公开(公告)号：US20240217209A1

公开(公告)日：2024-07-04

申请号：US17914620

申请日：2021-03-26

Applicant: DAI NIPPON PRINTING CO., LTD.

Inventor： Daisuke YASUDA ,  Takanori YAMASHITA ,  Tetsuya OJIRI ,  Hiroyuki KOTERA ,  Tsuyoshi ITO ,  Yoshiko KIYOHARA ,  Kazufumi KODANI

IPC: B32B7/12 ,  B32B15/088 ,  B32B15/20 ,  B32B27/08 ,  B32B27/18 ,  B32B27/32 ,  B32B27/34 ,  B32B27/36 ,  H01G11/80 ,  H01G11/84 ,  H01M50/119 ,  H01M50/121 ,  H01M50/124 ,  H01M50/129

CPC classification number: B32B7/12 ,  B32B15/088 ,  B32B15/20 ,  B32B27/08 ,  B32B27/18 ,  B32B27/32 ,  B32B27/34 ,  B32B27/36 ,  H01G11/80 ,  H01G11/84 ,  H01M50/119 ,  H01M50/121 ,  H01M50/1243 ,  H01M50/129 ,  B32B2250/04 ,  B32B2255/06 ,  B32B2255/10 ,  B32B2255/26 ,  B32B2270/00 ,  B32B2307/31 ,  B32B2307/54 ,  B32B2307/7246 ,  B32B2307/7376 ,  B32B2457/10 ,  B32B2457/16

Abstract: A power storage device is constituted by a laminate including, in the stated order, at least a substrate layer, a barrier layer, and an inside layer. The inside layer is provided with an adhesive layer and a heat-sealing resin layer from the barrier layer side; and if dynamic viscoelasticity is measured by tension with respect to the inside layer, the growth rate at 80° C. is 8.0% or lower.