Steven J. Koester , Conal E. Murray , Kenneth P. Rodbell , Stephen M. Rossnagel , Robert L. Wisnieff , Jeng-bang Yau
CPC分类号： G01T1/026
摘要： A system for determining an amount of radiation includes a dosimeter configured to receive the amount of radiation, the dosimeter comprising a circuit having a resonant frequency, such that the resonant frequency of the circuit changes according to the amount of radiation received by the dosimeter, the dosimeter further configured to absorb RF energy at the resonant frequency of the circuit; a radio frequency (RF) transmitter configured to transmit the RF energy at the resonant frequency to the dosimeter; and a receiver configured to determine the resonant frequency of the dosimeter based on the absorbed RF energy, wherein the amount of radiation is determined based on the resonant frequency.
摘要翻译： 用于确定辐射量的系统包括配置成接收辐射量的剂量计，该剂量计包括具有谐振频率的电路，使得电路的谐振频率根据剂量计接收的辐射量而改变， 剂量计还被配置为吸收电路的谐振频率处的RF能量; 射频（RF）发射器，被配置为以共振频率将所述RF能量传输到所述剂量计; 以及接收器，被配置为基于所吸收的RF能量来确定所述剂量计的谐振频率，其中所述辐射量基于所述谐振频率来确定。
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5.发明申请METHOD AND STRUCTURE FOR REDUCING CONTACT RESISTANCE BETWEEN SILICIDE CONTACT AND OVERLYING METALLIZATION 有权减少硅化物接触和金属化之间的接触电阻的方法和结构公开(公告)号：US20080211100A1
公开(公告)日：2008-09-04
申请号：US12122984
申请日：2008-05-19
IPC分类号： H01L21/768 , H01L23/48
CPC分类号： H01L23/485 , H01L21/28518 , H01L21/76877 , H01L21/76883 , H01L23/53209 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A semiconductor structure in which the contact resistance in the contact opening is reduced as well as a method of forming the same are provided. This is achieved in the present invention by replacing conventional contact metallurgy, such as tungsten, or a metal silicide, such as Ni silicide or Cu silicide, with a metal germanide-containing contact material. The term “metal germanide-containing” is used in the present application to denote a pure metal germanide (i.e., MGe alloy) or a metal germanide that includes Si (i.e., MSiGe alloy).
摘要翻译： 提供了其中接触开口中的接触电阻降低的半导体结构及其形成方法。 这在本发明中通过用含金属锗化物的接触材料代替常规的接触冶金例如钨或金属硅化物，例如硅化镍或硅化铜，来实现。 在本申请中使用的术语“含金属锗”表示纯金属锗（即MGe合金）或包含Si（即，MSiGe合金）的金属锗化物。
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6.发明授权Method and structure for reducing contact resistance between silicide contact and overlying metallization 有权用于降低硅化物接触和上覆金属化之间的接触电阻的方法和结构公开(公告)号：US07491643B2
公开(公告)日：2009-02-17
申请号：US11440202
申请日：2006-05-24
IPC分类号： H01L21/4763
CPC分类号： H01L23/485 , H01L21/28518 , H01L21/76877 , H01L21/76883 , H01L23/53209 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A semiconductor structure in which the contact resistance in the contact opening is reduced as well as a method of forming the same are provided. This is achieved in the present invention by replacing conventional contact metallurgy, such as tungsten, or a metal silicide, such as Ni silicide or Cu silicide, with a metal germanide-containing contact material. The term “metal germanide-containing” is used in the present application to denote a pure metal germanide (i.e., MGe alloy) or a metal germanide that includes Si (i.e., MSiGe alloy).
摘要翻译： 提供了其中接触开口中的接触电阻降低的半导体结构及其形成方法。 这在本发明中通过用含金属锗化物的接触材料代替常规的接触冶金例如钨或金属硅化物，例如硅化镍或硅化铜，来实现。 在本申请中使用的术语“含金属锗”表示纯金属锗（即MGe合金）或包含Si（即，MSiGe合金）的金属锗化物。
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7.发明授权Method and structure for reducing contact resistance between silicide contact and overlying metallization 有权用于降低硅化物接触和上覆金属化之间的接触电阻的方法和结构公开(公告)号：US07923838B2
公开(公告)日：2011-04-12
申请号：US12122984
申请日：2008-05-19
IPC分类号： H01L21/4763
CPC分类号： H01L23/485 , H01L21/28518 , H01L21/76877 , H01L21/76883 , H01L23/53209 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A semiconductor structure in which the contact resistance in the contact opening is reduced as well as a method of forming the same are provided. This is achieved in the present invention by replacing conventional contact metallurgy, such as tungsten, or a metal silicide, such as Ni silicide or Cu silicide, with a metal germanide-containing contact material. The term “metal germanide-containing” is used in the present application to denote a pure metal germanide (i.e., MGe alloy) or a metal germanide that includes Si (i.e., MSiGe alloy).
