公开(公告)号：US09595433B2

公开(公告)日：2017-03-14

申请号：US13713606

申请日：2012-12-13

申请人： DAINIPPON SCREEN MFG. CO., LTD.

发明人： Hiroaki Takahashi

IPC分类号： B08B3/04 ,  H01L21/02 ,  H01L21/67

CPC分类号： H01L21/02054 ,  H01L21/6704 ,  H01L21/67051

摘要： A substrate processing method includes a rinsing step of supplying water of a first temperature to a surface of a silicon substrate to apply a rinsing process using the water to the silicon substrate surface, a second temperature water supplying (coating) step of supplying water of a second temperature lower than the first temperature to the silicon substrate surface after the rinsing step, and a drying step of rotating the silicon substrate after the second temperature water supplying step to spin off the water on the silicon substrate surface to a periphery of the silicon substrate and thereby dry the silicon substrate.

摘要翻译： 基板处理方法包括将第一温度的水供给到硅基板的表面的漂洗工序，将使用该水的冲洗处理应用于硅基板表面，第二温度供水（涂布）工序， 在第二温度供水步骤之后使硅衬底旋转以将硅衬底表面上的水分离到硅衬底的周围的干燥步骤;以及干燥步骤， 从而干燥硅衬底。