摘要翻译： 提供了其中接触开口中的接触电阻降低的半导体结构及其形成方法。 这在本发明中通过用含金属锗化物的接触材料代替常规的接触冶金例如钨或金属硅化物，例如硅化镍或硅化铜，来实现。 在本申请中使用的术语“含金属锗”表示纯金属锗（即MGe合金）或包含Si（即，MSiGe合金）的金属锗化物。
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8.发明申请Method and structure for reducing contact resistance between silicide contact and overlying metallization 有权用于降低硅化物接触和上覆金属化之间的接触电阻的方法和结构公开(公告)号：US20070275548A1
公开(公告)日：2007-11-29
申请号：US11440202
申请日：2006-05-24
IPC分类号： H01L21/44
CPC分类号： H01L23/485 , H01L21/28518 , H01L21/76877 , H01L21/76883 , H01L23/53209 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A semiconductor structure in which the contact resistance in the contact opening is reduced as well as a method of forming the same are provided. This is achieved in the present invention by replacing conventional contact metallurgy, such as tungsten, or a metal silicide, such as Ni silicide or Cu silicide, with a metal germanide-containing contact material. The term “metal germanide-containing” is used in the present application to denote a pure metal germanide (i.e., MGe alloy) or a metal germanide that includes Si (i.e., MSiGe alloy).
摘要翻译： 提供了其中接触开口中的接触电阻降低的半导体结构及其形成方法。 这在本发明中通过用含金属锗化物的接触材料代替常规的接触冶金例如钨或金属硅化物，例如硅化镍或硅化铜，来实现。 在本申请中使用的术语“含金属锗”表示纯金属锗（即MGe合金）或包含Si（即，MSiGe合金）的金属锗化物。
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9.发明授权Computer program products for determining stopping powers of design structures with respect to a traveling particle 有权用于确定相对于旅行颗粒的设计结构的停止力的计算机程序产品公开(公告)号：US07877716B2
公开(公告)日：2011-01-25
申请号：US12111529
申请日：2008-04-29
CPC分类号： G06F17/5009 , G06F2217/16
摘要： A computer program product, comprising a computer readable storage device having a computer readable program code stored therein, said program code including an algorithm adapted to be executed by a computer to implement a method. First, design information of a design structure is provided including a back-end-of-line layer of an integrated circuit which includes N interconnect layers, wherein N is a positive integer. Next, each interconnect layer is divided into multiple pixels. Next, a first path of a traveling particle in a first interconnect layer of the N interconnect layers is determined. Next, M path pixels of the multiple pixels of the first interconnect layer on the first path of the traveling particle are identified, wherein M is a positive integer. Next, a first loss energy lost by the traveling particle due to its completely passing through a first pixel of the M path pixels is determined.
摘要翻译： 一种计算机程序产品，包括具有存储在其中的计算机可读程序代码的计算机可读存储设备，所述程序代码包括适于由计算机执行以实现方法的算法。 首先，提供一种设计结构的设计信息，其包括包括N个互连层的集成电路的后端行层，其中N是正整数。 接下来，每个互连层被分成多个像素。 接下来，确定N个互连层的第一互连层中的行进粒子的第一路径。 接下来，识别行进粒子的第一路径上的第一互连层的多个像素的M个路径像素，其中M是正整数。 接下来，确定由于行进粒子完全通过M路径像素的第一像素而损失的第一损失能量。
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10.发明申请METHOD OF DETERMINING STOPPING POWERS OF DESIGN STRUCTURES WITH RESPECT TO A TRAVELING PARTICLE 有权确定设计结构的停留力与移动颗粒相关的方法公开(公告)号：US20080163137A1
公开(公告)日：2008-07-03
申请号：US11618993
申请日：2007-01-02
IPC分类号： G06F17/50
CPC分类号： G06F17/5009 , G06F2217/16
摘要： A method of determining a stopping power of a design structure with respect to a traveling particle. The method includes (i) providing design information of the design structure comprising a back-end-of-line layer which includes N interconnect layers, N being a positive integer, (ii) dividing each interconnect layer of the N interconnect layers into multiple pixels, and (iii) determining a first path of the traveling particle in a first interconnect layer of the N interconnect layers, (iv) identifying M path pixels of the multiple pixels of the first interconnect layer on the first path of the traveling particle, M being a positive integer, and (v) determining a first loss energy lost by the traveling particle due to its completely passing through a first pixel of the M path pixels.
摘要翻译： 确定设计结构相对于行进颗粒的停止力的方法。 该方法包括（i）提供设计结构的设计信息，该设计结构包括后端行层，其包括N个互连层，N为正整数，（ii）将N个互连层的每个互连层划分成多个像素 ，和（iii）确定所述N个互连层的第一互连层中的所述行进粒子的第一路径，（iv）识别所述行进粒子的所述第一路径上的所述第一互连层的所述多个像素的M个路径像素，M 作为正整数，以及（v）确定由于行进粒子完全通过M路径像素的第一像素而损失的第一损失能量。
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